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The Investigation of Photovoltaic and Electrical Properties of Bi Doped CTS/Si Hetero-Junction Structure for the Solar Cell Application

Year 2022, Volume: 43 Issue: 1, 137 - 145, 30.03.2022

Serap Yiğit Gezgin Amina Houımı Bedrettin Mercimek Hamdi Şükür Kılıç

https://doi.org/10.17776/csj.990817

Abstract

In this study, we have produced Cu-Sn-S (CTS) and Bi doped CTS powder composite structures by mixing CuS and SnS2 powders and adding %3 Bi into CuS-SnS2 (1:1) powder mixture. These raw powders were mixed and milled by a ball milling device and then CTS and Bi doped CTS target pellets have been produced by cold pressing using a mold prepared in special dimensions. The morphology and crystal structure of target pellets have analysed by SEM and XRD techniques. The target pellets contain different crystalline phases such as: Cu2SnS3, Cu2Sn3S7, Cu4Sn7S16 and SnS. It has been experienced that Bi doped CTS target pellet has better morphology compared to CTS target pellet. Using PLD technique, the target pellets have been ablated by laser beam to deposited thin film on soda lime glass substrates. According to AFM analysis, the particle size that forms Bi doped CTS thin film is larger than that of CTS thin film. Bi doped CTS thin film has poor crystal structure, while the pure CTS thin film were amorphous. The band gap of Bi doped CTS thin film is slightly lower than that of CTS thin film. While the produced Ag/CTS/Si/Al hetero-junction has not shown diode feature, Ag/Bi dop CTS/Si/Al hetero-junction has exhibited photovoltaic behaviour. The ideality factor, the barrier height, serial resistivity of Ag/Bi dop CTS/Si/Al hetero-junction have been calculated by the conventional J-V, Cheung-Cheung and Norde methods in the darkness and under the illumination (AM 1.5 solar radiation in 80 mW/cm2). The photovoltaic parameters of the hetero-junction have been determined and interpreted in detail in this article.

Keywords

Target pellet Doped Bi doped CTS Thin film Ball milling PLD.

Supporting Institution

Selçuk Üniversitesi Bilimsel Araştırma Projeleri Koordinatörlüğü

Project Number

18401178 ve 20401018

Thanks

Authors kindly would like to thank, - Selçuk University, High Technology Research and Application Center and Selçuk University, Laser Induced Proton Therapy Application and Research Center for supplying with Infrastructure and - Selçuk University, Scientific Research Projects Coordination (BAP) Unit for grands via projects with references of 18401178 and 20401018

References

  • [1] Berg D.M., et al., Raman analysis of monoclinic Cu2SnS3 thin films. Applied Physics Letters, 100(19) (20212) 192103.
  • [2] Bourgès C., et al., Low thermal conductivity in ternary Cu4Sn7S16 compound. Acta Materialia, 97 (2015) 180-190.
  • [3] Fu L., et al., Graphene-encapsulated copper tin sulfide submicron spheres as high-capacity binder-free anode for lithium-ion batteries. (2017).
  • [4] Alias M., et al., Synthesis Cu2SnS3 and Cu3SnS4 nanopowder and studying the composition, structural and morphological properties. Journal of Non-Oxide Glasses, 8(4) (2016) 93-97.
  • [5] Lokhande A., et al., Development of Cu2SnS3 (CTS) thin film solar cells by physical techniques: A status review. Solar Energy Materials and Solar Cells, 153 (2016) 84-107.
  • [6] Akaki Y., Matsuo H., Yoshino K., Structural, electrical and optical properties of Bi‐doped CuInS2 thin films grown by vacuum evaporation method. physica status solidi c, (8) (2006) 2597-2600.
  • [7] Chantana J., et al., Bismuth‐doped Cu (In, Ga) Se2 absorber prepared by multi‐layer precursor method and its solar cell. physica status solidi (c), 12(6) (2015) 680-683.
  • [8] Rawat K., Shishodia P., Enhancement of photosensitivity in bismuth doped Cu2ZnSnS4 thin films. Physica status solidi (RRL)–Rapid Research Letters, 10(12) (2016) 890-894.
  • [9] Chen F.-S., et al., Cu (In, Ga) Se2 thin films codoped with sodium and bismuth ions for the use in the solar cells. Journal of Nanomaterials, 2015. 2015.
  • [10] Chalapathi U., Poornaprakash B., Park S. H., Antimony induced crystal growth for large-grained Cu2SnS3 thin films for photovoltaics. Journal of Power Sources, 426 (2019) 84-92.
  • [11] Gezgin S.Y., Kiliç H. Ş., Determination of electrical parameters of ITO/CZTS/CdS/Ag and ITO/CdS/CZTS/Ag heterojunction diodes in dark and illumination conditions. Optical and Quantum Electronics, 51(11) (2019) 360.
  • [12] Gezgin S.Y., Kılıç H. Ş., The electrical characteristics of ITO/CZTS/ZnO/Al and ITO/ZnO/CZTS/Al heterojunction diodes. Optik, 182 (2019) 356-371.
  • [13] Ettlinger R.B., et al. Pulsed laser deposition of Cu-Sn-S for thin film solar cells. in World Conference on Photovoltaic Energy Conversion 6 (2014).
  • [14] Zhou W., et al., Sustainable thermoelectric materials fabricated by using Cu2Sn1-x Zn x S3 nanoparticles as building blocks. Applied Physics Letters, 111(26) (2017) 263105.
  • [15] Chen X., et al., SnS/N-Doped carbon composites with enhanced Li+ storage and lifetime by controlled hierarchical submicron-and nano-structuring. CrystEngComm, 22(9) (2020) 1547-1554.
  • [16] Hossain E.S., et al., Fabrication of Cu2SnS3 thin film solar cells by sulphurization of sequentially sputtered Sn/CuSn metallic stacked precursors. Solar Energy, 177 (2019) 262-273.
  • [17] Wang C.-J., et al., Fabrication and sulfurization of Cu2SnS3 thin films with tuning the concentration of Cu-Sn-S precursor ink. Applied Surface Science, 388 (2016) 71-76.
  • [18] He T., et al., The role of excess Sn in Cu 4 Sn 7 S 16 for modification of the band structure and a reduction in lattice thermal conductivity. Journal of Materials Chemistry C, 5(17) (2017) 4206-4213.
  • [19] Cui J., et al., Improved thermoelectric performance of solid solution Cu 4 Sn 7.5 S 16 through isoelectronic substitution of Se for S. Scientific reports, 8(1) (2018) 1-9.
  • [20]Weber A., Mainz R., Schock H., On the Sn loss from thin films of the material system Cu–Zn–Sn–S in high vacuum. Journal of Applied Physics, 107(1) (2010) 013516.
  • [21] Jackson A.J., Walsh A., Ab initio thermodynamic model of Cu 2 ZnSnS 4. Journal of Materials Chemistry A, 2(21) (2014) 7829-7836.
  • [22] Berg D.M., et al., Thin film solar cells based on the ternary compound Cu2SnS3. Thin Solid Films, 520(19) (2012) 6291-6294.
  • [23]Andrade Jr, M.A., Mascaro L. H., Bismuth doping on CuGaS2 thin films: structural and optical properties. MRS COMMUNICATIONS, 8(2) (2018) 504.
  • [24]Liu N., et al., Synthesis and characterization of (Cu 1− x Ag x) 2 ZnSnS 4 nanoparticles with phase transition and bandgap tuning. Journal of Materials Science: Materials in Electronics, (2020) p. 1-9.
  • [25]Zhao Y., et al., Effect of Ag doping on the performance of Cu2SnS3 thin-film solar cells. Solar Energy, 201 (2020) 190-194.
  • [26]Alijani M., Ilkhechi N. N., Effect of Ni Doping on the Structural and Optical Properties of TiO 2 Nanoparticles at Various Concentration and Temperature. Silicon, 10(6) (2018) 2569-2575.
  • [27] Ammar I., Gassoumi A., Turki-Kamoun N., The Effect of TSC and Nickel Doping on SnS Thin Films. Silicon, 2020: p. 1-6.
  • [28]Song N., et al., Epitaxial Cu2ZnSnS4 thin film on Si (111) 4 substrate. Applied Physics Letters, 106(25) (2015) 252102.
  • [29]Shin B., et al., Epitaxial growth of kesterite Cu2ZnSnS4 on a Si (001) substrate by thermal co-evaporation. Thin Solid Films, 556 (2014). 9-12.
  • [30]Gezgin S.Y., Houimi A., Kılıç H. Ş., Production and photovoltaic characterisation of n-Si/p-CZTS heterojunction solar cells based on a CZTS ultrathin active layers. Optik, 199 (2019) 163370.
  • [31] Jia Z., et al., The photovoltaic properties of novel narrow band gap Cu 2 SnS 3 films prepared by a spray pyrolysis method. RSC Advances, 5(37) (2015) 28885-28891.
  • [32]Welatta F., et al. Fabrication and characterization of copper-tin-sulfide thin film. in AIP Conference Proceedings. (2018) AIP Publishing LLC.
  • [33]Uslu H., et al., The interface states and series resistance effects on the forward and reverse bias I–V, C–V and G/ω-V characteristics of Al–TiW–Pd2Si/n-Si Schottky barrier diodes. Journal of alloys and compounds, 503(1) (2010) 96-102.
  • [34]Elhouichet H., Othmen W. B. H., Dabboussi S., Effect of Sb, Tb 3+ Doping on Optical and Electrical Performances of SnO 2 and Si Based Schottky Diodes. Silicon, 12(3) (2020) 715-722.
  • [35]Tataroğlu A., Altındal Ş., Azizian‑Kalandaragh y., Electrical and photoresponse properties of CoSO.
  • [36]Lambada D.R., et al., Investigation of Illumination Effects on the Electrical Properties of Au/GO/p-InP Heterojunction with a Graphene Oxide Interlayer. Nanomanufacturing and Metrology, (2020) 1-13.
  • [37] Özerli H., et al., Electrical and photovoltaic properties of Ag/p-Si structure with GO doped NiO interlayer in dark and under light illumination. Journal of Alloys and Compounds, 718 (2017). 75-84.
  • [38]Soliman H., et al., Electronic and photovoltaic properties of Au/pyronine G (Y)/p-GaAs/Au: Zn heterojunction. Journal of alloys and compounds, 530 (2012) 157-163.
  • [39]Karataş Ş., Yakuphanoğlu F., Effects of illumination on electrical parameters of Ag/n-CdO/p-Si diode. Materials Chemistry and Physics, 138(1) (2013) 72-77.
  • [40]Bedia F., et al., Electrical characterization of n-ZnO/p-Si heterojunction prepared by spray pyrolysis technique. Physics Procedia, 55 (2014) 61-67.
  • [41] Norde H., A modified forward I‐V plot for Schottky diodes with high series resistance. Journal of Applied Physics, 50(7) (1979) 5052-5053.
  • [42]Shi Z., Jayatissa A. H., One-pot hydrothermal synthesis and fabrication of kesterite Cu2ZnSn (S, Se) 4 thin films. Progress in Natural Science: Materials International, 27(5) (2017) 550-555.
  • [43]Zedan I., El-Menyawy E., Mansour A., Physical Characterizations of 3-(4-Methyl Piperazinylimino Methyl) Rifampicin Films for Photodiode Applications. Silicon, 11(3) (2019) 1693-1699.
  • [44]Gezgin S.Y., Kiliç H. Ş., Determination of electrical parameters of ITO/CZTS/CdS/Ag and ITO/CdS/CZTS/Ag heterojunction diodes in dark and illumination conditions. Optical and Quantum Electronics, 51(11) (2019) 1-22.
  • [45]Yao Z., et al., High‐Performance and Stable Dopant‐Free Silicon Solar Cells with Magnesium Acetylacetonate Electron‐Selective Contacts. physica status solidi (RRL)–Rapid Research Letters, 14(6) (2020) 2000103.
  • [46]Kang J., et al., Electron‐Selective Lithium Contacts for Crystalline Silicon Solar Cells. Advanced Materials Interfaces, (2021) 2100015.
  • [47]Ali M., et al., Optimization Of Monoclinic Cu2sns3 (Cts) Thin Film Solar Cell Performances Through Numerical Analysis. Chalcogenide Letters, 17(2) (2020) 85-98.

Year 2022, Volume: 43 Issue: 1, 137 - 145, 30.03.2022

Serap Yiğit Gezgin Amina Houımı Bedrettin Mercimek Hamdi Şükür Kılıç

https://doi.org/10.17776/csj.990817

Abstract

Project Number

18401178 ve 20401018

References

  • [1] Berg D.M., et al., Raman analysis of monoclinic Cu2SnS3 thin films. Applied Physics Letters, 100(19) (20212) 192103.
  • [2] Bourgès C., et al., Low thermal conductivity in ternary Cu4Sn7S16 compound. Acta Materialia, 97 (2015) 180-190.
  • [3] Fu L., et al., Graphene-encapsulated copper tin sulfide submicron spheres as high-capacity binder-free anode for lithium-ion batteries. (2017).
  • [4] Alias M., et al., Synthesis Cu2SnS3 and Cu3SnS4 nanopowder and studying the composition, structural and morphological properties. Journal of Non-Oxide Glasses, 8(4) (2016) 93-97.
  • [5] Lokhande A., et al., Development of Cu2SnS3 (CTS) thin film solar cells by physical techniques: A status review. Solar Energy Materials and Solar Cells, 153 (2016) 84-107.
  • [6] Akaki Y., Matsuo H., Yoshino K., Structural, electrical and optical properties of Bi‐doped CuInS2 thin films grown by vacuum evaporation method. physica status solidi c, (8) (2006) 2597-2600.
  • [7] Chantana J., et al., Bismuth‐doped Cu (In, Ga) Se2 absorber prepared by multi‐layer precursor method and its solar cell. physica status solidi (c), 12(6) (2015) 680-683.
  • [8] Rawat K., Shishodia P., Enhancement of photosensitivity in bismuth doped Cu2ZnSnS4 thin films. Physica status solidi (RRL)–Rapid Research Letters, 10(12) (2016) 890-894.
  • [9] Chen F.-S., et al., Cu (In, Ga) Se2 thin films codoped with sodium and bismuth ions for the use in the solar cells. Journal of Nanomaterials, 2015. 2015.
  • [10] Chalapathi U., Poornaprakash B., Park S. H., Antimony induced crystal growth for large-grained Cu2SnS3 thin films for photovoltaics. Journal of Power Sources, 426 (2019) 84-92.
  • [11] Gezgin S.Y., Kiliç H. Ş., Determination of electrical parameters of ITO/CZTS/CdS/Ag and ITO/CdS/CZTS/Ag heterojunction diodes in dark and illumination conditions. Optical and Quantum Electronics, 51(11) (2019) 360.
  • [12] Gezgin S.Y., Kılıç H. Ş., The electrical characteristics of ITO/CZTS/ZnO/Al and ITO/ZnO/CZTS/Al heterojunction diodes. Optik, 182 (2019) 356-371.
  • [13] Ettlinger R.B., et al. Pulsed laser deposition of Cu-Sn-S for thin film solar cells. in World Conference on Photovoltaic Energy Conversion 6 (2014).
  • [14] Zhou W., et al., Sustainable thermoelectric materials fabricated by using Cu2Sn1-x Zn x S3 nanoparticles as building blocks. Applied Physics Letters, 111(26) (2017) 263105.
  • [15] Chen X., et al., SnS/N-Doped carbon composites with enhanced Li+ storage and lifetime by controlled hierarchical submicron-and nano-structuring. CrystEngComm, 22(9) (2020) 1547-1554.
  • [16] Hossain E.S., et al., Fabrication of Cu2SnS3 thin film solar cells by sulphurization of sequentially sputtered Sn/CuSn metallic stacked precursors. Solar Energy, 177 (2019) 262-273.
  • [17] Wang C.-J., et al., Fabrication and sulfurization of Cu2SnS3 thin films with tuning the concentration of Cu-Sn-S precursor ink. Applied Surface Science, 388 (2016) 71-76.
  • [18] He T., et al., The role of excess Sn in Cu 4 Sn 7 S 16 for modification of the band structure and a reduction in lattice thermal conductivity. Journal of Materials Chemistry C, 5(17) (2017) 4206-4213.
  • [19] Cui J., et al., Improved thermoelectric performance of solid solution Cu 4 Sn 7.5 S 16 through isoelectronic substitution of Se for S. Scientific reports, 8(1) (2018) 1-9.
  • [20]Weber A., Mainz R., Schock H., On the Sn loss from thin films of the material system Cu–Zn–Sn–S in high vacuum. Journal of Applied Physics, 107(1) (2010) 013516.
  • [21] Jackson A.J., Walsh A., Ab initio thermodynamic model of Cu 2 ZnSnS 4. Journal of Materials Chemistry A, 2(21) (2014) 7829-7836.
  • [22] Berg D.M., et al., Thin film solar cells based on the ternary compound Cu2SnS3. Thin Solid Films, 520(19) (2012) 6291-6294.
  • [23]Andrade Jr, M.A., Mascaro L. H., Bismuth doping on CuGaS2 thin films: structural and optical properties. MRS COMMUNICATIONS, 8(2) (2018) 504.
  • [24]Liu N., et al., Synthesis and characterization of (Cu 1− x Ag x) 2 ZnSnS 4 nanoparticles with phase transition and bandgap tuning. Journal of Materials Science: Materials in Electronics, (2020) p. 1-9.
  • [25]Zhao Y., et al., Effect of Ag doping on the performance of Cu2SnS3 thin-film solar cells. Solar Energy, 201 (2020) 190-194.
  • [26]Alijani M., Ilkhechi N. N., Effect of Ni Doping on the Structural and Optical Properties of TiO 2 Nanoparticles at Various Concentration and Temperature. Silicon, 10(6) (2018) 2569-2575.
  • [27] Ammar I., Gassoumi A., Turki-Kamoun N., The Effect of TSC and Nickel Doping on SnS Thin Films. Silicon, 2020: p. 1-6.
  • [28]Song N., et al., Epitaxial Cu2ZnSnS4 thin film on Si (111) 4 substrate. Applied Physics Letters, 106(25) (2015) 252102.
  • [29]Shin B., et al., Epitaxial growth of kesterite Cu2ZnSnS4 on a Si (001) substrate by thermal co-evaporation. Thin Solid Films, 556 (2014). 9-12.
  • [30]Gezgin S.Y., Houimi A., Kılıç H. Ş., Production and photovoltaic characterisation of n-Si/p-CZTS heterojunction solar cells based on a CZTS ultrathin active layers. Optik, 199 (2019) 163370.
  • [31] Jia Z., et al., The photovoltaic properties of novel narrow band gap Cu 2 SnS 3 films prepared by a spray pyrolysis method. RSC Advances, 5(37) (2015) 28885-28891.
  • [32]Welatta F., et al. Fabrication and characterization of copper-tin-sulfide thin film. in AIP Conference Proceedings. (2018) AIP Publishing LLC.
  • [33]Uslu H., et al., The interface states and series resistance effects on the forward and reverse bias I–V, C–V and G/ω-V characteristics of Al–TiW–Pd2Si/n-Si Schottky barrier diodes. Journal of alloys and compounds, 503(1) (2010) 96-102.
  • [34]Elhouichet H., Othmen W. B. H., Dabboussi S., Effect of Sb, Tb 3+ Doping on Optical and Electrical Performances of SnO 2 and Si Based Schottky Diodes. Silicon, 12(3) (2020) 715-722.
  • [35]Tataroğlu A., Altındal Ş., Azizian‑Kalandaragh y., Electrical and photoresponse properties of CoSO.
  • [36]Lambada D.R., et al., Investigation of Illumination Effects on the Electrical Properties of Au/GO/p-InP Heterojunction with a Graphene Oxide Interlayer. Nanomanufacturing and Metrology, (2020) 1-13.
  • [37] Özerli H., et al., Electrical and photovoltaic properties of Ag/p-Si structure with GO doped NiO interlayer in dark and under light illumination. Journal of Alloys and Compounds, 718 (2017). 75-84.
  • [38]Soliman H., et al., Electronic and photovoltaic properties of Au/pyronine G (Y)/p-GaAs/Au: Zn heterojunction. Journal of alloys and compounds, 530 (2012) 157-163.
  • [39]Karataş Ş., Yakuphanoğlu F., Effects of illumination on electrical parameters of Ag/n-CdO/p-Si diode. Materials Chemistry and Physics, 138(1) (2013) 72-77.
  • [40]Bedia F., et al., Electrical characterization of n-ZnO/p-Si heterojunction prepared by spray pyrolysis technique. Physics Procedia, 55 (2014) 61-67.
  • [41] Norde H., A modified forward I‐V plot for Schottky diodes with high series resistance. Journal of Applied Physics, 50(7) (1979) 5052-5053.
  • [42]Shi Z., Jayatissa A. H., One-pot hydrothermal synthesis and fabrication of kesterite Cu2ZnSn (S, Se) 4 thin films. Progress in Natural Science: Materials International, 27(5) (2017) 550-555.
  • [43]Zedan I., El-Menyawy E., Mansour A., Physical Characterizations of 3-(4-Methyl Piperazinylimino Methyl) Rifampicin Films for Photodiode Applications. Silicon, 11(3) (2019) 1693-1699.
  • [44]Gezgin S.Y., Kiliç H. Ş., Determination of electrical parameters of ITO/CZTS/CdS/Ag and ITO/CdS/CZTS/Ag heterojunction diodes in dark and illumination conditions. Optical and Quantum Electronics, 51(11) (2019) 1-22.
  • [45]Yao Z., et al., High‐Performance and Stable Dopant‐Free Silicon Solar Cells with Magnesium Acetylacetonate Electron‐Selective Contacts. physica status solidi (RRL)–Rapid Research Letters, 14(6) (2020) 2000103.
  • [46]Kang J., et al., Electron‐Selective Lithium Contacts for Crystalline Silicon Solar Cells. Advanced Materials Interfaces, (2021) 2100015.
  • [47]Ali M., et al., Optimization Of Monoclinic Cu2sns3 (Cts) Thin Film Solar Cell Performances Through Numerical Analysis. Chalcogenide Letters, 17(2) (2020) 85-98.
There are 47 citations in total.

Details

Primary Language English
Subjects Classical Physics (Other)
Journal Section Natural Sciences
Authors

Serap Yiğit Gezgin 0000-0003-3046-6138

Amina Houımı 0000-0002-2621-2250

Bedrettin Mercimek

Hamdi Şükür Kılıç 0000-0002-7546-4243

Project Number 18401178 ve 20401018
Publication Date March 30, 2022
Submission Date September 5, 2021
Acceptance Date March 5, 2022
Published in Issue Year 2022Volume: 43 Issue: 1

Cite

APA Yiğit Gezgin, S., Houımı, A., Mercimek, B., Kılıç, H. Ş. (2022). The Investigation of Photovoltaic and Electrical Properties of Bi Doped CTS/Si Hetero-Junction Structure for the Solar Cell Application. Cumhuriyet Science Journal, 43(1), 137-145. https://doi.org/10.17776/csj.990817
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