Mosaic Defect and AFM Study on GaN/AlInN/AlN/Sapphire HEMT Structures

Ahmet Kursat Bılgılı; Erkan Hekin; Mustafa Ozturk; Süleyman Özçelik; Ekmel Özbay

doi:10.2339/politeknik.787700

Araştırma Makalesi

Mosaic Defect and AFM Study on GaN/AlInN/AlN/Sapphire HEMT Structures

Yıl 2022, Cilt: 25 Sayı: 4, 1613 - 1619, 16.12.2022

Ahmet Kursat Bılgılı Erkan Hekin Mustafa Ozturk Süleyman Özçelik Ekmel Özbay

https://doi.org/10.2339/politeknik.787700

Öz

In this study, three samples of GaN/AlInN/AlN/Al2O3 high electron mobility (HEMT) structures are investigated with high resolution X-ray diffraction (HR-XRD) technique. Peak positions and peak broadenings are used in calculations, gained from rocking curves. Structural quality is determined from symmetric and asymmetric peak planes. Mosaic defects such as treadening dilocations (TDs), tilt and twist angles, lateral and vertical crystallite lengths are determined by using Williamson Hall (WH) method. In addition to these, surface morphology is also investigated by atomic force microscopy (AFM). It is noticed that crystal quality of epitaxial layers decrease in the order of samples C, B and A. Al compositions for samples A, B and C are found as %87.4, %86.6 and %86.4, respectively by using Vegard’s law.

Anahtar Kelimeler

GaN, AlInN, AlN, sapphire, HEMT

Destekleyen Kurum

Presidency Strategy and Budget Directorate

Proje Numarası

2016K121220

Teşekkür

This work was supported by Presidency Strategy and Budget Directorate (Grant Number: 2016K121220).

Kaynakça

[1] Vickers M. E., Kappers M. J., Datta R., McAleese C., Smeeton T. M., Rayment F., Humphreys C. J., “In-plane imperfections in GaN studied by x-ray diffraction”, J. Phys. D: Appl. Phys. 38, A99, (2005).
[2] Awual R., Asiri M., Rahman M., Alharthi H., “Assessment of enhanced nitrite removal and monitoring using ligand modified stable conjugate materials”, Chemical Engineering Journal, 363: 64-72.
[3] Zheng H., Chen H., Yan Z., Han Y., Yu H., Li D., Huang Q., Zhou J., “Determination of twist angle of in-plane mosaic spread of GaN films by high-resolution X-ray diffraction”, J. Cryst. Growth 255, 63 (2003).
[4] Xing H., Keller S., Wu Y. F., McCarthy L., Smorchkova I. P., Buttari D.,Coffie R., Green D. S., Parish G., Heikman S., Shen L., Zhang N., Xu J. J., Keller B. P., DenBaars S. P., Mishra U. K., “Gallium nitride based transistors”, J. Phys. Cond. Matt.,13: 7139-7157 (2001).
[5] Dunn C. G., Koch E. F., “Comparison of dislocation densities of primary and secondary recrystallization grains of Si-Fe”, Acta Metall. 5: 548 (1957).
[6] Heikman S., Keller S., Wu Y., Speck J., DenBaars P., Mishra K., “Polarization effects in AlGaN/GaN and GaN/AlGaN/GaN heterostructures”, Journal of Applied Physics 93, 10114.
[7] Çörekçi, S. Öztürk M. K., Bengi A., Çakmak M., Özçelik S., Özbay E., “Characterization of an AlN buffer layer and a thick-GaN layer grown on sapphire substrate by MOCVD”, J. Mater. Sci. DOI 10.1007/s10853-010-4973-7, (2010).
[8] S. Çörekçi., M. K. Öztürk., B. Akaoğlu., M. Çakmak., S. Özçelik., E. Özbay., “Structural, morphological, and optical properties of AlGaN/GaN heterostructures with AlN buffer and interlayer”, J. Appl. Phys. 101, 123502, (2007).
[9] Çörekçi S., Usanmaz D., Tekeli Z., Çakmak M., Özçelik S., Özbay E., “Surface Morphology of Al0.3Ga0.7N/Al2O3-High Electron Mobility Transistor Structure”, J. Nanoscience and Nanotechnology. 8, 640-644, (2008).
[10] Ungár T., “Microstructural parameters from X-ray diffraction peak broadening”, Scripta Materialia, Volume 51, Issue 8, 2004, Pages 777-781,(2004).
[11] Nakamura N., Furuta K., Shen X., Kitamura T., Nakamura K., Okumura H., “Electrical properties of MBE-grown AlGaN/GaN HEMT structures by using 4H-SiC (0 0 0 1) vicinal substrates”, Journal of Crystal Growth 301–302 452–456, (2007).
[12] Mahanty S., Hao M., Sugahara T., Fareed Q., Morishima Y., Naoi Y., Wang T., Sakai S., “V-shaped defects in InGaN/GaN multiquantum wells”, Materials Letters 41, 67–71, (1999).
[13] Kapolnek D., Wu X., Heying B., Keller S., Mishra U., DenBaars S., Speck J., “ Structural evolution in epitaxial metalorganic chemical vapor deposition grown GaN films on sapphire”, Appl. Phys. Lett. 67:1541-1543, (1995).

GaN/AlInN/AlN/Safir HEMT Yapılar için Mozaik Kusur ve AFM Çalışması

Yıl 2022, Cilt: 25 Sayı: 4, 1613 - 1619, 16.12.2022

Ahmet Kursat Bılgılı Erkan Hekin Mustafa Ozturk Süleyman Özçelik Ekmel Özbay

https://doi.org/10.2339/politeknik.787700

Öz

Bu çalışmada GaN/AlInN/AlN/Al2O3 yüksek elektron mobiliteli transistör (HEMT) yapıları üç numune olacak şekilde, yüksek çözünürlüklü X-ışınları kırınımı (HR-XRD) tekniği ile incelendi. Hesaplamalarda roking eğrilerinden elde edilen pik pozisyonları ve pik genişlemeleri kullanıldı. Yapısal kalite simetrik ve asimetrik pik düzlemlerinden faydalanılarak belirlendi. Tedirgin edici dislokasyonlar (TDs), eğim ve burkulma açıları, yanal ve düşey kristal uzunlukları gibi mozaik kusurlar Wiiliamson Hall (WH) metodu kullanılarak saptandı. Bunlara ilave olarak, yüzey morfolojisi atomik kuvvet mikroskopisi (AFM) yöntemiyle belirlendi. Epitaksiyel tabakaların kristal kalitesinin örnek C, B ve A sırasına göre düştüğü farkedildi. Örnekler A, B ve C için Al kompozisyonlarının sırasıyla %87.4, %86.6 ve %86.4 olduğu Vegard yasası kullanılarak belirlendi.

Anahtar Kelimeler

GaN, AlInN, AlN, HEMT, safir

Proje Numarası

2016K121220

Kaynakça

[1] Vickers M. E., Kappers M. J., Datta R., McAleese C., Smeeton T. M., Rayment F., Humphreys C. J., “In-plane imperfections in GaN studied by x-ray diffraction”, J. Phys. D: Appl. Phys. 38, A99, (2005).
[2] Awual R., Asiri M., Rahman M., Alharthi H., “Assessment of enhanced nitrite removal and monitoring using ligand modified stable conjugate materials”, Chemical Engineering Journal, 363: 64-72.
[3] Zheng H., Chen H., Yan Z., Han Y., Yu H., Li D., Huang Q., Zhou J., “Determination of twist angle of in-plane mosaic spread of GaN films by high-resolution X-ray diffraction”, J. Cryst. Growth 255, 63 (2003).
[4] Xing H., Keller S., Wu Y. F., McCarthy L., Smorchkova I. P., Buttari D.,Coffie R., Green D. S., Parish G., Heikman S., Shen L., Zhang N., Xu J. J., Keller B. P., DenBaars S. P., Mishra U. K., “Gallium nitride based transistors”, J. Phys. Cond. Matt.,13: 7139-7157 (2001).
[5] Dunn C. G., Koch E. F., “Comparison of dislocation densities of primary and secondary recrystallization grains of Si-Fe”, Acta Metall. 5: 548 (1957).
[6] Heikman S., Keller S., Wu Y., Speck J., DenBaars P., Mishra K., “Polarization effects in AlGaN/GaN and GaN/AlGaN/GaN heterostructures”, Journal of Applied Physics 93, 10114.
[7] Çörekçi, S. Öztürk M. K., Bengi A., Çakmak M., Özçelik S., Özbay E., “Characterization of an AlN buffer layer and a thick-GaN layer grown on sapphire substrate by MOCVD”, J. Mater. Sci. DOI 10.1007/s10853-010-4973-7, (2010).
[8] S. Çörekçi., M. K. Öztürk., B. Akaoğlu., M. Çakmak., S. Özçelik., E. Özbay., “Structural, morphological, and optical properties of AlGaN/GaN heterostructures with AlN buffer and interlayer”, J. Appl. Phys. 101, 123502, (2007).
[9] Çörekçi S., Usanmaz D., Tekeli Z., Çakmak M., Özçelik S., Özbay E., “Surface Morphology of Al0.3Ga0.7N/Al2O3-High Electron Mobility Transistor Structure”, J. Nanoscience and Nanotechnology. 8, 640-644, (2008).
[10] Ungár T., “Microstructural parameters from X-ray diffraction peak broadening”, Scripta Materialia, Volume 51, Issue 8, 2004, Pages 777-781,(2004).
[11] Nakamura N., Furuta K., Shen X., Kitamura T., Nakamura K., Okumura H., “Electrical properties of MBE-grown AlGaN/GaN HEMT structures by using 4H-SiC (0 0 0 1) vicinal substrates”, Journal of Crystal Growth 301–302 452–456, (2007).
[12] Mahanty S., Hao M., Sugahara T., Fareed Q., Morishima Y., Naoi Y., Wang T., Sakai S., “V-shaped defects in InGaN/GaN multiquantum wells”, Materials Letters 41, 67–71, (1999).
[13] Kapolnek D., Wu X., Heying B., Keller S., Mishra U., DenBaars S., Speck J., “ Structural evolution in epitaxial metalorganic chemical vapor deposition grown GaN films on sapphire”, Appl. Phys. Lett. 67:1541-1543, (1995).

Toplam 13 adet kaynakça vardır.

Ayrıntılar

Birincil Dil	İngilizce
Konular	Mühendislik
Bölüm	Araştırma Makalesi
Yazarlar	Ahmet Kursat Bılgılı 0000-0003-3420-4936 Erkan Hekin Bu kişi benim 0000-0003-1661-3234 Mustafa Ozturk 0000-0002-8508-5714 Süleyman Özçelik 0000-0002-3761-3711 Ekmel Özbay 0000-0003-2953-1828
Proje Numarası	2016K121220
Yayımlanma Tarihi	16 Aralık 2022
Gönderilme Tarihi	29 Ağustos 2020
Yayımlandığı Sayı	Yıl 2022 Cilt: 25 Sayı: 4

Kaynak Göster

APA	Bılgılı, A. K., Hekin, E., Ozturk, M., Özçelik, S., vd. (2022). Mosaic Defect and AFM Study on GaN/AlInN/AlN/Sapphire HEMT Structures. Politeknik Dergisi, 25(4), 1613-1619. https://doi.org/10.2339/politeknik.787700
AMA	Bılgılı AK, Hekin E, Ozturk M, Özçelik S, Özbay E. Mosaic Defect and AFM Study on GaN/AlInN/AlN/Sapphire HEMT Structures. Politeknik Dergisi. Aralık 2022;25(4):1613-1619. doi:10.2339/politeknik.787700
Chicago	Bılgılı, Ahmet Kursat, Erkan Hekin, Mustafa Ozturk, Süleyman Özçelik, ve Ekmel Özbay. “Mosaic Defect and AFM Study on GaN/AlInN/AlN/Sapphire HEMT Structures”. Politeknik Dergisi 25, sy. 4 (Aralık 2022): 1613-19. https://doi.org/10.2339/politeknik.787700.
EndNote	Bılgılı AK, Hekin E, Ozturk M, Özçelik S, Özbay E (01 Aralık 2022) Mosaic Defect and AFM Study on GaN/AlInN/AlN/Sapphire HEMT Structures. Politeknik Dergisi 25 4 1613–1619.
IEEE	A. K. Bılgılı, E. Hekin, M. Ozturk, S. Özçelik, ve E. Özbay, “Mosaic Defect and AFM Study on GaN/AlInN/AlN/Sapphire HEMT Structures”, Politeknik Dergisi, c. 25, sy. 4, ss. 1613–1619, 2022, doi: 10.2339/politeknik.787700.
ISNAD	Bılgılı, Ahmet Kursat vd. “Mosaic Defect and AFM Study on GaN/AlInN/AlN/Sapphire HEMT Structures”. Politeknik Dergisi 25/4 (Aralık 2022), 1613-1619. https://doi.org/10.2339/politeknik.787700.
JAMA	Bılgılı AK, Hekin E, Ozturk M, Özçelik S, Özbay E. Mosaic Defect and AFM Study on GaN/AlInN/AlN/Sapphire HEMT Structures. Politeknik Dergisi. 2022;25:1613–1619.
MLA	Bılgılı, Ahmet Kursat vd. “Mosaic Defect and AFM Study on GaN/AlInN/AlN/Sapphire HEMT Structures”. Politeknik Dergisi, c. 25, sy. 4, 2022, ss. 1613-9, doi:10.2339/politeknik.787700.
Vancouver	Bılgılı AK, Hekin E, Ozturk M, Özçelik S, Özbay E. Mosaic Defect and AFM Study on GaN/AlInN/AlN/Sapphire HEMT Structures. Politeknik Dergisi. 2022;25(4):1613-9.