Research Article

Electronic properties of double GaAlAs/GaAs and GaInAs/GaAs quantum wells as dependent on well width

Volume: 40 Number: 2 June 30, 2019
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Electronic properties of double GaAlAs/GaAs and GaInAs/GaAs quantum wells as dependent on well width

Abstract

Herein, the electronic properties of double Ga1-x Alx As/GaAs quantum wells (A model) and Ga1-x Inx As/GaAs quantum wells (B model) have been examined related to the well width. The wave functions, the subband energies and the probability densities of these systems under effective mass approach were determined by the solution of Schrödinger equation. According to the results obtained, the major diversities of A and B models are the effective mass and the energy gap. For A model, GaAlAs is the barrier and GaAs is the well. Whereas for B model, GaAs is the barrier and GaInAs is the well. Also, the potential depth and the energy levels of A model are continuously smaller than of B model. The well width has a great impact on the electronic features of the double quantum well (DQW). These features have a convenient attention for the purpose of adjustable semiconductor devices.

Keywords

References

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Details

Primary Language

English

Subjects

-

Journal Section

Research Article

Authors

Publication Date

June 30, 2019

Submission Date

February 1, 2019

Acceptance Date

April 3, 2019

Published in Issue

Year 2019 Volume: 40 Number: 2

DOI

https://doi.org/10.17776/csj.520766

IZ

https://izlik.org/JA79RC52MM

Cite

RIS / Bibtex
APA
Ozturk, O., Ozturk, E., & Elagoz, S. (2019). Electronic properties of double GaAlAs/GaAs and GaInAs/GaAs quantum wells as dependent on well width. Cumhuriyet Science Journal, 40(2), 471-476. https://doi.org/10.17776/csj.520766

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