Electronic characteristics of asymmetric triple GaAlAs/GaAs and GaInAs/GaAs quantum wells depending on Al and In concentration

Ozan Öztürk; Emine Öztürk; Sezai Elagöz

doi:10.17776/csj.652216

EN

Electronic characteristics of asymmetric triple GaAlAs/GaAs and GaInAs/GaAs quantum wells depending on Al and In concentration

Abstract

Herein, the electronic characteristics of asymmetric triple Ga1-x Alx As/GaAs quantum wells (A model) and Ga1-x Inx As/GaAs quantum wells (B model) have been examined as dependent on Al and In concentration. The energy levels, the wave functions and the finding probability of electron in quantum well (QW) of these systems under effective mass approach were concluded by Schrödinger equation solution. According to our results, the main differences between models A and B are effective mass and energy gap. For A model, GaAlAs is the barrier and GaAs is the well. Whereas for B model, GaAs is the barrier and GaInAs is the well. Also, the energy levels and the potential height of B model are unceasingly higher than of B model. The concentration ratio has a great impact on the electronic features of the asymmetric triple quantum well (ATQW). These features have a convenient attention for the purpose of adjustable semiconductor devices.

Keywords

Supporting Institution

Sivas Cumhuriyet University

Project Number

M-679

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Details

Primary Language

English

Subjects

-

Journal Section

Research Article

Authors

Ozan Öztürk ^*
0000-0002-9592-3152
Türkiye

Emine Öztürk
0000-0003-2508-0863
Türkiye

Sezai Elagöz
0000-0002-3600-8640
Türkiye

Publication Date

September 30, 2020

Submission Date

November 28, 2019

Acceptance Date

February 19, 2020

Published in Issue

Year 2020 Volume: 41 Number: 3

DOI

https://doi.org/10.17776/csj.652216

IZ

https://izlik.org/JA68SA49SK

Cite

RIS / Bibtex

APA

Öztürk, O., Öztürk, E., & Elagöz, S. (2020). Electronic characteristics of asymmetric triple GaAlAs/GaAs and GaInAs/GaAs quantum wells depending on Al and In concentration. Cumhuriyet Science Journal, 41(3), 565-570. https://doi.org/10.17776/csj.652216

Cited By

The third-order nonlinear optical susceptibility of Al$$_{x}$$Ga$$_{1-x}$$As/GaAs asymmetric triple quantum wells

The European Physical Journal Plus

https://doi.org/10.1140/epjp/s13360-022-03589-4