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Yıl 2019, Cilt: 40 Sayı: 3, 602 - 611, 30.09.2019

Hüseyin Ertap Mustafa Yüksek Mevlüt Karabulut

https://doi.org/10.17776/csj.519415
Cited By: 1

Öz

Kaynakça

  • [1] Ertap H., Karabulut M., Structural and electrical properties of boron doped InSe single crystals, Materials Research Express, 6 (2019) 035901.
  • [2] Duman S., Gürbulak B., Doğan S., Türüt A., Electrical characteristics and inhomogeneous barrier analysis of Au–Be/p-InSe: Cd Schottky barrier diodes, Microelectronic Engineering, 86 (2009) 106-110.
  • [3] De Blasi C., Micocci G., Mongelli S., Tepore A., Large InSe single crystals grown from stoichiometric and non-stoichiometric melts, Journal of Crystal Growth, 57(3) (1982) 482-486.
  • [4] Savchyn V. P., Kytsai V. B., Photoelectric properties of heterostructures based on thermo-oxidated GaSe and InSe crystals, Thin Solid Films, 361 (2000) 123-125.
  • [5] Kobbi B., Kesri N., Physico-chemical and electrical properties of InSe films, Vacuum, 75 (2004) 177-182.
  • [6] Ertap H., Mamedov G. M., Karabulut M., Bacıoglu A., Pool–Frenkel thermoelectric modulation of exciton photoluminescence in GaSe crystals, Journal of Luminescence, 13 (2011) 1376-1379.
  • [7] Yüksek M., Ertap H., Elmali A., Yaglioglu H. G., Mamedov G. M., Karabulut M., Özturk M. K., Two photon absorption characteristics of bulk GaTe crystal, Optics& Laser Technology, 44 (2012) 2178-2181.
  • [8] Gamal G. A., Azad M. I., Photoelectric studies of gallium monosulfide single crystals Journal of Phys. Chem. Solids, 66 (2005) 5-10.
  • [9] Ertap H., Bacıoğlu A., Karabulut M., Photoluminescence properties of boron doped InSe single crystals, Journal of Luminescence, 167 (2015) 227-232.
  • [10] Cuculescu E., Evtodiev I., Caraman I., Leontie L., Nedeff V., Rusu D., Transport and generation–recombination mechanisms of nonequilibrium charge carriers in ZnO/In2O3/InSe: Cd heterojunctions, Thin Solid Films, 519 (2011) 7356-7359.
  • [11] Segura A., Chevy A., Guedson J. P., Besson J. M., Photovoltaic efficiency of InSe solar cells, Solar Energy Materials, 2 (1979) 159-165.
  • [12] Pathan H. M., Kulkarni S. S., Mane R. S., Lokhande C. D., Preparation and characterization of indium selenide thin films from a chemical route, Materials Chemistry and Physics, 93 (2005) 16-20.
  • [13] Yüksek M., Nonlinear refraction effects of amorphous semiconductor InSe thin films according to film thicknesses and/or pulse durations, Optic Communications, 285 (2012) 5472-5474.
  • [14] Sen S. S., Biswas N. N., Khan K. A., Temperature effect on the electrical and optical properties of indium-selenide thin-films, Applied Energy, 65 (2000) 51-58.
  • [15] Gopal S., Viswanathan C., Karunagaran B., Narayandass S. K., Mangalaraj D., Yi J., Preparation and characterization of electrodeposited indium selenide thin films, Crystal Research Technology, 40 (2005) 557-562.
  • [16] Matheswaran P., Kumar R. S., Sathyamoorthy R., Effect of annealing on the structural and optical properties of InSe bilayer thin films, Vacuum, 85 (2011) 820-826.
  • [17] Chen X., Hou X., Cao X., Ding X., Chen L., Zhao G., Wang X., Gallium sulfide thin film grown on GaAs (1 0 0) by microwave glow discharge, J. Cryst. Growth, 173 (1997) 51-56.
  • [18] Suh S., Hoffman D. M., Chemical vapor deposition of gallium sulfide thin films, Chemistry of Materials, 12 (2000) 2794-2797.
  • [19] Sanz C., Guillen C., Gutierrez M. T., Influence of the synthesis conditions on gallium sulfide thin films prepared by modulated flux deposition, J. Phys. D: Appl. Phys., 42 (2009) 085108.
  • [20] Guseinov G. D., Ramazanzade A. M., Visualization of dislocations on basal planes of GaSe single crystals, Phys. Stat. Sol. (b), 23 (1967) 461-465.
  • [21] Mamedov G. M., Karabulut M., Ertap H., Kodolbaş O., Öktü Ö., Bacıoğlu A., Exciton photoluminescence, photoconductivity and absorption in GaSe0. 9Te0. 1 alloy crystals, Journal of Luminescence, 129 (2009) 226–230.
  • [22] Mane R. S., Sankapal B. R., Lokhande C. D., A chemical method for the deposition of Bi2S3 thin films from a non-aqueous bath, Thin Solid Films, 359 (2000) 136-140.
  • [23] Lutz, H. Private Communication 1989.
  • [24] Asabe M. R., Chate P. A., Delekar S. D., Garadkar K. M., Mulla I. S., Hankare P. P., Synthesis, characterization of chemically deposited indium selenide thin films at room temperature, Journal of Physics and Chemistry of Solids, 69 (2008) 249-254.
  • [25] Anis M. K., Nazar F. M., X-ray and electron diffraction analysis of GaSe crystals, J. Mater. Sci. Lett., 2 (1983) 471-474.
  • [26] Blasi C. De., Manno D., Rizzo A., Study of the polytypism in melt grown InSe single crystals by convergent beam electron diffraction, Journal of Crystal Growth, 100 (1990) 347-353.
  • [27] Fotsing J., Julien C., Balkanski M., Annealing and doping effects in layered In2Se3 compounds, Material Science and Engineering, B1 (1988) 139-145.
  • [28] Cenzual K., Gelato L. M., Penzo M., Parthe E., Inorganic structure types with revised space groups. I., Acta Crystallographica Section B: Structural Science, 47 (1991) 433-439.
  • [29] Urbach F., The long-wavelength edge of photographic sensitivity and of the electronic absorption of solids, Phys. Rev., 92 (1953) 1324.
  • [30] Mamedov G. M., Karabulut M., Kodolbaş O. A., Öktü Ö., Exciton photoconductivity in Ge‐doped GaSe crystals, Phys. Stat. Sol. (b), 242 (2005) 2885-2891.
  • [31] Ertap H., Baydar T., Yüksek M., Karabulut M., Structural and optical properties of gallium sulfide thin film, Turkish Journal of Physics, 40(3) (2016) 297-303.

Structural and Optical Properties of Indium Selenide (InSe) Thin Films Deposited on Glass and GaSe Single Crystal Substrates by SILAR Method

Yıl 2019, Cilt: 40 Sayı: 3, 602 - 611, 30.09.2019

Hüseyin Ertap Mustafa Yüksek Mevlüt Karabulut

https://doi.org/10.17776/csj.519415
Cited By: 1

Öz

Structural, morphological and
optical properties of undoped and boron doped Indium Selenide (InSe) thin films
grown on glass and layered Gallium Selenide (GaSe) single crystal substrates
with SILAR method have been investigated
by XRD, AFM and UV-Vis spectrophotometer techniques. XRD measurements showed that the crystal structure of InSe thin
films grown on glass substrates were hexagonal P61 γ-In2Se3
with lattice parameters a=7.1286 Å, c=19.382 Å and z=6 while the InSe thin
films grew as hexagonal P63/mmc InSe with lattice parameters a=4.005 Å,
c=16.640 Å and z=4 on GaSe single crystal substrates. The AFM images showed
that average particle sizes of undoped and boron doped InSe thin films were
found to be varying between 26.5-60.2 nm and 30.9-101.5 nm grown on glass and
GaSe single crystal substrates, respectively. The optical absorption spectra of
undoped and boron doped InSe thin films grown on both glass and GaSe single
crystal substrates showed absorption maxima around the 2.00 and 2.24 eV,
respectively. The calculated Urbach energies of the InSe thin films grown on
glass substrates were found bigger than those of the InSe thin films grown on
GaSe single crystal substrates.

Anahtar Kelimeler

Indium Selenide SILAR thin film GaSe single crystal substrate boron

Kaynakça

  • [1] Ertap H., Karabulut M., Structural and electrical properties of boron doped InSe single crystals, Materials Research Express, 6 (2019) 035901.
  • [2] Duman S., Gürbulak B., Doğan S., Türüt A., Electrical characteristics and inhomogeneous barrier analysis of Au–Be/p-InSe: Cd Schottky barrier diodes, Microelectronic Engineering, 86 (2009) 106-110.
  • [3] De Blasi C., Micocci G., Mongelli S., Tepore A., Large InSe single crystals grown from stoichiometric and non-stoichiometric melts, Journal of Crystal Growth, 57(3) (1982) 482-486.
  • [4] Savchyn V. P., Kytsai V. B., Photoelectric properties of heterostructures based on thermo-oxidated GaSe and InSe crystals, Thin Solid Films, 361 (2000) 123-125.
  • [5] Kobbi B., Kesri N., Physico-chemical and electrical properties of InSe films, Vacuum, 75 (2004) 177-182.
  • [6] Ertap H., Mamedov G. M., Karabulut M., Bacıoglu A., Pool–Frenkel thermoelectric modulation of exciton photoluminescence in GaSe crystals, Journal of Luminescence, 13 (2011) 1376-1379.
  • [7] Yüksek M., Ertap H., Elmali A., Yaglioglu H. G., Mamedov G. M., Karabulut M., Özturk M. K., Two photon absorption characteristics of bulk GaTe crystal, Optics& Laser Technology, 44 (2012) 2178-2181.
  • [8] Gamal G. A., Azad M. I., Photoelectric studies of gallium monosulfide single crystals Journal of Phys. Chem. Solids, 66 (2005) 5-10.
  • [9] Ertap H., Bacıoğlu A., Karabulut M., Photoluminescence properties of boron doped InSe single crystals, Journal of Luminescence, 167 (2015) 227-232.
  • [10] Cuculescu E., Evtodiev I., Caraman I., Leontie L., Nedeff V., Rusu D., Transport and generation–recombination mechanisms of nonequilibrium charge carriers in ZnO/In2O3/InSe: Cd heterojunctions, Thin Solid Films, 519 (2011) 7356-7359.
  • [11] Segura A., Chevy A., Guedson J. P., Besson J. M., Photovoltaic efficiency of InSe solar cells, Solar Energy Materials, 2 (1979) 159-165.
  • [12] Pathan H. M., Kulkarni S. S., Mane R. S., Lokhande C. D., Preparation and characterization of indium selenide thin films from a chemical route, Materials Chemistry and Physics, 93 (2005) 16-20.
  • [13] Yüksek M., Nonlinear refraction effects of amorphous semiconductor InSe thin films according to film thicknesses and/or pulse durations, Optic Communications, 285 (2012) 5472-5474.
  • [14] Sen S. S., Biswas N. N., Khan K. A., Temperature effect on the electrical and optical properties of indium-selenide thin-films, Applied Energy, 65 (2000) 51-58.
  • [15] Gopal S., Viswanathan C., Karunagaran B., Narayandass S. K., Mangalaraj D., Yi J., Preparation and characterization of electrodeposited indium selenide thin films, Crystal Research Technology, 40 (2005) 557-562.
  • [16] Matheswaran P., Kumar R. S., Sathyamoorthy R., Effect of annealing on the structural and optical properties of InSe bilayer thin films, Vacuum, 85 (2011) 820-826.
  • [17] Chen X., Hou X., Cao X., Ding X., Chen L., Zhao G., Wang X., Gallium sulfide thin film grown on GaAs (1 0 0) by microwave glow discharge, J. Cryst. Growth, 173 (1997) 51-56.
  • [18] Suh S., Hoffman D. M., Chemical vapor deposition of gallium sulfide thin films, Chemistry of Materials, 12 (2000) 2794-2797.
  • [19] Sanz C., Guillen C., Gutierrez M. T., Influence of the synthesis conditions on gallium sulfide thin films prepared by modulated flux deposition, J. Phys. D: Appl. Phys., 42 (2009) 085108.
  • [20] Guseinov G. D., Ramazanzade A. M., Visualization of dislocations on basal planes of GaSe single crystals, Phys. Stat. Sol. (b), 23 (1967) 461-465.
  • [21] Mamedov G. M., Karabulut M., Ertap H., Kodolbaş O., Öktü Ö., Bacıoğlu A., Exciton photoluminescence, photoconductivity and absorption in GaSe0. 9Te0. 1 alloy crystals, Journal of Luminescence, 129 (2009) 226–230.
  • [22] Mane R. S., Sankapal B. R., Lokhande C. D., A chemical method for the deposition of Bi2S3 thin films from a non-aqueous bath, Thin Solid Films, 359 (2000) 136-140.
  • [23] Lutz, H. Private Communication 1989.
  • [24] Asabe M. R., Chate P. A., Delekar S. D., Garadkar K. M., Mulla I. S., Hankare P. P., Synthesis, characterization of chemically deposited indium selenide thin films at room temperature, Journal of Physics and Chemistry of Solids, 69 (2008) 249-254.
  • [25] Anis M. K., Nazar F. M., X-ray and electron diffraction analysis of GaSe crystals, J. Mater. Sci. Lett., 2 (1983) 471-474.
  • [26] Blasi C. De., Manno D., Rizzo A., Study of the polytypism in melt grown InSe single crystals by convergent beam electron diffraction, Journal of Crystal Growth, 100 (1990) 347-353.
  • [27] Fotsing J., Julien C., Balkanski M., Annealing and doping effects in layered In2Se3 compounds, Material Science and Engineering, B1 (1988) 139-145.
  • [28] Cenzual K., Gelato L. M., Penzo M., Parthe E., Inorganic structure types with revised space groups. I., Acta Crystallographica Section B: Structural Science, 47 (1991) 433-439.
  • [29] Urbach F., The long-wavelength edge of photographic sensitivity and of the electronic absorption of solids, Phys. Rev., 92 (1953) 1324.
  • [30] Mamedov G. M., Karabulut M., Kodolbaş O. A., Öktü Ö., Exciton photoconductivity in Ge‐doped GaSe crystals, Phys. Stat. Sol. (b), 242 (2005) 2885-2891.
  • [31] Ertap H., Baydar T., Yüksek M., Karabulut M., Structural and optical properties of gallium sulfide thin film, Turkish Journal of Physics, 40(3) (2016) 297-303.
Toplam 31 adet kaynakça vardır.

Ayrıntılar

Birincil Dil İngilizce
Bölüm Natural Sciences
Yazarlar

Hüseyin Ertap

Mustafa Yüksek

Mevlüt Karabulut

Yayımlanma Tarihi 30 Eylül 2019
Gönderilme Tarihi 30 Ocak 2019
Kabul Tarihi 19 Ağustos 2019
Yayımlandığı Sayı Yıl 2019Cilt: 40 Sayı: 3

Kaynak Göster

APA Ertap, H., Yüksek, M., & Karabulut, M. (2019). Structural and Optical Properties of Indium Selenide (InSe) Thin Films Deposited on Glass and GaSe Single Crystal Substrates by SILAR Method. Cumhuriyet Science Journal, 40(3), 602-611. https://doi.org/10.17776/csj.519415

Cited By

Recent Advances in the Growth and Characterizations of SILAR-Deposited Thin Films
Applied Sciences
https://doi.org/10.3390/app12168184