Electrical Analysis of Au/PTB7:PCBM/n-Si Schottky Barrier Diode with Temperature and Illumination Dependence

Hüseyin Muzaffer Şağban; Özge Tüzün Özmen

doi:10.17776/csj.1713520

Electrical Analysis of Au/PTB7:PCBM/n-Si Schottky Barrier Diode with Temperature and Illumination Dependence

Abstract

In today's rapidly advancing technological landscape, the use of semiconductors and the associated research on the development of advanced electronic and optoelectronic devices have gained considerable importance. Among these, organic-based semiconductors have emerged as a focal point in recent years due to their promising characteristics. Organic polymers, in particular, are preferred in the field of semiconductor technology owing to several advantages such as low-temperature processing, cost-effective fabrication methods, and the potential for high-efficiency electronic device performance. In this study, metal-polymer-semiconductor (MPS) type Schottky Barrier Diodes (SBDs) were fabricated using the next-generation organic polymer PTB7 and the additive material PCBM in two different weight ratios: 1:1 and 2:1. The electrical properties of the fabricated diodes were systematically investigated by analyzing the ideality factor (n), barrier height (Φ_B), and series resistance (R_s) under different environmental and operational conditions. These analyses were carried out under dark conditions, under illumination with an irradiance of 1000 W/m², and across a temperature range of 200 K to 325 K in 25 K intervals. The results aim to contribute to a deeper understanding of the performance and potential applications of PTB7:PCBM-based Schottky diodes in future organic electronics

Keywords

Supporting Institution

This work has been funded by Scientific Research Project Fund of Düzce University

Project Number

2017.05.02.525

References

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Details

Primary Language

English

Subjects

Atomic and Molecular Physics

Journal Section

Research Article

Authors

Hüseyin Muzaffer Şağban ^*
0000-0001-8820-5622
Türkiye

Özge Tüzün Özmen
0000-0002-5204-3737
Türkiye

Publication Date

February 27, 2026

Submission Date

June 3, 2025

Acceptance Date

January 9, 2026

Published in Issue

Year 2026 Volume: 47 Number: 1

DOI

https://doi.org/10.17776/csj.1713520

IZ

https://izlik.org/JA48ZY74TM

Cite

RIS / Bibtex

APA

Şağban, H. M., & Tüzün Özmen, Ö. (2026). Electrical Analysis of Au/PTB7:PCBM/n-Si Schottky Barrier Diode with Temperature and Illumination Dependence. Cumhuriyet Science Journal, 47(1), 162-170. https://doi.org/10.17776/csj.1713520