Structural, morphological and
optical properties of undoped and boron doped Indium Selenide (InSe) thin films
grown on glass and layered Gallium Selenide (GaSe) single crystal substrates
with SILAR method have been investigated
by XRD, AFM and UV-Vis spectrophotometer techniques. XRD measurements showed that the crystal structure of InSe thin
films grown on glass substrates were hexagonal P61 γ-In2Se3
with lattice parameters a=7.1286 Å, c=19.382 Å and z=6 while the InSe thin
films grew as hexagonal P63/mmc InSe with lattice parameters a=4.005 Å,
c=16.640 Å and z=4 on GaSe single crystal substrates. The AFM images showed
that average particle sizes of undoped and boron doped InSe thin films were
found to be varying between 26.5-60.2 nm and 30.9-101.5 nm grown on glass and
GaSe single crystal substrates, respectively. The optical absorption spectra of
undoped and boron doped InSe thin films grown on both glass and GaSe single
crystal substrates showed absorption maxima around the 2.00 and 2.24 eV,
respectively. The calculated Urbach energies of the InSe thin films grown on
glass substrates were found bigger than those of the InSe thin films grown on
GaSe single crystal substrates.
Indium Selenide SILAR thin film GaSe single crystal substrate boron
Birincil Dil | İngilizce |
---|---|
Bölüm | Natural Sciences |
Yazarlar | |
Yayımlanma Tarihi | 30 Eylül 2019 |
Gönderilme Tarihi | 30 Ocak 2019 |
Kabul Tarihi | 19 Ağustos 2019 |
Yayımlandığı Sayı | Yıl 2019 |