Pressure and temperature effects on magnetoelectric band energies in GaAs / InxGa1-xAs cylindrical quantum wires

Pınar Başer

doi:10.17776/csj.747296

EN

Pressure and temperature effects on magnetoelectric band energies in GaAs / InxGa1-xAs cylindrical quantum wires

Abstract

Low-dimensional systems, consisting of GaAs / InGaAs heterostructures, have attracted considerable attention due to their many applications in optoelectronic and microelectronic devices. In the present work, the electron and the heavy-hole ground state energy in an InGaAs/GaAs cylindrical quantum well wires (CQWWs) is investigated with the consideration of geometrical confinement. The ground state energy was calculated as a function of hydrostatic pressure and temperature. Under the constant pressure and at a certain magnetic field value, while the ground state energy of the electron and the hole decreases depending on the temperature, it is observed that the energy increases as the hydrostatic pressure increases under the constant temperature. These calculations are interpreted with graphics.

Keywords

References

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Details

Primary Language

English

Subjects

Classical Physics (Other)

Journal Section

Research Article

Authors

Pınar Başer ^*
0000-0003-0396-0210
Türkiye

Publication Date

September 30, 2020

Submission Date

June 2, 2020

Acceptance Date

August 5, 2020

Published in Issue

Year 2020 Volume: 41 Number: 3

DOI

https://doi.org/10.17776/csj.747296

IZ

https://izlik.org/JA25BD32XE

Cite

RIS / Bibtex

APA

Başer, P. (2020). Pressure and temperature effects on magnetoelectric band energies in GaAs / InxGa1-xAs cylindrical quantum wires. Cumhuriyet Science Journal, 41(3), 699-705. https://doi.org/10.17776/csj.747296

Cited By

Effect of pressure, temperature, and magnetic field on the binding energy of the electron-hole system in III-V group semiconductors

Cumhuriyet Science Journal

https://doi.org/10.17776/csj.872732

Öz

Pressure and temperature effects on magnetoelectric band energies in GaAs / InxGa1-xAs cylindrical quantum wires

Abstract

Keywords

References

Details

Primary Language

Subjects

Journal Section

Authors

Publication Date

Submission Date

Acceptance Date

Published in Issue

DOI

IZ

Cite

Cited By

Effect of pressure, temperature, and magnetic field on the binding energy of the electron-hole system in III-V group semiconductors