Research Article
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Year 2021, , 715 - 721, 24.09.2021
https://doi.org/10.17776/csj.923274

Abstract

References

  • [1] Cooper E. I., Bonhote C., Heidmann J., Hsu Y., Kern P., Lam J. W., Ramasubramanian M., Robertson N., Romankiw L. T., Xu H., Recent developments in high-moment electroplated materials for recording heads, IBM Journal of Research and Development, 49 (1) (2005) 103-126.
  • [2] Chen A. P., Burton J. D., Tsymbal E. Y., Feng Y. P., Chen J., Effects of B and C doping on tunneling magnetoresistance in CoFe/MgO magnetic tunnel junctions, Physical Review B, 98 (4) (2018) 045129.
  • [3] Parkin S. S., Kaiser C., Panchula A., Rice P. M., Hughes B., Samant M., Yang S. H., Giant tunnelling magnetoresistance at room temperature with MgO (100) tunnel barriers, Nature Materials, 3 (12) (2004) 862-867.
  • [4] Platt C. L., Minor N. K., Klemmer T. J., Magnetic and structural properties of FeCoB thin films, IEEE Transactions on Magnetics, 37 (4) (2001) 2302-2304.
  • [5] Djayaprawira D. D., Tsunekawa K., Nagai M., Maehara H., Yamagata S., Watanabe N., Yuasa S., Suzuki Y., Ando K., 230% room-temperature magnetoresistance in CoFeB∕MgO∕CoFeB magnetic tunnel junctions, Applied Physics Letters, 86 (9) (2005) 092502.
  • [6] Ikeda S., Miura K., Yamamoto H., Mizunuma K., Gan H. D., Endo M., Kanai S., Hayakawa J., Matsukara F., Ohno H., A perpendicular-anisotropy CoFeB–MgO magnetic tunnel junction, Nature Materials, 9 (9) (2010) 721-724.
  • [7] Kubota H., Fukushima A., Yakushiji K., Nagahama T., Yuasa S., Ando K., Maehara H., Nagamine Y., Tsunekawa K., Djayaprawira D. D., Watanabe N., Suzuki Y., Quantitative measurement of voltage dependence of spin-transfer torque in MgO-based magnetic tunnel junctions, Nature Physics, 4 (1) (2008) 37-41.
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  • [9] Cheng C.-W., Feng W., Chern G., Lee C. M., Wu T.-H., Effect of cap layer thickness on the perpendicular magnetic anisotropy in top MgO/CoFeB/Ta structures, Journal of Applied Physics, 110 (3) (2011) 033916.
  • [10] Hindmarch A. T., Dempsey K. J., Ciudad D., Negusse E., Arena D. A., Marrows C. H., Fe diffusion, oxidation, and reduction at the CoFeB/MgO interface studied by soft x-ray absorption spectroscopy and magnetic circular dichroism, Applied Physics Letters, 96 (9) (2010) 092501.
  • [11] Ikeda S., Hayakawa J., Ashizawa Y., Lee Y. M., Miura K., Hasegawa H., Tsunoda M., Matsukura F., Ohno H., Tunnel magnetoresistance of 604% at 300 K by suppression of Ta diffusion in CoFeB∕MgO∕CoFeB pseudo-spin-valves annealed at high temperature, Applied Physics Letters, 93 (8) (2008) 082508.
  • [12] Wang W. X., Yang Y., Naganuma H., Ando Y., Yu R. C., Han X. F., The perpendicular anisotropy of Co40Fe40B20 sandwiched between Ta and MgO layers and its application in CoFeB/MgO/CoFeB tunnel junction, Applied Physics Letters, 99 (1) (2011) 012502.
  • [13] Worledge D. C., Hu G., Abraham D. W., Sun J. Z., Trouilloud P. L., Nowak J., Brown S., Gaidis M. C., O’Sullivan E. J., Robertazzi R. P., Spin torque switching of perpendicular Ta∣CoFeB∣MgO-based magnetic tunnel junctions, Applied Physics Letters, 98 (2) (2011) 022501.
  • [14] Tokaç M., Kinane C. J., Atkinson D., Hindmarch A. T., Temperature dependence of magnetically dead layers in ferromagnetic thin-films, AIP Advances, 7 (11) (2017) 115022.
  • [15] Björck M., Andersson G., GenX: an extensible X-ray reflectivity refinement program utilizing differential evolution, J. Appl. Crystallogr., 40 (6) (2007) 1174-1178.
  • [16] Zhang S., Levy P. M., Enhanced spin-dependent scattering at interfaces, Physical Review Letters, 77 (5) (1996) 916.
  • [17] Fleischmann C., Almeida F., Demeter J., Paredis K., Teichert A., Steitz R., Brems S., Opperdoes B., Van Haesendonck C., Vantomme A., Temst K., The influence of interface roughness on the magnetic properties of exchange biased CoO/Fe thin films, Journal of Applied Physics, 107 (11) (2010) 113907.
  • [18] Jang S. Y., Lim S. H., Lee S. R., Magnetic dead layer in amorphous CoFeB layers with various top and bottom structures, Journal of Applied Physics, 107 (9) (2010) 09C707.
  • [19] Greer A. A., Gray A. X., Kanai S., Kaiser A. M., Ueda S., Yamashita Y., Bordel C., Palsson G., Maejima N., Yang S.-H., Conti G., Kobayashi K., Ikeda S., Matsukura F., Ohno H., Schneider C. M., Kortright J. B., Hellman F., Fadley C. S., Observation of boron diffusion in an annealed Ta/CoFeB/MgO magnetic tunnel junction with standing-wave hard x-ray photoemission, Applied Physics Letters, 101 (20) (2012) 202402.
  • [20] Inyang O., Bouchenoire L., Nicholson B., Tokaç M., Rowan-Robinson R. M., Kinane C. J., Hindmarch A. T., Threshold interface magnetization required to induce magnetic proximity effect, Physical Review B, 100 (17) (2019) 174418.

Magnetic phase transitions due to compositional variation across amorphous thin–films

Year 2021, , 715 - 721, 24.09.2021
https://doi.org/10.17776/csj.923274

Abstract

The structural and magnetic properties of amorphous thin–films with various CoFeTaB thicknesses were studied to observe magnetic phase transitions due to compositional variation through the CoFeTaB layer. The investigations of the structural properties of amorphous CoFeTaB thin–films were undertaken to confirm layer thickness, interface roughness, and their amorphous structure. Temperature dependent magnetic characterizations were performed to extract Curie temperatures of each thin–film structure, where there is evidence of more than one magnetic transition point. These transition points indicate magnetic phase transitions, which may be attributed to compositional variations across the amorphous CoFeTaB thin–films. Investigation of diffusion process in ferromagnetic thin–films is crucial for the development of spintronic applications.

References

  • [1] Cooper E. I., Bonhote C., Heidmann J., Hsu Y., Kern P., Lam J. W., Ramasubramanian M., Robertson N., Romankiw L. T., Xu H., Recent developments in high-moment electroplated materials for recording heads, IBM Journal of Research and Development, 49 (1) (2005) 103-126.
  • [2] Chen A. P., Burton J. D., Tsymbal E. Y., Feng Y. P., Chen J., Effects of B and C doping on tunneling magnetoresistance in CoFe/MgO magnetic tunnel junctions, Physical Review B, 98 (4) (2018) 045129.
  • [3] Parkin S. S., Kaiser C., Panchula A., Rice P. M., Hughes B., Samant M., Yang S. H., Giant tunnelling magnetoresistance at room temperature with MgO (100) tunnel barriers, Nature Materials, 3 (12) (2004) 862-867.
  • [4] Platt C. L., Minor N. K., Klemmer T. J., Magnetic and structural properties of FeCoB thin films, IEEE Transactions on Magnetics, 37 (4) (2001) 2302-2304.
  • [5] Djayaprawira D. D., Tsunekawa K., Nagai M., Maehara H., Yamagata S., Watanabe N., Yuasa S., Suzuki Y., Ando K., 230% room-temperature magnetoresistance in CoFeB∕MgO∕CoFeB magnetic tunnel junctions, Applied Physics Letters, 86 (9) (2005) 092502.
  • [6] Ikeda S., Miura K., Yamamoto H., Mizunuma K., Gan H. D., Endo M., Kanai S., Hayakawa J., Matsukara F., Ohno H., A perpendicular-anisotropy CoFeB–MgO magnetic tunnel junction, Nature Materials, 9 (9) (2010) 721-724.
  • [7] Kubota H., Fukushima A., Yakushiji K., Nagahama T., Yuasa S., Ando K., Maehara H., Nagamine Y., Tsunekawa K., Djayaprawira D. D., Watanabe N., Suzuki Y., Quantitative measurement of voltage dependence of spin-transfer torque in MgO-based magnetic tunnel junctions, Nature Physics, 4 (1) (2008) 37-41.
  • [8] Fukamichi K., Gambino R. J., The Curie temperature and magnetization of Fe-base amorphous binary alloys containing transition metal, IEEE Transactions on Magnetics, 17 (6) (1981) 3059-3061.
  • [9] Cheng C.-W., Feng W., Chern G., Lee C. M., Wu T.-H., Effect of cap layer thickness on the perpendicular magnetic anisotropy in top MgO/CoFeB/Ta structures, Journal of Applied Physics, 110 (3) (2011) 033916.
  • [10] Hindmarch A. T., Dempsey K. J., Ciudad D., Negusse E., Arena D. A., Marrows C. H., Fe diffusion, oxidation, and reduction at the CoFeB/MgO interface studied by soft x-ray absorption spectroscopy and magnetic circular dichroism, Applied Physics Letters, 96 (9) (2010) 092501.
  • [11] Ikeda S., Hayakawa J., Ashizawa Y., Lee Y. M., Miura K., Hasegawa H., Tsunoda M., Matsukura F., Ohno H., Tunnel magnetoresistance of 604% at 300 K by suppression of Ta diffusion in CoFeB∕MgO∕CoFeB pseudo-spin-valves annealed at high temperature, Applied Physics Letters, 93 (8) (2008) 082508.
  • [12] Wang W. X., Yang Y., Naganuma H., Ando Y., Yu R. C., Han X. F., The perpendicular anisotropy of Co40Fe40B20 sandwiched between Ta and MgO layers and its application in CoFeB/MgO/CoFeB tunnel junction, Applied Physics Letters, 99 (1) (2011) 012502.
  • [13] Worledge D. C., Hu G., Abraham D. W., Sun J. Z., Trouilloud P. L., Nowak J., Brown S., Gaidis M. C., O’Sullivan E. J., Robertazzi R. P., Spin torque switching of perpendicular Ta∣CoFeB∣MgO-based magnetic tunnel junctions, Applied Physics Letters, 98 (2) (2011) 022501.
  • [14] Tokaç M., Kinane C. J., Atkinson D., Hindmarch A. T., Temperature dependence of magnetically dead layers in ferromagnetic thin-films, AIP Advances, 7 (11) (2017) 115022.
  • [15] Björck M., Andersson G., GenX: an extensible X-ray reflectivity refinement program utilizing differential evolution, J. Appl. Crystallogr., 40 (6) (2007) 1174-1178.
  • [16] Zhang S., Levy P. M., Enhanced spin-dependent scattering at interfaces, Physical Review Letters, 77 (5) (1996) 916.
  • [17] Fleischmann C., Almeida F., Demeter J., Paredis K., Teichert A., Steitz R., Brems S., Opperdoes B., Van Haesendonck C., Vantomme A., Temst K., The influence of interface roughness on the magnetic properties of exchange biased CoO/Fe thin films, Journal of Applied Physics, 107 (11) (2010) 113907.
  • [18] Jang S. Y., Lim S. H., Lee S. R., Magnetic dead layer in amorphous CoFeB layers with various top and bottom structures, Journal of Applied Physics, 107 (9) (2010) 09C707.
  • [19] Greer A. A., Gray A. X., Kanai S., Kaiser A. M., Ueda S., Yamashita Y., Bordel C., Palsson G., Maejima N., Yang S.-H., Conti G., Kobayashi K., Ikeda S., Matsukura F., Ohno H., Schneider C. M., Kortright J. B., Hellman F., Fadley C. S., Observation of boron diffusion in an annealed Ta/CoFeB/MgO magnetic tunnel junction with standing-wave hard x-ray photoemission, Applied Physics Letters, 101 (20) (2012) 202402.
  • [20] Inyang O., Bouchenoire L., Nicholson B., Tokaç M., Rowan-Robinson R. M., Kinane C. J., Hindmarch A. T., Threshold interface magnetization required to induce magnetic proximity effect, Physical Review B, 100 (17) (2019) 174418.
There are 20 citations in total.

Details

Primary Language English
Subjects Classical Physics (Other)
Journal Section Natural Sciences
Authors

Mustafa Tokaç 0000-0001-5614-2292

Publication Date September 24, 2021
Submission Date May 19, 2021
Acceptance Date July 3, 2021
Published in Issue Year 2021

Cite

APA Tokaç, M. (2021). Magnetic phase transitions due to compositional variation across amorphous thin–films. Cumhuriyet Science Journal, 42(3), 715-721. https://doi.org/10.17776/csj.923274