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Electrical Analysis of Au/PTB7:PCBM/n-Si Schottky Barrier Diode with Temperature and Illumination Dependence

Year 2026, Volume: 47 Issue: 1, 162 - 170, 27.02.2026

Hüseyin Muzaffer Şağban , Özge Tüzün Özmen

https://doi.org/10.17776/csj.1713520
https://izlik.org/JA48ZY74TM

Abstract

In today's rapidly advancing technological landscape, the use of semiconductors and the associated research on the development of advanced electronic and optoelectronic devices have gained considerable importance. Among these, organic-based semiconductors have emerged as a focal point in recent years due to their promising characteristics. Organic polymers, in particular, are preferred in the field of semiconductor technology owing to several advantages such as low-temperature processing, cost-effective fabrication methods, and the potential for high-efficiency electronic device performance. In this study, metal-polymer-semiconductor (MPS) type Schottky Barrier Diodes (SBDs) were fabricated using the next-generation organic polymer PTB7 and the additive material PCBM in two different weight ratios: 1:1 and 2:1. The electrical properties of the fabricated diodes were systematically investigated by analyzing the ideality factor (n), barrier height (ΦB), and series resistance (Rs) under different environmental and operational conditions. These analyses were carried out under dark conditions, under illumination with an irradiance of 1000 W/m², and across a temperature range of 200 K to 325 K in 25 K intervals. The results aim to contribute to a deeper understanding of the performance and potential applications of PTB7:PCBM-based Schottky diodes in future organic electronics

Keywords

Electrical characteristics Schottky barrier diode Temperature and illumination effect

Supporting Institution

This work has been funded by Scientific Research Project Fund of Düzce University

Project Number

2017.05.02.525

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There are 18 citations in total.

Details

Primary Language English
Subjects Atomic and Molecular Physics
Journal Section Research Article
Authors

Hüseyin Muzaffer Şağban 0000-0001-8820-5622

Özge Tüzün Özmen 0000-0002-5204-3737

Project Number 2017.05.02.525
Submission Date June 3, 2025
Acceptance Date January 9, 2026
Publication Date February 27, 2026
DOI https://doi.org/10.17776/csj.1713520
IZ https://izlik.org/JA48ZY74TM
Published in Issue Year 2026 Volume: 47 Issue: 1

Cite

APA Şağban, H. M., & Tüzün Özmen, Ö. (2026). Electrical Analysis of Au/PTB7:PCBM/n-Si Schottky Barrier Diode with Temperature and Illumination Dependence. Cumhuriyet Science Journal, 47(1), 162-170. https://doi.org/10.17776/csj.1713520

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