Abstract
Gausyen kuantum çift bariyer yapısı, elektrik alan biası yokluğunda ve
varlığında incelenmiştir. Sonlu farklar metodu temelli denge-dışı Green
fonksiyonları yöntemi kullanılmıştır. Rezonans enerji seviyesinin ayrıntılı
analizi ve sistem parametrelerinin önemi tartışılmıştır. İletim özelliklerinin
bariyerlere ve elektrik alan biasına bağımlılığı incelenmiştir. Farklı bariyer
şekillerinin verileri ile bir karşılaştırma sunulmuştur.
References
- [1]. Chang L.L., Mendez E.E., Tejedor C., Resonant Tunneling in Semiconductors Physics and Applications, Springer US, 1991.
- [2]. Harrison P., Quantum Wells, Wires and Dots: Theoretical and Computational Physics of Semiconductor Nanostructures, 3rd ed. Wiley, 2010.
- [3]. Levi A.F.J., Applied Quantum Mechanics, 1st ed. Cambridge: Cambridge University Press, 2006.
- [4]. Ohmukai M., Triangular double barrier resonant tunneling, Mater. Sci. and Eng. B, 116 (2005) 87-90.
- [5]. Shokri A., Electrical transport engineering of semiconductor superlattice structures, Physica B, 438 (2014) 13-16.
- [6]. Jiang H., Cai W., Tsu R., Accuracy of the Frensley inflow boundary condition for Wigner equations in simulating resonant tunneling diodes, J. of Comp. Phys. 230 (2011) 2031-2044.
- [7]. Datta S., Quantum Transport: Atom to transistor, Cambridge: Cambridge University Press, 2005.
- [8]. Batı M., Sakiroglu S., Sokmen I., Electron transport in electrically biased inverse parabolic double-barrier structure, Chin. Phys. B, 25-5 (2016) 057307.
- [9]. Ohmukai M., The width ratio of two barriers in resonant tunneling, Mod. Phys. Lett. B, 17 (2003) 105-109.
- [10]. Almansour S.A., Hassen D., Theoretical study of electronic transmission in resonant tunneling diodes based on GaAs/AlGaAs double barriers under bias voltage, Optics and Photonics Journal, 4 (2014) 39-45.
Resonant Tunneling Properties of Gaussian Double Barrier Potential and Effect of the Electric Field Bias
Abstract
Resonant tunneling properties of finite Gaussian double quantum barrier
structure are studied in the absence and presence of electric field bias. Non-equilibrium
Green's function method based on the finite difference method is used. A
detailed analysis of the resonant energy level is given and the importance of
system parameters is discussed. The dependence of the transmission properties
on the barriers and electric field bias are revealed. A comparison between
different barrier shape data is presented.
Keywords
Non-equilibrium Green's functions Gaussian double barrier Resonant tunneling Electric field bias
References
- [1]. Chang L.L., Mendez E.E., Tejedor C., Resonant Tunneling in Semiconductors Physics and Applications, Springer US, 1991.
- [2]. Harrison P., Quantum Wells, Wires and Dots: Theoretical and Computational Physics of Semiconductor Nanostructures, 3rd ed. Wiley, 2010.
- [3]. Levi A.F.J., Applied Quantum Mechanics, 1st ed. Cambridge: Cambridge University Press, 2006.
- [4]. Ohmukai M., Triangular double barrier resonant tunneling, Mater. Sci. and Eng. B, 116 (2005) 87-90.
- [5]. Shokri A., Electrical transport engineering of semiconductor superlattice structures, Physica B, 438 (2014) 13-16.
- [6]. Jiang H., Cai W., Tsu R., Accuracy of the Frensley inflow boundary condition for Wigner equations in simulating resonant tunneling diodes, J. of Comp. Phys. 230 (2011) 2031-2044.
- [7]. Datta S., Quantum Transport: Atom to transistor, Cambridge: Cambridge University Press, 2005.
- [8]. Batı M., Sakiroglu S., Sokmen I., Electron transport in electrically biased inverse parabolic double-barrier structure, Chin. Phys. B, 25-5 (2016) 057307.
- [9]. Ohmukai M., The width ratio of two barriers in resonant tunneling, Mod. Phys. Lett. B, 17 (2003) 105-109.
- [10]. Almansour S.A., Hassen D., Theoretical study of electronic transmission in resonant tunneling diodes based on GaAs/AlGaAs double barriers under bias voltage, Optics and Photonics Journal, 4 (2014) 39-45.
Details
| Primary Language | English |
|---|---|
| Journal Section | Natural Sciences |
| Authors | |
| Publication Date | March 22, 2019 |
| Submission Date | July 6, 2017 |
| Acceptance Date | May 22, 2018 |
| Published in Issue | Year 2019Volume: 40 Issue: 1 |