Research Article
Year 2020,
, 929 - 937, 29.12.2020
Abstract
References
- [1] Litimein F., Rached D., Khenata R., Baltache H., FPLAPW study of the structural, electronic and optical properties of Ga2O3: Monoclinic and hexagonal phases, Journals of Alloys and Compounds, 488 (2009) 148-156.
- [2] Machon D., McMillan P. F., Xu B., Dong J., High pressure study of the β-to-α transition in Ga2O3, Physical Review B, 73 (2006) 094125.
- [3] Zinkevich M., Aldinger F., Thermodynamic Assessment of the Gallium-Oxygen System, Journal of the American Ceramic Society, 87 (2004) 683-691.
- [4] Geller S., Crystal structure of -Ga2O3, The Journal of Chemical Physics, 33 (1960) 676-684.
- [5] Ortiz A., Alonso J. C., Andrade E., Urbiola C., Structural and Optical Characteristics of Gallium Oxide Thin Films Deposited by Ultrasonic Spray Pyrolysis, Journal of The Electrochemical Society, 148 (2001) F26-F29.
- [6] Ji Z., Du J., Fan J., Wang W., Gallium oxide films for filter and solar-blind UV detector, Optical Materials, 28 (2006) 415-417.
- [7] Kokubun Y., Miura K., Endo F., Nakagomi S., Sol-gel prepared β-Ga2O3 thin films for ultraviolet photodetectors, Applied Physics Letters, 90, (2009) 031912: 1-031912:3.
- [8] Oshima T., Okuno T., Arai N., Suzuki N., Hino H., Fujita S., Flame Detection by a β-Ga2O3-Based Sensor, Japanese Journal of Applied Physics, 48 (2009) 011605: 1-011605:7.
- [9] Al-Kuhaili M. F., Durani S. M. A., Khawaja E. E., Optical properties of gallium oxide films deposited by electron-beam evaporation, Applied Physics Letters, 83 (2003) 4533-4535.
- [10] Miyata T., Nakatani T., Minami T., Manganese-activated gallium oxide electroluminescent phosphor thin films prepared using various deposition methods, Thin Solid Films, 373 (2000) 145-149.
- [11] Fleischer M., Meixner H., Characterization and crystallite growth of semiconducting high-temperature stable Ga2O3 thin films, Journal of Materials Science Letters, 11 (1992) 1728-1731.
- [12] Marie P., Portier X., Cardin J., Growth and characterization of gallium oxide thin films by radiofrequency magnetron sputtering, Physica Status Solidi (a), 205 (2008) 1943-1946. [13] Hao J., Lou Z., Renaud I., Cocivera M., Electroluminescence of europium doped gallium oxide thin films, Thin Solid Films, 467 (2004) 182-185.
- [14] Oldham N. C., Hill C. J., Garland C. M., McGill T. C., Deposition of Ga2O3-x ultrathin films on GaAs by e-beam evaporation, Journal of Vacuum Science and Technology A: Vacuum, Surfaces, and Films, 20 (2002) 809-813.
- [15] Passlack M., Hunt N. E. J., Schubert E. F., Zydzik G. J., Hong M., Mannaerts J. P., Opila R. L., Fischer R. J., Dielectric properties of electron-beam deposited Ga2O3 films, Applied Physics Letters, 64 (1994) 2715-2717.
- [16] Li X., Lu H. L., Ma H. P., Yang J. G., Chen J. X., Huang W., Guo Q., Feng J. J., Zhang D. W., Chemical, optical, and electrical characterization of Ga2O3 thin films grown by plasma-enhanced atomic layer deposition, Current Applied Physics, 19 (2019) 72-81.
- [17] Qiang S., Qingru W., Dong Z., Qinglin W., Shuhong L., Wenjun W., Quli F., Junying Z., Structural, optical and photoluminescence properties of Ga2O3 thin films deposited by vacuum thermal evaporation, Journal of Luminescence, 206 (2019) 53-58.
- [18] Tauc J., Grigorovici R., Vancu Y., Optical Properties and Electronic Structure of Amorphous Germanium, Phys. Status Solidi, 15 (1966) 627-637.
- [19] Pankove J. I., Absorption Edge of Impure Gallium Arsenide, Phys. Rev., 140 (1965) A2059-A2065.
- [20] Soliman L. I., Ibrahim A. M., Determination of optical constants of thermally evaporated CdSxSe1-x thin films using only transmission spectra, Fizika A, 6 (1997) 181-188.
- [21] Won D. J., Wang C. H., Jang H. K., Choi D. J., Effects of the thermally induced anatase-to-rutile phase transition in MOCVD-grown TiO2 films on structural and optical properties, Appl. Phys. A, 73 (2001) 595-600.
- [22] Senadım E., Eker S., Kavak H., Esen R., Optical and structural parameters of the ZnO thin film grown by pulsed filtered cathodic vacuum arc deposition, Solid State Communications, 139 (2006) 479-484.
- [23] Senadım Tuzemen E., Eker S., Kavak H., Esen R., Dependence of film thickness on the structural and optical properties of ZnO thin films, Applied Surface Science, 255 (2009) 6195-6200.
- [24] Higashiwaki M., Fujita S., Gallium Oxide: Materials Properties, Crystal Growth, and Devices, 2020 Edition (Springer Series in Materials Science) 1st ed. Print ISBN: 978-3-030-37152-4 Electronic ISBN: 978-3-030-37153-1
Year 2020,
, 929 - 937, 29.12.2020
Abstract
In the present work, Gallium Oxide (Ga2O3) were deposited as thin films by radio frequency (RF) magnetron sputtering at 300 °C substrate temperature on glass substrate using Ga2O3 target with 99.99% purity. The crystalline structure, morphology, optical properties of the Gallium Oxide films were determined using X-ray diffraction (XRD), scanning electron microscopy (SEM) and UV–Visible Spectrometry, respectively. Experimental results show that annealing has an important role in the changes observed in the characterization of the Gallium Oxide thin films. All thin films produced were amorphous, except for the annealed P4-500. SEM pictures reveal the morphology of prepared Gallium Oxide thin films. The refractive index and real part of complex dielectric constant increased as the film deposition pressure increased.
References
- [1] Litimein F., Rached D., Khenata R., Baltache H., FPLAPW study of the structural, electronic and optical properties of Ga2O3: Monoclinic and hexagonal phases, Journals of Alloys and Compounds, 488 (2009) 148-156.
- [2] Machon D., McMillan P. F., Xu B., Dong J., High pressure study of the β-to-α transition in Ga2O3, Physical Review B, 73 (2006) 094125.
- [3] Zinkevich M., Aldinger F., Thermodynamic Assessment of the Gallium-Oxygen System, Journal of the American Ceramic Society, 87 (2004) 683-691.
- [4] Geller S., Crystal structure of -Ga2O3, The Journal of Chemical Physics, 33 (1960) 676-684.
- [5] Ortiz A., Alonso J. C., Andrade E., Urbiola C., Structural and Optical Characteristics of Gallium Oxide Thin Films Deposited by Ultrasonic Spray Pyrolysis, Journal of The Electrochemical Society, 148 (2001) F26-F29.
- [6] Ji Z., Du J., Fan J., Wang W., Gallium oxide films for filter and solar-blind UV detector, Optical Materials, 28 (2006) 415-417.
- [7] Kokubun Y., Miura K., Endo F., Nakagomi S., Sol-gel prepared β-Ga2O3 thin films for ultraviolet photodetectors, Applied Physics Letters, 90, (2009) 031912: 1-031912:3.
- [8] Oshima T., Okuno T., Arai N., Suzuki N., Hino H., Fujita S., Flame Detection by a β-Ga2O3-Based Sensor, Japanese Journal of Applied Physics, 48 (2009) 011605: 1-011605:7.
- [9] Al-Kuhaili M. F., Durani S. M. A., Khawaja E. E., Optical properties of gallium oxide films deposited by electron-beam evaporation, Applied Physics Letters, 83 (2003) 4533-4535.
- [10] Miyata T., Nakatani T., Minami T., Manganese-activated gallium oxide electroluminescent phosphor thin films prepared using various deposition methods, Thin Solid Films, 373 (2000) 145-149.
- [11] Fleischer M., Meixner H., Characterization and crystallite growth of semiconducting high-temperature stable Ga2O3 thin films, Journal of Materials Science Letters, 11 (1992) 1728-1731.
- [12] Marie P., Portier X., Cardin J., Growth and characterization of gallium oxide thin films by radiofrequency magnetron sputtering, Physica Status Solidi (a), 205 (2008) 1943-1946. [13] Hao J., Lou Z., Renaud I., Cocivera M., Electroluminescence of europium doped gallium oxide thin films, Thin Solid Films, 467 (2004) 182-185.
- [14] Oldham N. C., Hill C. J., Garland C. M., McGill T. C., Deposition of Ga2O3-x ultrathin films on GaAs by e-beam evaporation, Journal of Vacuum Science and Technology A: Vacuum, Surfaces, and Films, 20 (2002) 809-813.
- [15] Passlack M., Hunt N. E. J., Schubert E. F., Zydzik G. J., Hong M., Mannaerts J. P., Opila R. L., Fischer R. J., Dielectric properties of electron-beam deposited Ga2O3 films, Applied Physics Letters, 64 (1994) 2715-2717.
- [16] Li X., Lu H. L., Ma H. P., Yang J. G., Chen J. X., Huang W., Guo Q., Feng J. J., Zhang D. W., Chemical, optical, and electrical characterization of Ga2O3 thin films grown by plasma-enhanced atomic layer deposition, Current Applied Physics, 19 (2019) 72-81.
- [17] Qiang S., Qingru W., Dong Z., Qinglin W., Shuhong L., Wenjun W., Quli F., Junying Z., Structural, optical and photoluminescence properties of Ga2O3 thin films deposited by vacuum thermal evaporation, Journal of Luminescence, 206 (2019) 53-58.
- [18] Tauc J., Grigorovici R., Vancu Y., Optical Properties and Electronic Structure of Amorphous Germanium, Phys. Status Solidi, 15 (1966) 627-637.
- [19] Pankove J. I., Absorption Edge of Impure Gallium Arsenide, Phys. Rev., 140 (1965) A2059-A2065.
- [20] Soliman L. I., Ibrahim A. M., Determination of optical constants of thermally evaporated CdSxSe1-x thin films using only transmission spectra, Fizika A, 6 (1997) 181-188.
- [21] Won D. J., Wang C. H., Jang H. K., Choi D. J., Effects of the thermally induced anatase-to-rutile phase transition in MOCVD-grown TiO2 films on structural and optical properties, Appl. Phys. A, 73 (2001) 595-600.
- [22] Senadım E., Eker S., Kavak H., Esen R., Optical and structural parameters of the ZnO thin film grown by pulsed filtered cathodic vacuum arc deposition, Solid State Communications, 139 (2006) 479-484.
- [23] Senadım Tuzemen E., Eker S., Kavak H., Esen R., Dependence of film thickness on the structural and optical properties of ZnO thin films, Applied Surface Science, 255 (2009) 6195-6200.
- [24] Higashiwaki M., Fujita S., Gallium Oxide: Materials Properties, Crystal Growth, and Devices, 2020 Edition (Springer Series in Materials Science) 1st ed. Print ISBN: 978-3-030-37152-4 Electronic ISBN: 978-3-030-37153-1
There are 23 citations in total.
Details
| Primary Language | English |
|---|---|
| Subjects | Classical Physics (Other) |
| Journal Section | Natural Sciences |
| Authors | |
| Publication Date | December 29, 2020 |
| Submission Date | August 14, 2020 |
| Acceptance Date | December 18, 2020 |
| Published in Issue | Year 2020 |