Çift GaAlAs/GaAs ve GaInAs/GaAs kuantum kuyularının kuyu genişliğine bağlı olarak elektronik özellikleri
Abstract
Bu çalışmada, çift Ga1-x Alx As/GaAs kuantum kuyularının (A yapısı) ve Ga1-x Inx As/GaAs /GaAs kuantum kuyularının (B yapısı) elektronik
özellikleri kuyu genişliğine bağlı olarak incelenmiştir. Etkin kütle yaklaşımı
kullanılarak, Schrödinger denkleminin çözümüyle enerji seviyeleri, dalga
fonksiyonları ve bu sistemin olasılık yoğunlukları hesaplanmıştır. Elde edilen
sonuçlara göre, A ve B yapısının temel farklılıkları yasak enerji aralığı ve
etkili kütledir. A yapısı için engel GaAlAs ve kuyu GaAs’dır. B yapısı için ise
engel GaAs ve kuyu GaInAs’dır. Ayrıca, A yapısının potansiyel yüksekliği ve
enerji seviyeleri her zaman B yapısından düşüktür. Kuyu genişliği, çift kuantum
kuyusunun (DQW) elektronik özellikleri üzerinde büyük bir etkiye sahiptir. Bu
özellikler, ayarlanabilir yarı iletken cihazların tasarımı için pratik bir
ilgiye sahiptir.
Keywords
Çift GaAlAs/GaAs kuantum kuyusu Çift GaInAs/GaAs kuantum kuyusu Kuyu genişliği elektronik özellikler
References
- Zhao G. J., Liang X. X., Ban S. L., Binding energies of donors in quantum wells under hydrostatic pressure, Phys. Lett. A 319 (2003) 191-197
- Ozturk E., Simultaneous effects of the intense laser field and the electric field on the nonlinear optical properties in GaAs/GaAlAs quantum well, Opt. Commun. 332 (2014) 136-143
- Raigoza N., Morales A. L., Duque C. A., Effects of hydrostatic pressure on donor states in symmetrical GaAs-Ga0.7Al0.3As double quantum wells, Physica B 363 (2005) 262-270
- Peter A. J., Navaneethakrishnan K., Simultaneous effects of pressure and temperature on donors in a GaAlAs/GaAs quantum well, Superlattice Microst. 43 (2008) 63-71
- Tung L.V., Vinh P. T., Phuc H.V., Magneto-optical properties of semi-parabolic plus semi-inverse squared quantum wells, Physica B 539 (2018) 117-122
- Kasapoglu E., Duque C. A., Mora-Ramos M. E., Restrepo R. L., Ungan F., Yesilgul U., Sari H., Sokmen I., Combined effects of intense laser field, electric and magnetic fields on the nonlinear optical properties of the step-like quantum well, Materials Chemistry and Physic, 154 (2015) 170-175
- Ozturk E., Sokmen I., Nonlinear intersubband absorption and refractive index changes in square and graded quantum well modulated by temperature and hydrostatic pressure, J. Lumin.134 (2013) 42-48
- Laidig W. D., Lin Y. F., Caldwell P. J., Properties of InxGa1-xAs-GaAs strained-layer quantum well-heterostructure injection lasers, J. Appl. Phys. 57 (1985) 33-37
- Ozturk E., Electric and intense laser field effect on the electronic properties of Ga1-xAlxAs/GaAs and Ga1-xInxAs/GaAs semi-parabolic quantum wells, Laser Physics, 26 (2016) 096102-096110
- Baser P., Altuntas I., Elagoz S., The hydrostatic pressure and temperature effects on hydrogenic impurity binding energies in GaAs/InxGa1-xAs/ GaAs square quantum well, Superlattice. Microst. 92 (2016) 210-216
- Ohno Y., Matsusue T., Sakaki H., Gigantic negative transconductance and mobility modulation in a double-quantum-well structure via gate-controlled resonant coupling, Appl. Phys. Lett. 62 (1993) 1952-1954Liu L., Swierkowski L.,
- Neilson D., Szymaiski J., Static and dynamic properties of coupled electron-electron and electron-hole layers, Phys. Rev. B 53 (1996) 7923-7931
- Ozturk O., Ozturk E., Elagoz S., The effect of barrier width on the electronic properties of double GaAlAs/GaAs and GaInAs/GaAs quantum wells, Journal of Molecular Structure 1156 (2018) 726-732
- Niculescu E.C., Eseanu N., Spandonide A., Laser field effects on the interband transitions in differently shaped quantum wells, U.P.B. Sci. Bull., Series A 77 (2015) 281-292
- Ochalski T.J., Zuk J., Reginski K., Bugajski M., Photoreflectance studies of InGaAs/GaAs/AlGaAs single quantum well laser structures, Acta Physica Polonica A 94 (1998) 463-467.
Electronic properties of double GaAlAs/GaAs and GaInAs/GaAs quantum wells as dependent on well width
Abstract
Herein, the electronic properties of double Ga1-x Alx As/GaAs quantum wells (A model) and
Ga1-x Inx As/GaAs quantum wells (B model) have
been examined related to the well width. The wave functions, the subband
energies and the probability densities of these systems under effective mass
approach were determined by the solution of Schrödinger equation. According to
the results obtained, the major diversities of A and B models are the effective
mass and the energy gap. For A model, GaAlAs is the barrier and GaAs is the
well. Whereas for B model, GaAs is the barrier and GaInAs is the well. Also,
the potential depth and the energy levels of A model are continuously smaller
than of B model. The well width has a great impact on the electronic features
of the double quantum well (DQW). These features have a convenient attention
for the purpose of adjustable semiconductor devices.
Keywords
Double GaAlAs/GaAs quantum well double GaInAs/GaAs quantum well well width electronic properties
References
- Zhao G. J., Liang X. X., Ban S. L., Binding energies of donors in quantum wells under hydrostatic pressure, Phys. Lett. A 319 (2003) 191-197
- Ozturk E., Simultaneous effects of the intense laser field and the electric field on the nonlinear optical properties in GaAs/GaAlAs quantum well, Opt. Commun. 332 (2014) 136-143
- Raigoza N., Morales A. L., Duque C. A., Effects of hydrostatic pressure on donor states in symmetrical GaAs-Ga0.7Al0.3As double quantum wells, Physica B 363 (2005) 262-270
- Peter A. J., Navaneethakrishnan K., Simultaneous effects of pressure and temperature on donors in a GaAlAs/GaAs quantum well, Superlattice Microst. 43 (2008) 63-71
- Tung L.V., Vinh P. T., Phuc H.V., Magneto-optical properties of semi-parabolic plus semi-inverse squared quantum wells, Physica B 539 (2018) 117-122
- Kasapoglu E., Duque C. A., Mora-Ramos M. E., Restrepo R. L., Ungan F., Yesilgul U., Sari H., Sokmen I., Combined effects of intense laser field, electric and magnetic fields on the nonlinear optical properties of the step-like quantum well, Materials Chemistry and Physic, 154 (2015) 170-175
- Ozturk E., Sokmen I., Nonlinear intersubband absorption and refractive index changes in square and graded quantum well modulated by temperature and hydrostatic pressure, J. Lumin.134 (2013) 42-48
- Laidig W. D., Lin Y. F., Caldwell P. J., Properties of InxGa1-xAs-GaAs strained-layer quantum well-heterostructure injection lasers, J. Appl. Phys. 57 (1985) 33-37
- Ozturk E., Electric and intense laser field effect on the electronic properties of Ga1-xAlxAs/GaAs and Ga1-xInxAs/GaAs semi-parabolic quantum wells, Laser Physics, 26 (2016) 096102-096110
- Baser P., Altuntas I., Elagoz S., The hydrostatic pressure and temperature effects on hydrogenic impurity binding energies in GaAs/InxGa1-xAs/ GaAs square quantum well, Superlattice. Microst. 92 (2016) 210-216
- Ohno Y., Matsusue T., Sakaki H., Gigantic negative transconductance and mobility modulation in a double-quantum-well structure via gate-controlled resonant coupling, Appl. Phys. Lett. 62 (1993) 1952-1954Liu L., Swierkowski L.,
- Neilson D., Szymaiski J., Static and dynamic properties of coupled electron-electron and electron-hole layers, Phys. Rev. B 53 (1996) 7923-7931
- Ozturk O., Ozturk E., Elagoz S., The effect of barrier width on the electronic properties of double GaAlAs/GaAs and GaInAs/GaAs quantum wells, Journal of Molecular Structure 1156 (2018) 726-732
- Niculescu E.C., Eseanu N., Spandonide A., Laser field effects on the interband transitions in differently shaped quantum wells, U.P.B. Sci. Bull., Series A 77 (2015) 281-292
- Ochalski T.J., Zuk J., Reginski K., Bugajski M., Photoreflectance studies of InGaAs/GaAs/AlGaAs single quantum well laser structures, Acta Physica Polonica A 94 (1998) 463-467.
Details
| Primary Language | English |
|---|---|
| Journal Section | Natural Sciences |
| Authors | |
| Publication Date | June 30, 2019 |
| Submission Date | February 1, 2019 |
| Acceptance Date | April 3, 2019 |
| Published in Issue | Year 2019 |