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Effect of Quantum Barrier Thickness on the Optical Properties of Triple Triangular GaAs/AlGaAs Quantum Wells

Year 2025, Volume: 46 Issue: 1, 115 - 124, 25.03.2025

Behçet Özgür Alaydin

https://doi.org/10.17776/csj.1554451

Abstract

This study investigates the electronic and optical properties of a GaAs/AlxGa1-xAs triple triangular quantum well (QW) structure, focusing on the 2-4 and 3-4 intersubband transitions. By varying the right barrier (RB) thickness from 0 to 6 nm, the impact on wave function localization, energy levels, dipole moment matrix elements, absorption coefficients, and refractive index changes was analyzed using a finite element-based Schrödinger solver. Quantitative results indicate that increasing the RB breaks the symmetry of the potential, enabling the 2-4 transition and causing variations in absorption coefficients, which peak at 4 nm before declining. The 3-4 transition exhibits a higher and more stable total absorption coefficient compared to the 2-4 transition, ranging from 1100 to 1125 cm⁻¹. Additionally, the total refractive index changes for the 3-4 transition remain constant (±0.006 to ±0.009), while the 2-4 transition shows more variation (±0.001). Qualitatively, the 3-4 transition's stability and minimal energy difference from the 2-4 transition make it a more promising candidate for terahertz device applications, particularly where RB thickness constraints are present. These findings underscore the importance of barrier engineering in optimizing QW-based devices for advanced semiconductor application.

Keywords

GaAs AlGaAs Quantum Well Absorption Coefficient Refractive Index Change

Ethical Statement

Herhangi bir etik kurul izni gerektirmemektedir.

Supporting Institution

Projeye bağlı yayın değildir.

References

  • [1] Ozturk E., Sari H., Sokmen I., The dependence of the intersubband transitions in square and graded QWs on intense laser fields, Solid State Communications, 132(7) (2004) 497-502.
  • [2] Sayrac H., Jaouane M., Ed-Dahmouny A., Sali A., Ungan F., Modulation of nonlinear optical rectification, second, and third harmonic generation coefficients in n-type quadruple δ-doped GaAs quantum wells under external fields, Physica B: Condensed Matter, 690 (2024) 416252.
  • [3] Restrepo R.L., Castaño-Vanegas L.F., Martínez-Orozco J.C., Morales A.L., Duque C.A., Mid-Infrared linear optical transitions in delta-doped AlGaAs/GaAs triple-quantum well, Applied Physics A, 125(1) (2018) 31.
  • [4] Martínez-Orozco J.C., Mora-Ramos M.E., Duque C.A., The nonlinear optical absorption and corrections to the refractive index in a GaAs n-type delta-doped field effect transistor under hydrostatic pressure, Physica Status Solidi B, 249(1) (2012) 146-152.
  • [5] Ozturk O., Alaydin B.O., Altun D., Ozturk E., Intense laser field effect on the nonlinear optical properties of triple quantum wells consisting of parabolic and inverse-parabolic quantum wells, Laser Physics, 32(3) (2022) 035404.
  • [6] Alaydin B.Ö., Optical Properties of Gaas/Alxga1-xas Superlattice Under E-Field for Quantum Cascade Laser Application, Gazi University Journal of Science, 34(4) (2021) 1179-1191.
  • [7] Dakhlaoui H., Linear and nonlinear optical absorption coefficients and refractive index changes in GaN/AlxGa(1−x)N double quantum wells operating at 1.55 μm, Journal of Applied Physics, 117(13) (2015).
  • [8] Salman Durmuslar A., Investigation on nonlinear optical properties of symmetric and asymmetric double V-shaped AlxGa1-xAs/GaAs potential wells with structural parameters and external electromagnetic fields, Philosophical Magazine, 103(9) (2023) 872-891.
  • [9] Rodríguez-Magdaleno K.A., Martínez-Orozco J.C., Rodríguez-Vargas I., Mora-Ramos M.E., Duque C.A., Asymmetric GaAs n-type double δ-doped quantum wells as a source of intersubband-related nonlinear optical response: Effects of an applied electric field, Journal of Luminescence, 147 (2014) 77-84.
  • [10] Barseghyan M.G., Hakimyfard A., López S.Y., Duque C.A., Kirakosyan A.A., Simultaneous effects of hydrostatic pressure and temperature on donor binding energy and photoionization cross section in Pöschl– Teller quantum well, Physica E: Low-dimensional Systems and Nanostructures, 42(5) (2010) 1618-1622.
  • [11] Karabulut İ., Atav Ü., Şafak H., Tomak M., Linear and nonlinear intersubband optical absorptions in an asymmetric rectangular quantum well, The European Physical Journal B, 55(3) (2007) 283-288.
  • [12] Sayrac M., Effects of applied external fields on the nonlinear optical rectification, second, and third-harmonic generation in an asymmetrical semi exponential quantum well, Optical and Quantum Electronics, 54(1) (2021) 52.
  • [13] Karimi M.J., Keshavarz A., Poostforush A., Linear and nonlinear intersubband optical absorption and refractive index changes of asymmetric double semi-parabolic quantum wells, Superlattices and Microstructures, 49(4) (2011) 441-452.
  • [14] Niculescu E.C., Burileanu L.M., Radu A., Density of impurity states of shallow donors in a quantum well under intense laser field, Superlattices and Microstructures, 44(2) (2008) 173-182.
  • [15] Liu G., Guo K., Zhang Z., Hassanbadi H., Lu L., Electric field effects on nonlinear optical rectification in symmetric coupled AlxGa1−xAs/GaAs quantum wells, Thin Solid Films, 662 (2018) 27-32.
  • [16] Altun D., Ozturk O., Alaydin B.O., Ozturk E., Linear and nonlinear optical properties of a superlattice with periodically increased well width under electric and magnetic fields, Micro and Nanostructures, 166 (2022) 207225.
  • [17] Nakamura K., Shimizu A., Koshiba M., Hayata K., Finite-element analysis of quantum wells of arbitrary semiconductors with arbitrary potential profiles, IEEE Journal of Quantum Electronics, 25(5) (1989) 889-895.
  • [18] Karimi M.J., Keshavarz A., Second harmonic generation in asymmetric double semi-parabolic quantum wells: Effects of electric and magnetic fields, hydrostatic pressure and temperature, Physica E: Low-dimensional Systems and Nanostructures, 44(9) (2012) 1900-1904.
  • [19] Ozturk E., Nonlinear optical absorption in graded quantum wells modulated by electric field and intense laser field, The European Physical Journal B, 75(2) (2010) 197-203.
  • [20]Alaydin B.O., Altun D., Ozturk E., Linear and nonlinear optical properties of semi-elliptical InAs quantum dots: Effects of wetting layer thickness and electric field, Thin Solid Films, 755 (2022) 139322.
  • [21] Kaynar E., Alaydin B.O., Optical properties of AlxInyGa1−x−yAs/AlzGawIn1−z−wAs quantum wells under electric and magnetic fields for telecommunication applications, The European Physical Journal Plus, 138(2) (2023) 121.
  • [22] Alaydin B.O., Effect of high bandgap AlAs quantum barrier on electronic and optical properties of In0.70Ga0.30As/Al0.60In0.40As superlattice under applied electric field for laser and detector applications, International Journal of Modern Physics B, 35(02) (2021) 2150027.
  • [23]Zhang Z.-H., Yuan J.-H., Guo K.-X., The Combined Influence of Hydrostatic Pressure and Temperature on Nonlinear Optical Properties of GaAs/Ga0.7Al0.3As Morse Quantum Well in the Presence of an Applied Magnetic Field, Materials, 11(5) (2018) 668.
  • [24]Alaydin B.O., Altun D., Ozturk O., Ozturk E., High harmonic generations triggered by the intense laser field in GaAs/AlxGa1-xAs honeycomb quantum well wires, Materials Today Physics, 38 (2023) 101232.
  • [25]Ozturk E., Nonlinear intersubband transitions in different shaped quantum wells under intense laser field, Superlattices and Microstructures, 82 (2015) 303-312.

Year 2025, Volume: 46 Issue: 1, 115 - 124, 25.03.2025

Behçet Özgür Alaydin

https://doi.org/10.17776/csj.1554451

Abstract

References

  • [1] Ozturk E., Sari H., Sokmen I., The dependence of the intersubband transitions in square and graded QWs on intense laser fields, Solid State Communications, 132(7) (2004) 497-502.
  • [2] Sayrac H., Jaouane M., Ed-Dahmouny A., Sali A., Ungan F., Modulation of nonlinear optical rectification, second, and third harmonic generation coefficients in n-type quadruple δ-doped GaAs quantum wells under external fields, Physica B: Condensed Matter, 690 (2024) 416252.
  • [3] Restrepo R.L., Castaño-Vanegas L.F., Martínez-Orozco J.C., Morales A.L., Duque C.A., Mid-Infrared linear optical transitions in delta-doped AlGaAs/GaAs triple-quantum well, Applied Physics A, 125(1) (2018) 31.
  • [4] Martínez-Orozco J.C., Mora-Ramos M.E., Duque C.A., The nonlinear optical absorption and corrections to the refractive index in a GaAs n-type delta-doped field effect transistor under hydrostatic pressure, Physica Status Solidi B, 249(1) (2012) 146-152.
  • [5] Ozturk O., Alaydin B.O., Altun D., Ozturk E., Intense laser field effect on the nonlinear optical properties of triple quantum wells consisting of parabolic and inverse-parabolic quantum wells, Laser Physics, 32(3) (2022) 035404.
  • [6] Alaydin B.Ö., Optical Properties of Gaas/Alxga1-xas Superlattice Under E-Field for Quantum Cascade Laser Application, Gazi University Journal of Science, 34(4) (2021) 1179-1191.
  • [7] Dakhlaoui H., Linear and nonlinear optical absorption coefficients and refractive index changes in GaN/AlxGa(1−x)N double quantum wells operating at 1.55 μm, Journal of Applied Physics, 117(13) (2015).
  • [8] Salman Durmuslar A., Investigation on nonlinear optical properties of symmetric and asymmetric double V-shaped AlxGa1-xAs/GaAs potential wells with structural parameters and external electromagnetic fields, Philosophical Magazine, 103(9) (2023) 872-891.
  • [9] Rodríguez-Magdaleno K.A., Martínez-Orozco J.C., Rodríguez-Vargas I., Mora-Ramos M.E., Duque C.A., Asymmetric GaAs n-type double δ-doped quantum wells as a source of intersubband-related nonlinear optical response: Effects of an applied electric field, Journal of Luminescence, 147 (2014) 77-84.
  • [10] Barseghyan M.G., Hakimyfard A., López S.Y., Duque C.A., Kirakosyan A.A., Simultaneous effects of hydrostatic pressure and temperature on donor binding energy and photoionization cross section in Pöschl– Teller quantum well, Physica E: Low-dimensional Systems and Nanostructures, 42(5) (2010) 1618-1622.
  • [11] Karabulut İ., Atav Ü., Şafak H., Tomak M., Linear and nonlinear intersubband optical absorptions in an asymmetric rectangular quantum well, The European Physical Journal B, 55(3) (2007) 283-288.
  • [12] Sayrac M., Effects of applied external fields on the nonlinear optical rectification, second, and third-harmonic generation in an asymmetrical semi exponential quantum well, Optical and Quantum Electronics, 54(1) (2021) 52.
  • [13] Karimi M.J., Keshavarz A., Poostforush A., Linear and nonlinear intersubband optical absorption and refractive index changes of asymmetric double semi-parabolic quantum wells, Superlattices and Microstructures, 49(4) (2011) 441-452.
  • [14] Niculescu E.C., Burileanu L.M., Radu A., Density of impurity states of shallow donors in a quantum well under intense laser field, Superlattices and Microstructures, 44(2) (2008) 173-182.
  • [15] Liu G., Guo K., Zhang Z., Hassanbadi H., Lu L., Electric field effects on nonlinear optical rectification in symmetric coupled AlxGa1−xAs/GaAs quantum wells, Thin Solid Films, 662 (2018) 27-32.
  • [16] Altun D., Ozturk O., Alaydin B.O., Ozturk E., Linear and nonlinear optical properties of a superlattice with periodically increased well width under electric and magnetic fields, Micro and Nanostructures, 166 (2022) 207225.
  • [17] Nakamura K., Shimizu A., Koshiba M., Hayata K., Finite-element analysis of quantum wells of arbitrary semiconductors with arbitrary potential profiles, IEEE Journal of Quantum Electronics, 25(5) (1989) 889-895.
  • [18] Karimi M.J., Keshavarz A., Second harmonic generation in asymmetric double semi-parabolic quantum wells: Effects of electric and magnetic fields, hydrostatic pressure and temperature, Physica E: Low-dimensional Systems and Nanostructures, 44(9) (2012) 1900-1904.
  • [19] Ozturk E., Nonlinear optical absorption in graded quantum wells modulated by electric field and intense laser field, The European Physical Journal B, 75(2) (2010) 197-203.
  • [20]Alaydin B.O., Altun D., Ozturk E., Linear and nonlinear optical properties of semi-elliptical InAs quantum dots: Effects of wetting layer thickness and electric field, Thin Solid Films, 755 (2022) 139322.
  • [21] Kaynar E., Alaydin B.O., Optical properties of AlxInyGa1−x−yAs/AlzGawIn1−z−wAs quantum wells under electric and magnetic fields for telecommunication applications, The European Physical Journal Plus, 138(2) (2023) 121.
  • [22] Alaydin B.O., Effect of high bandgap AlAs quantum barrier on electronic and optical properties of In0.70Ga0.30As/Al0.60In0.40As superlattice under applied electric field for laser and detector applications, International Journal of Modern Physics B, 35(02) (2021) 2150027.
  • [23]Zhang Z.-H., Yuan J.-H., Guo K.-X., The Combined Influence of Hydrostatic Pressure and Temperature on Nonlinear Optical Properties of GaAs/Ga0.7Al0.3As Morse Quantum Well in the Presence of an Applied Magnetic Field, Materials, 11(5) (2018) 668.
  • [24]Alaydin B.O., Altun D., Ozturk O., Ozturk E., High harmonic generations triggered by the intense laser field in GaAs/AlxGa1-xAs honeycomb quantum well wires, Materials Today Physics, 38 (2023) 101232.
  • [25]Ozturk E., Nonlinear intersubband transitions in different shaped quantum wells under intense laser field, Superlattices and Microstructures, 82 (2015) 303-312.
There are 25 citations in total.

Details

Primary Language English
Subjects Photonics, Optoelectronics and Optical Communications
Journal Section Natural Sciences
Authors

Behçet Özgür Alaydin 0000-0003-0935-4836

Publication Date March 25, 2025
Submission Date September 23, 2024
Acceptance Date December 29, 2024
Published in Issue Year 2025Volume: 46 Issue: 1

Cite

APA Alaydin, B. Ö. (2025). Effect of Quantum Barrier Thickness on the Optical Properties of Triple Triangular GaAs/AlGaAs Quantum Wells. Cumhuriyet Science Journal, 46(1), 115-124. https://doi.org/10.17776/csj.1554451
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