Research Article
Year 2020,
Volume: 41 Issue: 3, 565 - 570, 30.09.2020
Abstract
Supporting Institution
Sivas Cumhuriyet University
Project Number
M-679
References
- Zhao G. J., Liang X. X., Ban S. L., Binding energies of donors in quantum wells under hydrostatic pressure, Phys. Lett. A, 319 (2003) 191-197.
- Ozturk E., Simultaneous effects of the intense laser field and the electric field on the nonlinear optical properties in GaAs/GaAlAs quantum well, Opt. Commun., 332 (2014) 136-143.
- Raigoza N., Morales A. L., Duque C. A., Effects of hydrostatic pressure on donor states in symmetrical GaAs-Ga0.7Al0.3As double quantum wells, Physica B, 363 (2005) 262-270.
- Peter A. J., Navaneethakrishnan K., Simultaneous effects of pressure and temperature on donors in a GaAlAs/GaAs quantum well, Superlattice Microst., 43 (2008) 63-71.
- Ozturk E., Sokmen I., Nonlinear intersubband absorption and refractive index changes in square and graded quantum well modulated by temperature and hydrostatic pressure, J. Lumin., 134 (2013) 42-48.
- Kasapoglu E., Duque C. A., Mora-Ramos M. E., Restrepo R. L., Ungan F., Yesilgul U., Sari H., Sokmen I., Combined effects of intense laser field, electric and magnetic fields on the nonlinear optical properties of the step-like quantum well, Materials Chemistry and Physic, 154 (2015) 170-175.
- de la Cruz G. G., The influence of surface segregation on the optical properties of quantum wells, J. Appl. Phys., 96 (2004) 3752-3755.
- Martini S., Quivy A. A., Lamas T. E., da Silva E. C. F., Real-time RHEED investigation of indium segregation in InGaAs layers grown on vicinal GaAs(001) substrates, Phys. Rev. B , 72 (2005) 153304-153307
- Wu S., Huang Z., Liu Y., Huang Q., Guo W., Cao Y., The effects of indium segregation on the valence band structure and optical gain of GaInAs/GaAs quantum wells, Physica E, 41 (2009) 1656-1660.
- Ozturk E., Electric and intense laser field effect on the electronic properties of Ga1-xAlxAs/GaAs and Ga1-xInxAs/GaAs semi-parabolic quantum wells, Laser Physics, 26 (2016) 096102-096110.
- Baser P., Altuntas I., Elagoz S., The hydrostatic pressure and temperature effects on hydrogenic impurity binding energies in GaAs/InxGa1-xAs/ GaAs square quantum well, Superlattice, Microst., 92 (2016) 210-216.
- Fukuta, S., Goto, H., Sawaki, N., Suzuki, T., Ito, H., & Hara, K., Modulation of optical spectra in an asymmetric triple quantum well structure. Semiconductor Science and Technology, 8(10) (1993) 1881–1884.
- Hernández‐Cabrera A., Valance-band mixing effect on exciton dipole terahertz emission from asymmetric triple quantum wells, J. Appl. Phys., 80 (3) (1996) 1547-1552.
- Alaydin B. O., Ozturk E., Elagoz S., Interband transitions dependent on indium concentration in Ga1-xInxAs/GaAs asymmetric triple quantum wells, International Journal of Modern Physics B, 32 (5) (2018) 18550052-1855067.
- Ozturk O., Ozturk E., Elagoz S., Linear and nonlinear optical absorption coefficient and electronic features of triple GaAlAs/GaAs and GaInAs/GaAs quantum wells depending on barrier widths, Optik, 180 (2019) 394-405.
- Zorry P. S. Jr., Quantum well lasers, Academic Press, Boston: 1993; p.79.
- Niculescu E.C., Eseanu N., Spandonide A., Laser field effects on the interband transitions in differently shaped quantum wells, U.P.B. Sci. Bull., Series A, 77 (4) (2015) 281-292
- Ochalski T.J., Zuk J., Reginski K., Bugajski M., Photoreflectance studies of InGaAs/GaAs/AlGaAs single quantum well laser structures, Acta Physica Polonica A, 94 (1998) 463-467.
Electronic characteristics of asymmetric triple GaAlAs/GaAs and GaInAs/GaAs quantum wells depending on Al and In concentration
Abstract
Herein, the electronic characteristics of asymmetric triple Ga1-x Alx As/GaAs quantum wells (A model) and Ga1-x Inx As/GaAs quantum wells (B model) have been examined as dependent on Al and In concentration. The energy levels, the wave functions and the finding probability of electron in quantum well (QW) of these systems under effective mass approach were concluded by Schrödinger equation solution. According to our results, the main differences between models A and B are effective mass and energy gap. For A model, GaAlAs is the barrier and GaAs is the well. Whereas for B model, GaAs is the barrier and GaInAs is the well. Also, the energy levels and the potential height of B model are unceasingly higher than of B model. The concentration ratio has a great impact on the electronic features of the asymmetric triple quantum well (ATQW). These features have a convenient attention for the purpose of adjustable semiconductor devices.
Keywords
Asymmetric triple GaAlAs/GaAs quantum well Asymmetric triple GaInAs/GaAs quantum well Concentration ratio Electronic characteristics
Project Number
M-679
References
- Zhao G. J., Liang X. X., Ban S. L., Binding energies of donors in quantum wells under hydrostatic pressure, Phys. Lett. A, 319 (2003) 191-197.
- Ozturk E., Simultaneous effects of the intense laser field and the electric field on the nonlinear optical properties in GaAs/GaAlAs quantum well, Opt. Commun., 332 (2014) 136-143.
- Raigoza N., Morales A. L., Duque C. A., Effects of hydrostatic pressure on donor states in symmetrical GaAs-Ga0.7Al0.3As double quantum wells, Physica B, 363 (2005) 262-270.
- Peter A. J., Navaneethakrishnan K., Simultaneous effects of pressure and temperature on donors in a GaAlAs/GaAs quantum well, Superlattice Microst., 43 (2008) 63-71.
- Ozturk E., Sokmen I., Nonlinear intersubband absorption and refractive index changes in square and graded quantum well modulated by temperature and hydrostatic pressure, J. Lumin., 134 (2013) 42-48.
- Kasapoglu E., Duque C. A., Mora-Ramos M. E., Restrepo R. L., Ungan F., Yesilgul U., Sari H., Sokmen I., Combined effects of intense laser field, electric and magnetic fields on the nonlinear optical properties of the step-like quantum well, Materials Chemistry and Physic, 154 (2015) 170-175.
- de la Cruz G. G., The influence of surface segregation on the optical properties of quantum wells, J. Appl. Phys., 96 (2004) 3752-3755.
- Martini S., Quivy A. A., Lamas T. E., da Silva E. C. F., Real-time RHEED investigation of indium segregation in InGaAs layers grown on vicinal GaAs(001) substrates, Phys. Rev. B , 72 (2005) 153304-153307
- Wu S., Huang Z., Liu Y., Huang Q., Guo W., Cao Y., The effects of indium segregation on the valence band structure and optical gain of GaInAs/GaAs quantum wells, Physica E, 41 (2009) 1656-1660.
- Ozturk E., Electric and intense laser field effect on the electronic properties of Ga1-xAlxAs/GaAs and Ga1-xInxAs/GaAs semi-parabolic quantum wells, Laser Physics, 26 (2016) 096102-096110.
- Baser P., Altuntas I., Elagoz S., The hydrostatic pressure and temperature effects on hydrogenic impurity binding energies in GaAs/InxGa1-xAs/ GaAs square quantum well, Superlattice, Microst., 92 (2016) 210-216.
- Fukuta, S., Goto, H., Sawaki, N., Suzuki, T., Ito, H., & Hara, K., Modulation of optical spectra in an asymmetric triple quantum well structure. Semiconductor Science and Technology, 8(10) (1993) 1881–1884.
- Hernández‐Cabrera A., Valance-band mixing effect on exciton dipole terahertz emission from asymmetric triple quantum wells, J. Appl. Phys., 80 (3) (1996) 1547-1552.
- Alaydin B. O., Ozturk E., Elagoz S., Interband transitions dependent on indium concentration in Ga1-xInxAs/GaAs asymmetric triple quantum wells, International Journal of Modern Physics B, 32 (5) (2018) 18550052-1855067.
- Ozturk O., Ozturk E., Elagoz S., Linear and nonlinear optical absorption coefficient and electronic features of triple GaAlAs/GaAs and GaInAs/GaAs quantum wells depending on barrier widths, Optik, 180 (2019) 394-405.
- Zorry P. S. Jr., Quantum well lasers, Academic Press, Boston: 1993; p.79.
- Niculescu E.C., Eseanu N., Spandonide A., Laser field effects on the interband transitions in differently shaped quantum wells, U.P.B. Sci. Bull., Series A, 77 (4) (2015) 281-292
- Ochalski T.J., Zuk J., Reginski K., Bugajski M., Photoreflectance studies of InGaAs/GaAs/AlGaAs single quantum well laser structures, Acta Physica Polonica A, 94 (1998) 463-467.
There are 18 citations in total.
Details
| Primary Language | English |
|---|---|
| Journal Section | Natural Sciences |
| Authors | |
| Project Number | M-679 |
| Publication Date | September 30, 2020 |
| Submission Date | November 28, 2019 |
| Acceptance Date | February 19, 2020 |
| Published in Issue | Year 2020Volume: 41 Issue: 3 |