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Year 2025, Volume: 46 Issue: 2, 390 - 395, 30.06.2025

Gamze Yolcu , İlkay Demir

https://doi.org/10.17776/csj.1672625

Abstract

Project Number

AY_TE-2023-005 and M-2023-857

References

  • [1] Ladugin M.A.E., Marmalyuk A.A.E., Effect of (Al)GaAs/AlGaAs quantum confinement region parameters on the threshold current density of laser diodes, Quantum Electron., 49 (6) (2019) 529.
  • [2] Saeed S., Usman M., Ali S., Ali H., Mustafa L., High performance near-infrared III-Arsenide laser diodes with p-AlGaAs barriers, Opt. Mater., 139 (2023) 113809.
  • [3] Kim K.C., Kim T.G., Sung Y.M., Choi Y.C., Park Y.J., Han I.K., Park J.I., Performance improvement of high-power AlGaAs lasers, J. Korean Phys. Soc., 47 (2005) S572.
  • [4] Zappe H., Laser Diode Microsystems, Springer Science & Business Media, (2004).
  • [5] Knauer A., Wenzel H., Erbert G., Sumpf B., Weyers M., Influence of oxygen in AlGaAs-based laser structures with Al-free active region on device properties, J. Electron. Mater., 30 (2001) 1421–1424.
  • [6] Ito M., Kimura T., Carrier density dependence of refractive index in AlGaAs semiconductor lasers, IEEE J. Quantum Electron., 16 (9) (1980) 910–911.
  • [7] Perkitel I., Kekül R., Altuntas I., Gür E., Demir I., Influence of Highly Efficient Carbon Doping on AlₓGa₁₋ₓAs Layers with Different Al Compositions (x) Grown by MOVPE, J. Electron. Mater., 52 (9) (2023) 6042–6051.
  • [8] Gullu H.H., Yıldız D.E., Yıldırım M., Demir I., Altuntas I., Electrical characteristics of Al/AlGaAs/GaAs diode with high-Al concentration at the interface, J. Mater. Sci.: Mater. Electron., 35 (2) (2024) 189.
  • [9] Watanabe M.O., Morizuka K., Mashita M., Ashizawa Y., Zohta Y., Donor levels in Si-doped AlGaAs grown by MBE, Jpn. J. Appl. Phys., 23 (2A) (1984) L103.
  • [10] Pfeffer T.L., et al., The use of diethylsulphide for the doping of AlₓGa₁₋ₓAs grown by chemical beam epitaxy, J. Cryst. Growth, 146 (1–4) (1995) 399–403.
  • [11] Kuech T.F., Tischler M.A., Potemski R., Cardone F., Scilla G., Doping and dopant behavior in (Al, Ga)As grown by metalorganic vapor phase epitaxy, J. Cryst. Growth, 98 (1–2) (1989) 174–187.
  • [12] Ishikawa T., Saito J., Sasa S., Hiyamizu S., Electrical properties of Si-doped AlₓGa₁₋ₓAs layers grown by MBE, Jpn. J. Appl. Phys., 21 (11A) (1982) L675.
  • [13] Oh-hori T., Itoh H., Tanaka H., Kasai K., Takikawa M., Komeno J., Donor–cation vacancy complex in Si-doped AlGaAs grown by metalorganic chemical vapor deposition, J. Appl. Phys., 61 (9) (1987) 4603–4605.
  • [14] Shieh H.M., Wu T.S., Hsu W.C., SiH₄-doped AlGaAs epilayers formed by MOCVD, J. Cryst. Growth, 121 (4) (1992) 665–670.
  • [15] Kalyon G., Mutlu S., Kuruoğlu F., Perkitel İ., Demir İ., Erol A., InGaAs-based Gunn light emitting diode, Mater. Sci. Semicond. Process., 159 (2023) 107389.
  • [16] Kaynar E., Sayrac M., Altuntaş İ., Demir İ., Determination of optical properties of MOVPE-grown InₓGa₁₋ₓAs/InP epitaxial structures by spectroscopic ellipsometry, Braz. J. Phys., 52 (5) (2022) 184.
  • [17] Perkitel İ., Altuntaş İ., Demir İ., The effect of Si (111) substrate surface cleaning on growth rate and crystal quality of MOVPE grown AlN, Gazi Univ. J. Sci., 35 (1) (2022) 281–291.
  • [18] Pürlü K.M., Koçak M.N., Yolcu G., Perkitel İ., Altuntaş İ., Demir İ., Growth and characterization of PALE Si-doped AlN on sapphire substrate by MOVPE, Mater. Sci. Semicond. Process., 142 (2022) 106464.
  • [19] Nanometrics, ECVPro: Electrochemical C-V Profiler User Manual, P/N: 9PROF-UM01 Rev. B.

MOVPE Growth and Doping Optimization of n-AlGaAs Layers for Laser Diode Applications

Year 2025, Volume: 46 Issue: 2, 390 - 395, 30.06.2025

Gamze Yolcu , İlkay Demir

https://doi.org/10.17776/csj.1672625

Abstract

Epitaxial n-AlₓGa₁₋ₓAs layers, which form the basis of semiconductor laser structures, play a critical role in both optical and electrical performance of the device. These layers provide electron injection into the active region and at the same time act as optical waveguides, allowing efficient steering of the laser light. Since Al concentration and doping levels have a direct effect on fundamental properties such as band gap, carrier density and resistive losses, it is of great importance to meticulously optimize these parameters. In this study, n-AlₓGa₁₋ₓAs layers grown epitaxially on GaAs substrate by MOVPE (Metal Organic Vapor Phase Epitaxy) method were processed with n-type doping process applied by using SiH₄ precursor and the effects of increasing Al concentration on doping density were investigated in detail. The obtained results show that when Al concentration is above 30%, no significant increase in doping density is observed despite the maximization of SiH₄ flow. Furthermore, the data obtained with Hall and ECV (Electrochemical Capacitance Voltage) measurements provided consistent results at low Al ratios, while significant differences were observed above 0.2 Al ratio. This comprehensive analysis reveals the current limitations in n-type doping processes and precise control of Al concentration, while providing a more in-depth interpretation by systematically comparing the obtained results with the data reported in the literature.

Keywords

MOVPE method SiH₄ doping source epitaxial growth carrier density n AlₓGa₁₋ₓAs layers

Project Number

AY_TE-2023-005 and M-2023-857

References

  • [1] Ladugin M.A.E., Marmalyuk A.A.E., Effect of (Al)GaAs/AlGaAs quantum confinement region parameters on the threshold current density of laser diodes, Quantum Electron., 49 (6) (2019) 529.
  • [2] Saeed S., Usman M., Ali S., Ali H., Mustafa L., High performance near-infrared III-Arsenide laser diodes with p-AlGaAs barriers, Opt. Mater., 139 (2023) 113809.
  • [3] Kim K.C., Kim T.G., Sung Y.M., Choi Y.C., Park Y.J., Han I.K., Park J.I., Performance improvement of high-power AlGaAs lasers, J. Korean Phys. Soc., 47 (2005) S572.
  • [4] Zappe H., Laser Diode Microsystems, Springer Science & Business Media, (2004).
  • [5] Knauer A., Wenzel H., Erbert G., Sumpf B., Weyers M., Influence of oxygen in AlGaAs-based laser structures with Al-free active region on device properties, J. Electron. Mater., 30 (2001) 1421–1424.
  • [6] Ito M., Kimura T., Carrier density dependence of refractive index in AlGaAs semiconductor lasers, IEEE J. Quantum Electron., 16 (9) (1980) 910–911.
  • [7] Perkitel I., Kekül R., Altuntas I., Gür E., Demir I., Influence of Highly Efficient Carbon Doping on AlₓGa₁₋ₓAs Layers with Different Al Compositions (x) Grown by MOVPE, J. Electron. Mater., 52 (9) (2023) 6042–6051.
  • [8] Gullu H.H., Yıldız D.E., Yıldırım M., Demir I., Altuntas I., Electrical characteristics of Al/AlGaAs/GaAs diode with high-Al concentration at the interface, J. Mater. Sci.: Mater. Electron., 35 (2) (2024) 189.
  • [9] Watanabe M.O., Morizuka K., Mashita M., Ashizawa Y., Zohta Y., Donor levels in Si-doped AlGaAs grown by MBE, Jpn. J. Appl. Phys., 23 (2A) (1984) L103.
  • [10] Pfeffer T.L., et al., The use of diethylsulphide for the doping of AlₓGa₁₋ₓAs grown by chemical beam epitaxy, J. Cryst. Growth, 146 (1–4) (1995) 399–403.
  • [11] Kuech T.F., Tischler M.A., Potemski R., Cardone F., Scilla G., Doping and dopant behavior in (Al, Ga)As grown by metalorganic vapor phase epitaxy, J. Cryst. Growth, 98 (1–2) (1989) 174–187.
  • [12] Ishikawa T., Saito J., Sasa S., Hiyamizu S., Electrical properties of Si-doped AlₓGa₁₋ₓAs layers grown by MBE, Jpn. J. Appl. Phys., 21 (11A) (1982) L675.
  • [13] Oh-hori T., Itoh H., Tanaka H., Kasai K., Takikawa M., Komeno J., Donor–cation vacancy complex in Si-doped AlGaAs grown by metalorganic chemical vapor deposition, J. Appl. Phys., 61 (9) (1987) 4603–4605.
  • [14] Shieh H.M., Wu T.S., Hsu W.C., SiH₄-doped AlGaAs epilayers formed by MOCVD, J. Cryst. Growth, 121 (4) (1992) 665–670.
  • [15] Kalyon G., Mutlu S., Kuruoğlu F., Perkitel İ., Demir İ., Erol A., InGaAs-based Gunn light emitting diode, Mater. Sci. Semicond. Process., 159 (2023) 107389.
  • [16] Kaynar E., Sayrac M., Altuntaş İ., Demir İ., Determination of optical properties of MOVPE-grown InₓGa₁₋ₓAs/InP epitaxial structures by spectroscopic ellipsometry, Braz. J. Phys., 52 (5) (2022) 184.
  • [17] Perkitel İ., Altuntaş İ., Demir İ., The effect of Si (111) substrate surface cleaning on growth rate and crystal quality of MOVPE grown AlN, Gazi Univ. J. Sci., 35 (1) (2022) 281–291.
  • [18] Pürlü K.M., Koçak M.N., Yolcu G., Perkitel İ., Altuntaş İ., Demir İ., Growth and characterization of PALE Si-doped AlN on sapphire substrate by MOVPE, Mater. Sci. Semicond. Process., 142 (2022) 106464.
  • [19] Nanometrics, ECVPro: Electrochemical C-V Profiler User Manual, P/N: 9PROF-UM01 Rev. B.
There are 19 citations in total.

Details

Primary Language English
Subjects Photonics, Optoelectronics and Optical Communications, Lasers and Quantum Electronics
Journal Section Natural Sciences
Authors

Gamze Yolcu 0000-0003-0201-8266

İlkay Demir 0000-0002-2224-989X

Project Number AY_TE-2023-005 and M-2023-857
Publication Date June 30, 2025
Submission Date April 9, 2025
Acceptance Date June 16, 2025
Published in Issue Year 2025Volume: 46 Issue: 2

Cite

APA Yolcu, G., & Demir, İ. (2025). MOVPE Growth and Doping Optimization of n-AlGaAs Layers for Laser Diode Applications. Cumhuriyet Science Journal, 46(2), 390-395. https://doi.org/10.17776/csj.1672625