Abstract
References
- [1] Portsel L. M., Lodygin A. N., Astrov, Y. A., Townsend-like discharge: the suppression of instabilities by a semiconductor electrode, J. of Phys. D: Appl. Phys., 42 (23) (2009): 235208.
- [2] Weltmann K. D., Kolb J. F., Holub M., Uhrlandt D., Šimek M., Ostrikov K., Becker K. (2019). The future for plasma science and technology, Plas. Proc. and Poly., 16(1), 1800118.
- [3] Grill A., Cold plasma in materials fabrication, Vol. 151. IEEE Press, New York, 1994.
- [4] Lieberman M. A., Lichtenberg A. J., Principles of plasma discharges and materials processing, MRS Bullet., 30(12) (1994) 899-901.
- [5] Lodygin A. N., Portsel L. M., Astrov, Y. A., DC Townsend Discharge in Nitrogen: Temperature‐Dependent Phenomena, Contr. to Plasma Phys., 52(8) (2012) 682-691.
- [6] Salamov B. G., Kurt H. Y., Current instability in a planar gas discharge system with a large-diameter semiconductor cathode, J. of Phys. D: Appl. Phys., 38(5) (2005) 682.
- [7] Gurevich E. L., Kittel S., Hergenröder R., Astrov Y. A., Portsel L. M., Lodygin A. N., Ankudinov A. V., Modification of GaAs surface by low-current Townsend discharge, J. of Phys. D: Appl. Phys., 43(27) (2010) 275302.
- [8] Raizer Y. P., John E A., Gas discharge physics, Vol. 2. Berlin: Springer, 1997.
- [9] Chen Z. G., Cheng L., Lu G. Q. M., Zou J., Sulfur-doped gallium phosphide nanowires and their optoelectronic properties, Nanotechnology, 21(37) (2010) 375701.
- [10] Liu F., Song Y. J., Xing Q. R., Hu M. L., Li Y. F., Wang C. L., ... Wang C. Y., Broadband terahertz pulses generated by a compact femtosecond photonic crystal fiber amplifier, IEEE Phot. Tech. Let., 22(11) (2010) 814-816.
- [11] McIntosh D., Zhou Q., Lara F. J., Landers J., Campbell J. C., Flip-chip bonded GaP photodiodes for detection of 400-to 480-nm fluorescence, IEEE Phot. Tech. Let., 23(13) (2011) 878-880.
- [12] Zhuo L., Hai-Yun L., Xin-Xin W., Bo L. V., Zhi-Cheng G., Li-Ming W., Determination of ionization coefficient of atmospheric helium in dielectric barrier discharge, Chinese Phys. Let., 25(6) (2008) 2136.
- [13] Luo H., Liang Z., Lv B., Wang X., Guan Z., Wang L., Observation of the transition from a Townsend discharge to a glow discharge in helium at atmospheric pressure, App. Phys. Let., 91(22) (2007) 221504.
- [14] Kurt H. Y., Exploration of the Townsend regime by discharge light emission in a gas discharge device, Chinese Phys. B, 23(1) (2013) 015201.
- [15] Kurt H. H., Tanrıverdi E., The Features of GaAs and GaP Semiconductor Cathodes in an Infrared Converter System., J. of Elect. Mater., 46(7) (2017) 4024-4033.
- [16] Kurt H. H., Çetin S., Tanriverdi E., Yiğit D., Investigation of infrared GaAs photodetector instabilities, Gazi Ün. Fen Bil. Der. Part C: Tas. ve Tek., 2(3) (2014) 281-288.
Abstract
In the study, it was experimentally investigated the Microelectronic Gas Discharge System (MGDS) with Gallium Phosphate (GaP) cathode. The system was operated in the dark and under different Infrared (IR) illumination intensities. The Current-Voltage Characteristic (CVC) was obtained for different IR illuminations under high-pressure conditions. IR illumination produced different electrical conductivities at high pressures. This reality shows that the system can operate more conveniently at high pressures for optoelectronic applications. It was determined that the system showed Negative Differential Resistance (NDR) and hysteresis behaviors when appropriate experimental parameters were set. It was seen that the pressure and distance between the electrodes has a significant factor in determining the hysteresis value. AVK, Discharge Light Emission (DLE), and hysteresis behaviors were investigated under different illumination intensities using a semiconductor plasma system. It has been observed that IR illumination creates different electrical conductivities at high pressures. This showed that the system can operate more conveniently at high pressures for optoelectronic applications. It has been observed that CVCs are more stable as the distance between the electrodes decreases. In this study, the IR sensitivity of GaP was tested for the first time. According to the experimental results, it was seen that GaP can be optically excited with IR light when the appropriate distance between the electrodes and the appropriate gas pressure was adjusted.
Keywords
: Infrared GaP photodetector Microelectronic gas discharge system Current-voltage characteristic
References
- [1] Portsel L. M., Lodygin A. N., Astrov, Y. A., Townsend-like discharge: the suppression of instabilities by a semiconductor electrode, J. of Phys. D: Appl. Phys., 42 (23) (2009): 235208.
- [2] Weltmann K. D., Kolb J. F., Holub M., Uhrlandt D., Šimek M., Ostrikov K., Becker K. (2019). The future for plasma science and technology, Plas. Proc. and Poly., 16(1), 1800118.
- [3] Grill A., Cold plasma in materials fabrication, Vol. 151. IEEE Press, New York, 1994.
- [4] Lieberman M. A., Lichtenberg A. J., Principles of plasma discharges and materials processing, MRS Bullet., 30(12) (1994) 899-901.
- [5] Lodygin A. N., Portsel L. M., Astrov, Y. A., DC Townsend Discharge in Nitrogen: Temperature‐Dependent Phenomena, Contr. to Plasma Phys., 52(8) (2012) 682-691.
- [6] Salamov B. G., Kurt H. Y., Current instability in a planar gas discharge system with a large-diameter semiconductor cathode, J. of Phys. D: Appl. Phys., 38(5) (2005) 682.
- [7] Gurevich E. L., Kittel S., Hergenröder R., Astrov Y. A., Portsel L. M., Lodygin A. N., Ankudinov A. V., Modification of GaAs surface by low-current Townsend discharge, J. of Phys. D: Appl. Phys., 43(27) (2010) 275302.
- [8] Raizer Y. P., John E A., Gas discharge physics, Vol. 2. Berlin: Springer, 1997.
- [9] Chen Z. G., Cheng L., Lu G. Q. M., Zou J., Sulfur-doped gallium phosphide nanowires and their optoelectronic properties, Nanotechnology, 21(37) (2010) 375701.
- [10] Liu F., Song Y. J., Xing Q. R., Hu M. L., Li Y. F., Wang C. L., ... Wang C. Y., Broadband terahertz pulses generated by a compact femtosecond photonic crystal fiber amplifier, IEEE Phot. Tech. Let., 22(11) (2010) 814-816.
- [11] McIntosh D., Zhou Q., Lara F. J., Landers J., Campbell J. C., Flip-chip bonded GaP photodiodes for detection of 400-to 480-nm fluorescence, IEEE Phot. Tech. Let., 23(13) (2011) 878-880.
- [12] Zhuo L., Hai-Yun L., Xin-Xin W., Bo L. V., Zhi-Cheng G., Li-Ming W., Determination of ionization coefficient of atmospheric helium in dielectric barrier discharge, Chinese Phys. Let., 25(6) (2008) 2136.
- [13] Luo H., Liang Z., Lv B., Wang X., Guan Z., Wang L., Observation of the transition from a Townsend discharge to a glow discharge in helium at atmospheric pressure, App. Phys. Let., 91(22) (2007) 221504.
- [14] Kurt H. Y., Exploration of the Townsend regime by discharge light emission in a gas discharge device, Chinese Phys. B, 23(1) (2013) 015201.
- [15] Kurt H. H., Tanrıverdi E., The Features of GaAs and GaP Semiconductor Cathodes in an Infrared Converter System., J. of Elect. Mater., 46(7) (2017) 4024-4033.
- [16] Kurt H. H., Çetin S., Tanriverdi E., Yiğit D., Investigation of infrared GaAs photodetector instabilities, Gazi Ün. Fen Bil. Der. Part C: Tas. ve Tek., 2(3) (2014) 281-288.
Details
| Primary Language | English |
|---|---|
| Subjects | Classical Physics (Other) |
| Journal Section | Natural Sciences |
| Authors | |
| Publication Date | December 29, 2021 |
| Submission Date | July 26, 2021 |
| Acceptance Date | November 7, 2021 |
| Published in Issue | Year 2021Volume: 42 Issue: 4 |