Research Article

Structural and Optical Properties of Indium Selenide (InSe) Thin Films Deposited on Glass and GaSe Single Crystal Substrates by SILAR Method

Volume: 40 Number: 3 September 30, 2019
EN

Structural and Optical Properties of Indium Selenide (InSe) Thin Films Deposited on Glass and GaSe Single Crystal Substrates by SILAR Method

Abstract

Structural, morphological and optical properties of undoped and boron doped Indium Selenide (InSe) thin films grown on glass and layered Gallium Selenide (GaSe) single crystal substrates with SILAR method have been investigated by XRD, AFM and UV-Vis spectrophotometer techniques. XRD measurements showed that the crystal structure of InSe thin films grown on glass substrates were hexagonal P61 γ-In2Se3 with lattice parameters a=7.1286 Å, c=19.382 Å and z=6 while the InSe thin films grew as hexagonal P63/mmc InSe with lattice parameters a=4.005 Å, c=16.640 Å and z=4 on GaSe single crystal substrates. The AFM images showed that average particle sizes of undoped and boron doped InSe thin films were found to be varying between 26.5-60.2 nm and 30.9-101.5 nm grown on glass and GaSe single crystal substrates, respectively. The optical absorption spectra of undoped and boron doped InSe thin films grown on both glass and GaSe single crystal substrates showed absorption maxima around the 2.00 and 2.24 eV, respectively. The calculated Urbach energies of the InSe thin films grown on glass substrates were found bigger than those of the InSe thin films grown on GaSe single crystal substrates.

Keywords

References

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Details

Primary Language

English

Subjects

-

Journal Section

Research Article

Publication Date

September 30, 2019

Submission Date

January 30, 2019

Acceptance Date

August 19, 2019

Published in Issue

Year 2019 Volume: 40 Number: 3

APA
Ertap, H., Yüksek, M., & Karabulut, M. (2019). Structural and Optical Properties of Indium Selenide (InSe) Thin Films Deposited on Glass and GaSe Single Crystal Substrates by SILAR Method. Cumhuriyet Science Journal, 40(3), 602-611. https://doi.org/10.17776/csj.519415

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