Optical and Structural Properties of MOCVD Grown InxGa1-xAs Epilayers
Abstract
InxGa1-xAs layers on undoped InP (100) substrates
were grown with Aixtron 200-4
RF/S horizontal Metal Organic Chemical Vapour Deposition (MOCVD)
reactor. All the epilayers have
been grown with different indium compositions. Thickness of the samples were measured via Scanning
Electron Microscopy (SEM). Indium concentrations were defined by High
Resolution X-ray Diffraction (HRXRD) and optical measurements were done with
spectroscopic ellipsometry in order to obtain refractive index (n) and
thickness of the samples. In-situ reflectance is used to measure thickness of
samples. Then all of the thicknesses are compared.
Keywords
References
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Details
Primary Language
English
Subjects
-
Journal Section
Research Article
Publication Date
December 8, 2017
Submission Date
April 5, 2017
Acceptance Date
May 15, 2017
Published in Issue
Year 2017 Volume: 38 Number: 4