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Al 0.3 Ga 0.7 N/GaN HEMT Yapısı için QMSA Metodu Uygulanması

Yıl 2023, Cilt: 13 Sayı: 4, 1377 - 1385, 15.12.2023

Ahmet Bilgili Ömer Akpınar Naki Kaya Mustafa Öztürk

https://doi.org/10.31466/kfbd.1276114

Öz

Bu çalışmada, Al0.3Ga0.7N/GaN yüksek elektron mobiliteli transistör (HEMT) yapısı, metal-organik buhar fazlı epitaksi (MOVPE) kullanılarak safir (Al2O3) bir alttaş üzerinde büyütülmüş, elektron taşıma ve manyetik taşıma özellikleri incelenmiştir. Özdirenç 20-350 K sıcaklık aralığında ölçülmüştür. Hall hareketliliği ve Hall taşıyıcı konsantrasyonu, 0-1,5 T manyetik alan aralığında ve aynı sıcaklık aralığında ölçülmüştür. Manyetik taşıma özellikleri, kantitatif hareketlilik spektrum analizi (QMSA) kullanılarak analiz edilmiştir. 2DEG ve 3DEG taşıma mekanizmaları QMSA sonuçları ile birbirinden ayrılmıştır.

Anahtar Kelimeler

GaN HEMT AlGaN QMSA Hall Mobilite

Proje Numarası

2016 K121220

Kaynakça

  • H. M. Milchberg, R. R. Freeman, S. C. Davey, and R. M. More. (1988). Resistivity of a Simple Metal from Room Temperature to 106 K. Phys. Rev. Lett. 61, 2364
  • Bulbul, M. M., Smith, S. R. P., Obradovic, B., Cheng, T. S. And Foxon, C. T., (2000). Raman spectroscopy of optical phonons as a probe of GaN epitaxial layer structural quality. Eur. Phys. J. B, 14(3), 423-429.
  • Erol, M., (2000). Temperature dependence of transport characteristics of wurtzite GaN epilayers. Czech. J. Phys., 50(5), 665-670.
  • Bulutay, C., Ridley, B. K. And Zakhleniuk, N. A., (2000). Comparative analysis of zinc-blende and wurtzite GaN for full-band polar optical phonon scattering and negative differential conductivity. Appl. Phys. Lett., 77(17), 2707-2709.
  • Bulutay, C., Ridley, B. K. And Zakhleniuk, N. A., (2000). Full-band polar optical phonon scattering analysis and negative differential conductivity in wurtzite GaN. Phys. Rev. B, 62(23), 15754-15763.
  • Gokden, S., (2007). The analysis of scattering mechanisms in GaN by relaxation time approximation and the comparison by the transport to quantum scattering time ratios. Eur. Phys. J. -Appl. Phys., 38(2), 141-145.
  • Yu, H., Ozturk, M. K., Ozcelik, S. And Ozbay, E., (2006). A study of semi-insulating GaN grown on AlN buffer/sapphire substrate by metalorganic chemical vapor deposition. J. Cryst. Growth, 293(2), 273-277.
  • Ozbay, E., Biyikli, N., Kimukin, I., Kartaloglu, T., Tut, T. And Aytur, O., (2004). High-performance solar-blind photodetectors based on AlxGa1-xN heterostructures. IEEE J. Selected Topics Quant. Electron., 10(4), 742-751.
  • Zanato, D., Gokden, S., Balkan, N., Ridley, B. K. And Schaff, W. J., (2004). The effect of interface-roughness and dislocation scattering on low temperature mobility of 2D electron gas in GaN/AlGaN. Semicond. Sci. Technol., 19(3), 427-432.
  • Balkan, N., Arikan, M. C., Gokden, S., Tilak, V., Schaff, B. And Shealy, R. J., (2002). Energy and momentum relaxation of hot electrons in GaN/AlGaN. J. Phys – Condens. Matter, 14(13), 3457-3468.
  • Lee, S. Y., Cetiner, B. A., Torpi, H., Cai, S. J., Li, J., Alt, K., Chen, Y. L., Wen, C. P., Wang, K. L. And Itoh, T., (2001). An X-band GaN HEMT power amplifier design using an artificial neural network modeling technique. IEEE Trans. Electron. Dev., 48(3), 495-501.
  • Feng, Z. H., Zhou, Y. G., Cai, S. J. And Lau, K. M., (2004). Enhanced thermal stability of the two-dimensional electron gas in GaN/AlGaN/GaN heterostructures by Si3N4 surface-passivation-induced strain solidification. Appl. Phys. Lett., 85(22), 5248-5250.
  • Xing, H., Keller, S., Wu, Y. –F., McCarthy, L., Smorchkova, I. P., Buttari, D., Coffie, R., Green, D. S., Parish, G., Heikman, S., Shen, L., Zhang, N., Xu, J. J., Keller, B. P., DenBaars, S. P. And Mishra, U. K., (2001). Gallium nitride based transistors. J. Phys. -Condens. Matter, 13(32), 7139-7158.
  • Shen, L., Heikman, S., Moran, B., Coffie, R., Zhang, N. –Q., Buttari, D., Smorchkova, I. P., Keller, S., DenBaars, S. P. And Mishra, U. K., (2001). AlGaN/AlN/GaN high-power microwave HEMT. IEEE Electr. Device Lett., 22(10), 457-459.
  • Balmer, R. S., Hilton, K. P., Nash, K. J., Uren, M. J., Wallis, D. J., Wells, A., Missous, M. And Martin, T., (2003). AlGaN/GaN microwave HFET including a thin AlN carrier exclusion layer. Phys. Stat. Sol. (c), 0(7): 2331-2334.
  • Smorchkova, I. P., Keller, S., Heikman, S., Elsass, C. R., Heying, B., Fini, P.,Speck, J. S. And Mishra, U. K., (2000). Two-dimensional electron-gas AlN/GaN heterostructures with extremely thin AlN barriers. Appl. Phys. Lett., 77(24), 3998-4000.

Application of QMSA Method for Al 0.3 Ga 0.7 N/GaN HEMT Structure

Yıl 2023, Cilt: 13 Sayı: 4, 1377 - 1385, 15.12.2023

Ahmet Bilgili Ömer Akpınar Naki Kaya Mustafa Öztürk

https://doi.org/10.31466/kfbd.1276114

Öz

In this study, Al 0.3 Ga 0.7 N/GaN high electron mobility transistor (HEMT) structure is grown on a sapphire (Al2O3) substrate by using metal-organic vapor phase epitaxy (MOVPE), and its electron transport and magnetic transport properties are investigated. Resistivity is measured in the 20-350 K temperature range. Hall mobility and Hall carrier concentration are measured in the 0-1.5 T magnetic field range and the same temperature range. Magnetic transport properties are analyzed using quantitative mobility spectrum analysis (QMSA). 2DEG and 3DEG transport mechanisms are separated by using QMSA results.

Anahtar Kelimeler

GaN HEMT AlGaN QMSA Hall Mobility

Destekleyen Kurum

Presidency Strategy and Budget Directorate

Proje Numarası

2016 K121220

Teşekkür

We thank the Presidency Strategy and Budget Directorate for supporting this work.

Kaynakça

  • H. M. Milchberg, R. R. Freeman, S. C. Davey, and R. M. More. (1988). Resistivity of a Simple Metal from Room Temperature to 106 K. Phys. Rev. Lett. 61, 2364
  • Bulbul, M. M., Smith, S. R. P., Obradovic, B., Cheng, T. S. And Foxon, C. T., (2000). Raman spectroscopy of optical phonons as a probe of GaN epitaxial layer structural quality. Eur. Phys. J. B, 14(3), 423-429.
  • Erol, M., (2000). Temperature dependence of transport characteristics of wurtzite GaN epilayers. Czech. J. Phys., 50(5), 665-670.
  • Bulutay, C., Ridley, B. K. And Zakhleniuk, N. A., (2000). Comparative analysis of zinc-blende and wurtzite GaN for full-band polar optical phonon scattering and negative differential conductivity. Appl. Phys. Lett., 77(17), 2707-2709.
  • Bulutay, C., Ridley, B. K. And Zakhleniuk, N. A., (2000). Full-band polar optical phonon scattering analysis and negative differential conductivity in wurtzite GaN. Phys. Rev. B, 62(23), 15754-15763.
  • Gokden, S., (2007). The analysis of scattering mechanisms in GaN by relaxation time approximation and the comparison by the transport to quantum scattering time ratios. Eur. Phys. J. -Appl. Phys., 38(2), 141-145.
  • Yu, H., Ozturk, M. K., Ozcelik, S. And Ozbay, E., (2006). A study of semi-insulating GaN grown on AlN buffer/sapphire substrate by metalorganic chemical vapor deposition. J. Cryst. Growth, 293(2), 273-277.
  • Ozbay, E., Biyikli, N., Kimukin, I., Kartaloglu, T., Tut, T. And Aytur, O., (2004). High-performance solar-blind photodetectors based on AlxGa1-xN heterostructures. IEEE J. Selected Topics Quant. Electron., 10(4), 742-751.
  • Zanato, D., Gokden, S., Balkan, N., Ridley, B. K. And Schaff, W. J., (2004). The effect of interface-roughness and dislocation scattering on low temperature mobility of 2D electron gas in GaN/AlGaN. Semicond. Sci. Technol., 19(3), 427-432.
  • Balkan, N., Arikan, M. C., Gokden, S., Tilak, V., Schaff, B. And Shealy, R. J., (2002). Energy and momentum relaxation of hot electrons in GaN/AlGaN. J. Phys – Condens. Matter, 14(13), 3457-3468.
  • Lee, S. Y., Cetiner, B. A., Torpi, H., Cai, S. J., Li, J., Alt, K., Chen, Y. L., Wen, C. P., Wang, K. L. And Itoh, T., (2001). An X-band GaN HEMT power amplifier design using an artificial neural network modeling technique. IEEE Trans. Electron. Dev., 48(3), 495-501.
  • Feng, Z. H., Zhou, Y. G., Cai, S. J. And Lau, K. M., (2004). Enhanced thermal stability of the two-dimensional electron gas in GaN/AlGaN/GaN heterostructures by Si3N4 surface-passivation-induced strain solidification. Appl. Phys. Lett., 85(22), 5248-5250.
  • Xing, H., Keller, S., Wu, Y. –F., McCarthy, L., Smorchkova, I. P., Buttari, D., Coffie, R., Green, D. S., Parish, G., Heikman, S., Shen, L., Zhang, N., Xu, J. J., Keller, B. P., DenBaars, S. P. And Mishra, U. K., (2001). Gallium nitride based transistors. J. Phys. -Condens. Matter, 13(32), 7139-7158.
  • Shen, L., Heikman, S., Moran, B., Coffie, R., Zhang, N. –Q., Buttari, D., Smorchkova, I. P., Keller, S., DenBaars, S. P. And Mishra, U. K., (2001). AlGaN/AlN/GaN high-power microwave HEMT. IEEE Electr. Device Lett., 22(10), 457-459.
  • Balmer, R. S., Hilton, K. P., Nash, K. J., Uren, M. J., Wallis, D. J., Wells, A., Missous, M. And Martin, T., (2003). AlGaN/GaN microwave HFET including a thin AlN carrier exclusion layer. Phys. Stat. Sol. (c), 0(7): 2331-2334.
  • Smorchkova, I. P., Keller, S., Heikman, S., Elsass, C. R., Heying, B., Fini, P.,Speck, J. S. And Mishra, U. K., (2000). Two-dimensional electron-gas AlN/GaN heterostructures with extremely thin AlN barriers. Appl. Phys. Lett., 77(24), 3998-4000.
Toplam 16 adet kaynakça vardır.

Ayrıntılar

Birincil Dil İngilizce
Konular Elektrik Mühendisliği
Bölüm Makaleler
Yazarlar

Ahmet Bilgili 0000-0003-3420-4936

Ömer Akpınar 0000-0002-5172-8283

Naki Kaya 0000-0003-2287-676X

Mustafa Öztürk 0000-0002-8508-5714

Proje Numarası 2016 K121220
Erken Görünüm Tarihi 18 Aralık 2023
Yayımlanma Tarihi 15 Aralık 2023
Yayımlandığı Sayı Yıl 2023 Cilt: 13 Sayı: 4

Kaynak Göster

APA Bilgili, A., Akpınar, Ö., Kaya, N., Öztürk, M. (2023). Application of QMSA Method for Al 0.3 Ga 0.7 N/GaN HEMT Structure. Karadeniz Fen Bilimleri Dergisi, 13(4), 1377-1385. https://doi.org/10.31466/kfbd.1276114
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