A Study on the Growth Conditions Role in Defining InGaAs Epitaxial Layer Quality

Meryem Demir; Sezai Elagöz

doi:10.17776/csj.1441702

EN

A Study on the Growth Conditions Role in Defining InGaAs Epitaxial Layer Quality

Abstract

This study delves into the epitaxial growth and characterization of InxGa1-xAs layers on InP substrate, a critical area in the development of high-performance III-V semiconductor devices. InxGa1-xAs is renowned for its superior electron mobility and broad spectral response, making it indispensable in applications ranging from photodetectors to quantum cascade lasers. Employing a horizontal flow reactor MOVPE (metal-organic vapor phase epitaxy) technique, we meticulously grew n-InxGa1-xAs epilayers under varying conditions to investigate the impact of indium content, growth temperature, and V/III ratio on the material's structural, optical, and electrical properties. HRXRD (High-resolution X-ray diffraction) and Hall-effect measurements provided insights into the correlation between growth parameters and epitaxial layer quality, including dislocation density and carrier mobility. Our findings highlight the delicate balance required in the growth process to optimize the InxGa1-xAs /InP structure's performance for advanced semiconductor applications. The research underscores the potential of tailored InxGa1-xAs layers to push the boundaries of current photonics and optoelectronics technologies, emphasizing the importance of growth condition optimization for enhancing device efficiency and thermal stability.

Keywords

References

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Details

Primary Language

English

Subjects

Material Physics

Journal Section

Research Article

Authors

Meryem Demir ^*
0009-0009-1234-0081
Türkiye

Sezai Elagöz
0000-0002-3600-8640
Türkiye

Publication Date

June 30, 2024

Submission Date

February 22, 2024

Acceptance Date

March 11, 2024

Published in Issue

Year 2024 Volume: 45 Number: 2

DOI

https://doi.org/10.17776/csj.1441702

IZ

https://izlik.org/JA56AC44BU

Cite

RIS / Bibtex

APA

Demir, M., & Elagöz, S. (2024). A Study on the Growth Conditions Role in Defining InGaAs Epitaxial Layer Quality. Cumhuriyet Science Journal, 45(2), 400-406. https://doi.org/10.17776/csj.1441702

AMA

1.Demir M, Elagöz S. A Study on the Growth Conditions Role in Defining InGaAs Epitaxial Layer Quality. CSJ. 2024;45(2):400-406. doi:10.17776/csj.1441702

Chicago

Demir, Meryem, and Sezai Elagöz. 2024. “A Study on the Growth Conditions Role in Defining InGaAs Epitaxial Layer Quality”. Cumhuriyet Science Journal 45 (2): 400-406. https://doi.org/10.17776/csj.1441702.

EndNote

Demir M, Elagöz S (June 1, 2024) A Study on the Growth Conditions Role in Defining InGaAs Epitaxial Layer Quality. Cumhuriyet Science Journal 45 2 400–406.

IEEE

[1]M. Demir and S. Elagöz, “A Study on the Growth Conditions Role in Defining InGaAs Epitaxial Layer Quality”, CSJ, vol. 45, no. 2, pp. 400–406, June 2024, doi: 10.17776/csj.1441702.

ISNAD

Demir, Meryem - Elagöz, Sezai. “A Study on the Growth Conditions Role in Defining InGaAs Epitaxial Layer Quality”. Cumhuriyet Science Journal 45/2 (June 1, 2024): 400-406. https://doi.org/10.17776/csj.1441702.

JAMA

1.Demir M, Elagöz S. A Study on the Growth Conditions Role in Defining InGaAs Epitaxial Layer Quality. CSJ. 2024;45:400–406.

MLA

Demir, Meryem, and Sezai Elagöz. “A Study on the Growth Conditions Role in Defining InGaAs Epitaxial Layer Quality”. Cumhuriyet Science Journal, vol. 45, no. 2, June 2024, pp. 400-6, doi:10.17776/csj.1441702.

Vancouver

1.Meryem Demir, Sezai Elagöz. A Study on the Growth Conditions Role in Defining InGaAs Epitaxial Layer Quality. CSJ. 2024 Jun. 1;45(2):400-6. doi:10.17776/csj.1441702

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