Abstract
InxGa1-xAs layers on undoped InP (100) substrates
were grown with Aixtron 200-4
RF/S horizontal Metal Organic Chemical Vapour Deposition (MOCVD)
reactor. All the epilayers have
been grown with different indium compositions. Thickness of the samples were measured via Scanning
Electron Microscopy (SEM). Indium concentrations were defined by High
Resolution X-ray Diffraction (HRXRD) and optical measurements were done with
spectroscopic ellipsometry in order to obtain refractive index (n) and
thickness of the samples. In-situ reflectance is used to measure thickness of
samples. Then all of the thicknesses are compared.
References
- [1]. Hellara J., Hassen F., Maaref H., Dumont H., Souliere V., Monteil Y. Alloy broadening effect on optical properties of InGaAs grown by MOCVD with TMAs precursor, Microelectronics Journal 2004; 35: 207-212.
- [2]. Nahory R.E., Pollack M.A., Johnson Jr W.D., Barns, R.L. Band gap versus composition and demonstration of Vegard law for In1-xGaxAsyPy lattice matched to InP, Appl. Phys. Lett. 1978; 33: 659-661.
- [3]. Yamaguchi M., Takamoto T., Araki K., Ekins-Daukes N.J. Multi-junction III–V solar cells: current status and future potential, Solar Energy 2005; 79: 78-85.
- [4]. Lee J.J., Mawst L.J., Botez D. MOCVD growth of asymmetric 980 nm InGaAs/ InGaP broad-waveguide diode lasers for high power applications, Journal of Crystal Growth 2003; 249: 100-105.
- [5]. Chen Y.W., Hsu W.C., Hsu R.T., Wu Y.H., Chen Y.J. Low dark current. InGaAs(P)/InP p-i-n photodiodes, Jpn. J. Appl. Phys. 2003; 42: 4249-4252.
- [6]. Yang Y., Sun X.W., Chen B.J., Xu C.X., Chen T.P., Sun C.Q., Tay B.K., Sun Z. Refractive Indices of Textured Indium Tin Oxide and Zinc Oxide Thin Films, Thin Solid Films 2006; 510: 95-101.
- [7]. Chiu M.H., Lee J.Y., Su D.C. Complex refractive-index measurement based on Fresnel's equations and the uses of heterodyne interferometry, Applied Optics 1999; 38: 4047-4052. [8]. Dai Z.H., Zhang R.J., Shao J., Chen Y.M., Zheng Y.X., Wu J.D., Chen L.Y. Optical Properties of Zinc-oxide Films Determined Using Spectroscopic. Ellipsometry with Various Dispersion Models, Journal of the Korean Physical Society 2009; 55: 1227-1232.
- [9]. Bhattacharya P., Properties of Lattice-Matched And Strained Indium Gallium Arsenide, University Of Michigan, USA. 1993.
- [10]. Grasse C., Tomita Y., Wiecha P., Meyer R., Gründl T., Müller M., Amann M.C. in-situ Characterization of MOCVD grown GaAs and InP-based tunable VSCEL structures, The 25th International Conference on Indium Phosphide and Related Materials 2013; May 19-23.
- [11]. Takagi T. Refractive index of Ga 1-x In x As prepared by vapor-phase epitaxy, Jpn. J. Appl. Phys 1978; 17: 1813-1817.
Abstract
InxGa1-xAs tabakaları katkısız InP (100) alttaş
üzerine Aixtron 200-4 RF/S yatay
Metal Organik Kimyasal Buhar Depolama (MOCVD) sistemi ile büyütülmüştür. Bütün epikatmanlar farklı indiyum
konsantrasyonlarında büyütülmüştür. Katmanların kalınlıkları Taramalı Elektron
Mikroskobu (SEM) ile ölçülmüştür. İndiyum konsantrasyonları Yüksek Çözünürlüklü
X-ışını Kırınım (HRXRD) cihazı ile tayin edildi ve kırılma indisi (n) ve
kalınlıkların belirlenmesi için optiksel ölçümler spektroskopik elipsometre ile
yapıldı. In-situ yansıma, örneklerin kalınlıklarının belirlenmesi için
kullanılmıştır. Son olarak bütün kalınlıklar karşılaştırılmıştır.
References
- [1]. Hellara J., Hassen F., Maaref H., Dumont H., Souliere V., Monteil Y. Alloy broadening effect on optical properties of InGaAs grown by MOCVD with TMAs precursor, Microelectronics Journal 2004; 35: 207-212.
- [2]. Nahory R.E., Pollack M.A., Johnson Jr W.D., Barns, R.L. Band gap versus composition and demonstration of Vegard law for In1-xGaxAsyPy lattice matched to InP, Appl. Phys. Lett. 1978; 33: 659-661.
- [3]. Yamaguchi M., Takamoto T., Araki K., Ekins-Daukes N.J. Multi-junction III–V solar cells: current status and future potential, Solar Energy 2005; 79: 78-85.
- [4]. Lee J.J., Mawst L.J., Botez D. MOCVD growth of asymmetric 980 nm InGaAs/ InGaP broad-waveguide diode lasers for high power applications, Journal of Crystal Growth 2003; 249: 100-105.
- [5]. Chen Y.W., Hsu W.C., Hsu R.T., Wu Y.H., Chen Y.J. Low dark current. InGaAs(P)/InP p-i-n photodiodes, Jpn. J. Appl. Phys. 2003; 42: 4249-4252.
- [6]. Yang Y., Sun X.W., Chen B.J., Xu C.X., Chen T.P., Sun C.Q., Tay B.K., Sun Z. Refractive Indices of Textured Indium Tin Oxide and Zinc Oxide Thin Films, Thin Solid Films 2006; 510: 95-101.
- [7]. Chiu M.H., Lee J.Y., Su D.C. Complex refractive-index measurement based on Fresnel's equations and the uses of heterodyne interferometry, Applied Optics 1999; 38: 4047-4052. [8]. Dai Z.H., Zhang R.J., Shao J., Chen Y.M., Zheng Y.X., Wu J.D., Chen L.Y. Optical Properties of Zinc-oxide Films Determined Using Spectroscopic. Ellipsometry with Various Dispersion Models, Journal of the Korean Physical Society 2009; 55: 1227-1232.
- [9]. Bhattacharya P., Properties of Lattice-Matched And Strained Indium Gallium Arsenide, University Of Michigan, USA. 1993.
- [10]. Grasse C., Tomita Y., Wiecha P., Meyer R., Gründl T., Müller M., Amann M.C. in-situ Characterization of MOCVD grown GaAs and InP-based tunable VSCEL structures, The 25th International Conference on Indium Phosphide and Related Materials 2013; May 19-23.
- [11]. Takagi T. Refractive index of Ga 1-x In x As prepared by vapor-phase epitaxy, Jpn. J. Appl. Phys 1978; 17: 1813-1817.
Details
| Journal Section | Natural Sciences |
|---|---|
| Authors | |
| Publication Date | December 8, 2017 |
| Submission Date | April 5, 2017 |
| Acceptance Date | May 15, 2017 |
| Published in Issue | Year 2017 |