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İsmail Altuntas
Dr.
Sivas Cumhuriyet Üniversitesi
Publication
3
Review
2
CrossRef Cited
11
3
Publication
2
Review
11
CrossRef Cited
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Summary
Publications
Peer Review
Cited
Research Fields
Photonics, Optoelectronics and Optical Communications
Institution
Sivas Cumhuriyet Üniversitesi
Publications
The Effect of Si (111) Substrate Surface Cleaning on Growth Rate and Crystal Quality of MOVPE Grown AlN
Authors:
İzel Perkitel
,
İsmail Altuntas
,
İlkay Demir
Published: 2022 ,
Gazi University Journal of Science
DOI: 10.35378/gujs.822954
FAVORITE
0
TOTAL DOWNLOAD COUNT
1410
0
FAVORITE
1410
TOTAL DOWNLOAD COUNT
The GaN Epilayer Grown by MOVPE: Effect of The Different Nucleation Layer Temperatures
Authors:
İsmail Altuntas
,
Sezai Elagöz
Published: 2021 ,
International Journal of Innovative Engineering Applications
DOI: 10.46460/ijiea.898795
FAVORITE
0
TOTAL DOWNLOAD COUNT
767
0
FAVORITE
767
TOTAL DOWNLOAD COUNT
XRD and photoluminescence measurements of GaN grown on dome shaped patterned sapphire with different NH3 flow rates
Authors:
İsmail Altuntas
Published: 2021 ,
Cumhuriyet Science Journal
DOI: 10.17776/csj.858546
FAVORITE
0
TOTAL DOWNLOAD COUNT
801
0
FAVORITE
801
TOTAL DOWNLOAD COUNT
Articles published in
Cumhuriyet Science Journal
Gazi University Journal of Science
International Journal of Innovative Engineering Applications
Reviews
Cumhuriyet Science Journal
International Journal of Innovative Engineering Applications
Publications
The Effect of Si (111) Substrate Surface Cleaning on Growth Rate and Crystal Quality of MOVPE Grown AlN
Authors:
İzel Perkitel
,
İsmail Altuntas
,
İlkay Demir
Published: 2022 ,
Gazi University Journal of Science
DOI: 10.35378/gujs.822954
CITED
9
FAVORITE
0
TOTAL DOWNLOAD COUNT
1410
9
CITED
0
FAVORITE
1410
TOTAL DOWNLOAD COUNT
The GaN Epilayer Grown by MOVPE: Effect of The Different Nucleation Layer Temperatures
Authors:
İsmail Altuntas
,
Sezai Elagöz
Published: 2021 ,
International Journal of Innovative Engineering Applications
DOI: 10.46460/ijiea.898795
CITED
1
FAVORITE
0
TOTAL DOWNLOAD COUNT
767
1
CITED
0
FAVORITE
767
TOTAL DOWNLOAD COUNT
XRD and photoluminescence measurements of GaN grown on dome shaped patterned sapphire with different NH3 flow rates
Authors:
İsmail Altuntas
Published: 2021 ,
Cumhuriyet Science Journal
DOI: 10.17776/csj.858546
CITED
1
FAVORITE
0
TOTAL DOWNLOAD COUNT
801
1
CITED
0
FAVORITE
801
TOTAL DOWNLOAD COUNT
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