Intersub-band Second Order Nonlinear Transitions in Asymmetric Double Delta-Doped GaAs Structures

Emine Öztürk

doi:10.17776/csj.448219

TR EN

Asimetrik Çift Delta Katkılı GaAs Yapılarında Altbantlar Arası İkinci Derece Doğrusal Olmayan Geçişler

Öz

Bu çalışmada, homojen bir katkılama dağılım modeli için asimetrik çift delta katkılı kuyularda ikinci mertebeden harmonik üretim katsayısı araştırılmıştır. Asimetrik çift delta katkılı kuyulara sahip GaAs yapısının potansiyel profili, alt bant enerji seviyeleri, dalga fonksiyonları ve yük yoğunlukları gibi elektronik özellikleri, Schrödinger ve Poisson denklemlerinin kendi içinde tutarlı hesaplamalarıyla belirlenmiştir. Bu çalışmada kullanılan parametrelere göre, katkı konsantrasyonu için alt bantlar arası gevşeme süresi olan yapıdaki ikinci mertebeden harmonik üretim katsayısının pik değerinin, katkı konsantrasyonu 5 olan yapıdaki süresiyle aynı olduğu görülmektedir. Ayrıca, 1 nm verici dağılımının kalınlığı için, olan bu harmonik üretim katsayısının pik değeri, verici dağılım kalınlığı 8 nm için yaklaşık ile aynı davranışa sahiptir. Alt bantlar arasındaki ikinci derecedeki doğrusal olmayan geçişlerin yapısal parametrelerine bağımlılığı, foto-dedektörlerin ve optik modülatörlerin potansiyel değişimleri için oldukça önemlidir. Kuantum foto-elektronik cihazların gelecekteki araştırmalarında bu yapıların önemli bir yeri olacaktır.

Anahtar Kelimeler

Delta katkılama,öz-uyumluluk,ikinci derece harmonic üretim katsayısı,lineer olmayan geçişler

Intersub-band Second Order Nonlinear Transitions in Asymmetric Double Delta-Doped GaAs Structures

Abstract

In this study, second order harmonic generation (SHG) coefficient in asymmetric double delta doped wells (ADQW) were investigated for a uniform doping distribution model. The electronic properties of GaAs structure with ADQW, such as the potential profile, sub-band energy levels, wave functions and charge densities are calculated by self-consistent the Schrödinger and Poisson equations. According to the parameters used in this study, I have seen that for the doping concentration, SHG peak size in ADQW structure with the intersubband relaxation time gives the same peak magnitude value with for the doping concentration 5. Also, for the thickness of the donor distribution the peak size value of SHG with has approximately the same behavior with for the donor distribution thickness . The dependence on the structural parameters of the nonlinear transitions in the second order between the sub-bands is more important for the potential variations of the photodetectors and optical modulators. These structures will have an important place in the future research of quantum photo-electronic devices.

Keywords

Delta-doping,self-consistent,second order harmonic generation (SHG) coefficient,nonlinear transitions

References

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Details

Primary Language

English

Subjects

-

Journal Section

Research Article

Authors

Emine Öztürk ^*
Türkiye

Publication Date

September 30, 2018

Submission Date

July 26, 2018

Acceptance Date

August 11, 2018

Published in Issue

Year 2018 Volume: 39 Number: 3

DOI

https://doi.org/10.17776/csj.448219

IZ

https://izlik.org/JA26NG68FM

Cite

RIS / Bibtex

APA

Öztürk, E. (2018). Intersub-band Second Order Nonlinear Transitions in Asymmetric Double Delta-Doped GaAs Structures. Cumhuriyet Science Journal, 39(3), 720-727. https://doi.org/10.17776/csj.448219