XRD and photoluminescence measurements of GaN grown on dome shaped patterned sapphire with different NH3 flow rates

İsmail Altuntas

doi:10.17776/csj.858546

EN

XRD and photoluminescence measurements of GaN grown on dome shaped patterned sapphire with different NH3 flow rates

Abstract

The aim of the study is to understand the effects of NH3 flow rate in the initial part of high temperature (HT) GaN growth on structural and optical characteristics of the HT-GaN layer grown on dome shaped sapphire susbtrate by Metal Organic Chemical Vapor Deposition (MOCVD) system. High resolution x-ray diffraction (HRXRD) and photoluminescence (PL) measurements were performed to characterization the growing GaN epilayer. It is observed that the using of different NH3 flow rate in the initial part of HT-GaN growth has an effect on both full-width at half-maximum (FWHM) values obtained from HRXRD results and intensities of yellow luminescence peaks. It is seen that the FWHM values obtained from the symmetric (00.2) omega scan increased as the NH3 flow rates in the initial part of HT-GaN growth increased. It is demonstrated that the intensities of yellow luminescence peaks are very sensitive to NH3 flow rates in the initial part of HT-GaN growth.

Keywords

Supporting Institution

Scientific Research Project Fund of Sivas Cumhuriyet University

Project Number

M-768

Thanks

Nanophotonics Research and Application Center at Cumhuriyet University (CUNAM) and Sivas Cumhuriyet University Advanced Technology Research and Application Center (CUTAM)

References

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Details

Primary Language

English

Subjects

Classical Physics (Other)

Journal Section

Research Article

Authors

İsmail Altuntas ^*
0000-0002-3979-7868
Türkiye

Publication Date

March 29, 2021

Submission Date

January 11, 2021

Acceptance Date

March 11, 2021

Published in Issue

Year 2021 Volume: 42 Number: 1

DOI

https://doi.org/10.17776/csj.858546

IZ

https://izlik.org/JA72HP22HW

Cite

RIS / Bibtex

APA

Altuntas, İ. (2021). XRD and photoluminescence measurements of GaN grown on dome shaped patterned sapphire with different NH3 flow rates. Cumhuriyet Science Journal, 42(1), 184-190. https://doi.org/10.17776/csj.858546

Cited By

Modeling of temperature-dependent photoluminescence of GaN epilayer by artificial neural network

Journal of the Australian Ceramic Society

https://doi.org/10.1007/s41779-023-00911-w

Öz

XRD and photoluminescence measurements of GaN grown on dome shaped patterned sapphire with different NH3 flow rates

Abstract

Keywords

Supporting Institution

Project Number

Thanks

References

Details

Primary Language

Subjects

Journal Section

Authors

Publication Date

Submission Date

Acceptance Date

Published in Issue

DOI

IZ

Cite

Cited By

Modeling of temperature-dependent photoluminescence of GaN epilayer by artificial neural network