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Ti/ p-Si Schottky Diyot Parametrelerinin Belirlenmesi için I – V Yöntemlerinin Karşılaştırılması

Year 2022, Volume: 27 Issue: 1, 158 - 167, 25.04.2022
https://doi.org/10.53433/yyufbed.1058643

Abstract

Ti/p-Si Schottky diyotun elektriksel özellikleri 80 K- 300 K sıcaklık aralığında ve 20 K’lik adımlarla sıcaklığın bir fonksiyonu olarak incelenmiştir. İdealite faktörü (n), engel yüksekliği (Фb) ve seri direnç (Rs) gibi temel diyot parametreleri akım-gerilim (I-V) karakteristiği özelliklerinden faydalanarak geleneksel I-V yöntemi, Norde yöntemi ve Cheung fonksiyonlarından hesaplanmıştır. 300 K sıcaklığında engel yüksekliği değerleri I-V, Cheung ve Norde yöntemlerinden sırasıyla 0.738 eV, 0.658 eV ve 0.782 eV olarak bulunmuştur. İdealite faktörü ise I-V yöntemde 1.43 (300 K) ve Cheung yönteminde 3.33 (300 K) olarak hesaplanmıştır. 80 K- 300 K sıcaklık aralığında farklı yöntemlerden hesaplanan parametrelerin değerleri birbiriyle kıyaslanmıştır. Artan sıcaklık ile idealite faktörünün azalması ve engel yüksekliğinin artması, diyot parametrelerinin sıcaklığa güçlü bir şekilde bağlı olduğunu göstermektedir.

References

  • Aldemir, D. A., Kökçe, A., & Özdemir, A. F. (2017). The comparison of the methods used for determining of Schottky diode parameters in a wide temperature range. Sakarya Üniversitesi Fen Bilimleri Enstitüsü Dergisi, 21(6), 1286-1292. doi: 10.16984/saufenbilder.279996
  • Asıl, H., Çınar, K., Gür, E., Coşkun, C., & Tüzemen, S. (2013). Temperature dependent current-voltage characteristics of electrodeposited p-ZnO/n-Si heterojuntion. International Journal of Physical Sciences, 8(10), 371-379. doi: 10.5897/IJPS2013.3851
  • Asıl Uğurlu, H., Çınar Demir, K., & Coşkun, C. (2021). The effect of thermal annealing on Ti/p-Si Schottky diodes. Journal of Materials Science: Materials in Electronics, 32, 15343–15351. doi: 10.1007/s10854-021-06084-1
  • Aydın, M. E., Güllü, Ö., & Yıldırım, N. (2008). Temperature dependence of current–voltage characteristics of Sn/p-Si Schottky contacts. Physica B, 403, 131–138. doi: 10.1016/j.physb.2007.08.089
  • Aydoğan, Ş., Sağlam, M., & Türüt, A. (2005). On the barrier inhomogeneities of polyaniline/p-Si/Al structure at low temperature. Applied Surface Science, 250, 43–49. doi: 10.1016/j.apsusc.2004.12.020
  • Aydoğan, Ş., Sağlam, M., & Türüt, A. (2008). Some electrical properties of polyaniline/p-Si/Al structure at 300 K and 77 K temperatures. Microelectronic Engineering, 85, 278-283. doi: 10.1016/j.mee.2007.06.004
  • Aydoğan, Ş., Çınar, K., Asıl, H., Coşkun, C., & Türüt, A. (2009). Electrical characterization of Au/n-ZnO Schottky contacts on n-Si. Journal of Alloys and Compounds, 476, 913-918. doi: 10.1016/j.jallcom.2008.09.131
  • Bohlin, K. E. (1986). Generalized Norde plot including determination of the ideality factor. Journal of Applied Physics, 60(3), 1223-1224. doi: 10.1063/1.337372
  • Chand, S., & Kumar, J. (1996). Current transport in Pd2Si/n-Si(100) Schottky barrier diodes at low temperatures. Applied Physics A, 63, 171-178. doi: 10.1007/BF01567646
  • Chattopadhyay, S., Bera, L. K., Maharatna, K., Chakrabarti, S., Dhar, S., Ray, S. K., & Maiti, C. K. (1997). Schottky diode characteristics of Ti on strained-Si. Solid-State Electronics, 41 (12), 1891-1893. doi:10.1016/S0038-1101(97)00143-3
  • Cheung, S. K., & Cheung, N. W. (1986). Extraction of Schottky diode parameters from forward current‐voltage characteristics. Applied Physics Letters, 49, 85-87. doi: 10.1063/1.97359
  • Çetin, H., Şahin, B., Ayyıldız, E., & Türüt, A. (2004). The barrier-height inhomogeneity in identically prepared H-terminated Ti/p-Si Schottky barrier diodes. Semiconductor Science and Technology, 19, 1113-1116. doi:10.1088/0268-1242/19/9/007
  • Çetin, H., Şahin, B., Ayyıldız, E., & Türüt, A. (2005). Ti/p-Si Schottky barrier diodes with interfacial layer prepared by thermal oxidation. Physica B: Condensed Matter, 364, 133-141. doi: 10.1016/j.physb.2005.04.001
  • Çetin, H., & Ayyıldız, E. (2005). Temperature dependence of electrical parameters of the Au/n-InP Schottky barrier diodes. Semiconductor Science and Technology, 20, 625–631. doi: 10.1088/0268-1242/20/6/025
  • Dere, A., Tataroğlu, A., Abdullah, G. Al-Sehemi, Eren, H., Soylu, M., Ahmed, A. Al-Ghamdi., & Yakuphanoğlu, F. (2020). A temperature sensor based on Al/p-Si/ CuCdO2/Al diode for low temperature applications. Journal of Electronic Materials, 49, 2317–2325. doi: 10.1007/s11664-020-07989-z
  • Demircioğlu, Ö., Karataş, Ş., Yıldırım, N., Bakkaloğlu, Ö. F., & Türüt, A. (2011). Temperature dependent current–voltage and capacitance–voltage characteristics of chromium Schottky contacts formed by electrodeposition technique on n-type Si. Journal of Alloys and Compounds, 509, 6433–6439. doi: 10.1016/j.jallcom.2011.03.082
  • Demircioğlu, Ö., Karataş, Ş., Yıldırım, N., & Bakkaloğlu, Ö. F. (2011). Effects of temperature on series resistance determination of electrodeposited Cr/n-Si/Au–Sb Schottky structures. Microelectronic Engineering, 88, 2997–3002. doi: 10.1016/j.mee.2011.04.060
  • Doğan, H., & Elagoz, S. (2014). Temperature-dependent electrical transport properties of (Au/Ni)/n-GaN Schottky barrier diodes. Physica E: Low-dimensional Systems and Nanostructures, 63, 186-192. doi: 10.1016/j.physe.2014.04.019
  • Durmuş, H.¸ Kılıç, H. Ş.¸ Gezgin, S. Y., & Karataş, Ş. (2018). Analysis of current-voltage-temperature and capacitance-voltage-temperature characteristics of Re/n-Si Schottky Contacts. Silicon, 10, 361–369. doi: 10.1007/s12633-016-9456-2
  • Göksu, T., Yıldırım, N., Korkut, H., Özdemir, A. F., Türüt, A., & Kökçe, A. (2010). Barrier he-ight temperature coefficient in ideal Ti/n-GaAs Schottky contacts. Microelectronic Engineering, 87, 1781–1784. doi: 10.1016/j.mee.2009.10.012
  • Gümüş, A., Türüt, A., & Yalçın, N. (2002). Temperature dependent barrier characteristics of CrNiCo alloy Schottky contacts on n-type molecular-beam epitaxy GaAs. Journal of Applied Physics, 9 (1), 245-250. doi: 10.1063/1.1424054
  • Janardhanam, V., Ashok Kumar, A., Rajagopal Reddy, V., & Narasimha Reddy, P. (2009). Study of current–voltage–temperature (I–V–T) and capacitance–voltage–temperature (C–V–T) characteristics of molybdenum Schottky contacts on n-InP (1 0 0). Journal of Alloys and Compounds, 485, 467-472. doi: 10.1016/j.jallcom.2009.05.141
  • Kumar, A., Kumar, A., Sharma, K. K., & Chand, S. (2019). Analysis of anomalous transport mechanism across the interface of Ag/p-Si Schottky diode in wide temperature range. Superlattices and Microstructures, 128, 373-381. doi: 10.1016/j.spmi.2019.02.014
  • Liauh, H. R., Chen, M. C., Chen, J. F., Chen, L. J. (1993). Electrical and microstructural characteristics of Ti contacts on (001)Si. Journal of Applied Physics, 74, 2590, doi:10.1063/1.354672.
  • Norde, H. (1979). A modified forward I-V plot for Schottky diodes with high series resistance. Journal of Applied Physics, 50(7), 5052-5053. doi: 10.1063/1.325607
  • Oruç, Ç., & Altındal, A. (2018). Comparative study of I–V methods to extract Au/FePc/p-Si Schottky barrier diode parameters. Applied Physics A, 124, 81. doi: 10.1007/s00339-017-1461-9
  • Rhoderick, E. H., & Williams, R. H. (1988). Metal-Semiconductor Contacts. Second Edition, Clarendon Press, Oxford.
  • Sehkar Reddy, P. R., Janardhanam, V., Shim, K. H., Reddy, V. R., Lee, S. N., Park, S. J., & Choi, C. J. (2020). Temperature-dependent Schottky barrier parameters of Ni/Au on n-type (001) -Ga2O3 Schottky barrier diode. Vacuum, 171, 109012. doi: 10.1016/j.vacuum.2019.109012

Comparison of I – V Methods for Determination of Ti/ p-Si Schottky Diode Parameters

Year 2022, Volume: 27 Issue: 1, 158 - 167, 25.04.2022
https://doi.org/10.53433/yyufbed.1058643

Abstract

The electrical properties of the Ti/p-Si Schottky diode were investigated as a function of temperature within the temperature interval of 80 K-300 K and in 20 K steps. Fundamental diode parameters such as ideality factor (n), barrier height (Фb) and series resistance (Rs) were calculated making use of the conventional I-V method, the Norde method and Cheung functions by utilizing the current-voltage (I-V) characteristics. The barrier height values at 300 K temperature were found to be 0.738 eV, 0.658 eV and 0.782 eV from I-V, Cheung and Norde methods, respectively. The ideality factor was calculated as 1.43 (300 K) in the I-V method and 3.33 (300 K) in the Cheung method. The values of the parameters calculated from different methods in the temperature range of 80 K- 300 K were compared with each other. The decrease in ideality factor and increase in barrier height with increasing temperature show that diode parameters are strongly dependent on temperature

References

  • Aldemir, D. A., Kökçe, A., & Özdemir, A. F. (2017). The comparison of the methods used for determining of Schottky diode parameters in a wide temperature range. Sakarya Üniversitesi Fen Bilimleri Enstitüsü Dergisi, 21(6), 1286-1292. doi: 10.16984/saufenbilder.279996
  • Asıl, H., Çınar, K., Gür, E., Coşkun, C., & Tüzemen, S. (2013). Temperature dependent current-voltage characteristics of electrodeposited p-ZnO/n-Si heterojuntion. International Journal of Physical Sciences, 8(10), 371-379. doi: 10.5897/IJPS2013.3851
  • Asıl Uğurlu, H., Çınar Demir, K., & Coşkun, C. (2021). The effect of thermal annealing on Ti/p-Si Schottky diodes. Journal of Materials Science: Materials in Electronics, 32, 15343–15351. doi: 10.1007/s10854-021-06084-1
  • Aydın, M. E., Güllü, Ö., & Yıldırım, N. (2008). Temperature dependence of current–voltage characteristics of Sn/p-Si Schottky contacts. Physica B, 403, 131–138. doi: 10.1016/j.physb.2007.08.089
  • Aydoğan, Ş., Sağlam, M., & Türüt, A. (2005). On the barrier inhomogeneities of polyaniline/p-Si/Al structure at low temperature. Applied Surface Science, 250, 43–49. doi: 10.1016/j.apsusc.2004.12.020
  • Aydoğan, Ş., Sağlam, M., & Türüt, A. (2008). Some electrical properties of polyaniline/p-Si/Al structure at 300 K and 77 K temperatures. Microelectronic Engineering, 85, 278-283. doi: 10.1016/j.mee.2007.06.004
  • Aydoğan, Ş., Çınar, K., Asıl, H., Coşkun, C., & Türüt, A. (2009). Electrical characterization of Au/n-ZnO Schottky contacts on n-Si. Journal of Alloys and Compounds, 476, 913-918. doi: 10.1016/j.jallcom.2008.09.131
  • Bohlin, K. E. (1986). Generalized Norde plot including determination of the ideality factor. Journal of Applied Physics, 60(3), 1223-1224. doi: 10.1063/1.337372
  • Chand, S., & Kumar, J. (1996). Current transport in Pd2Si/n-Si(100) Schottky barrier diodes at low temperatures. Applied Physics A, 63, 171-178. doi: 10.1007/BF01567646
  • Chattopadhyay, S., Bera, L. K., Maharatna, K., Chakrabarti, S., Dhar, S., Ray, S. K., & Maiti, C. K. (1997). Schottky diode characteristics of Ti on strained-Si. Solid-State Electronics, 41 (12), 1891-1893. doi:10.1016/S0038-1101(97)00143-3
  • Cheung, S. K., & Cheung, N. W. (1986). Extraction of Schottky diode parameters from forward current‐voltage characteristics. Applied Physics Letters, 49, 85-87. doi: 10.1063/1.97359
  • Çetin, H., Şahin, B., Ayyıldız, E., & Türüt, A. (2004). The barrier-height inhomogeneity in identically prepared H-terminated Ti/p-Si Schottky barrier diodes. Semiconductor Science and Technology, 19, 1113-1116. doi:10.1088/0268-1242/19/9/007
  • Çetin, H., Şahin, B., Ayyıldız, E., & Türüt, A. (2005). Ti/p-Si Schottky barrier diodes with interfacial layer prepared by thermal oxidation. Physica B: Condensed Matter, 364, 133-141. doi: 10.1016/j.physb.2005.04.001
  • Çetin, H., & Ayyıldız, E. (2005). Temperature dependence of electrical parameters of the Au/n-InP Schottky barrier diodes. Semiconductor Science and Technology, 20, 625–631. doi: 10.1088/0268-1242/20/6/025
  • Dere, A., Tataroğlu, A., Abdullah, G. Al-Sehemi, Eren, H., Soylu, M., Ahmed, A. Al-Ghamdi., & Yakuphanoğlu, F. (2020). A temperature sensor based on Al/p-Si/ CuCdO2/Al diode for low temperature applications. Journal of Electronic Materials, 49, 2317–2325. doi: 10.1007/s11664-020-07989-z
  • Demircioğlu, Ö., Karataş, Ş., Yıldırım, N., Bakkaloğlu, Ö. F., & Türüt, A. (2011). Temperature dependent current–voltage and capacitance–voltage characteristics of chromium Schottky contacts formed by electrodeposition technique on n-type Si. Journal of Alloys and Compounds, 509, 6433–6439. doi: 10.1016/j.jallcom.2011.03.082
  • Demircioğlu, Ö., Karataş, Ş., Yıldırım, N., & Bakkaloğlu, Ö. F. (2011). Effects of temperature on series resistance determination of electrodeposited Cr/n-Si/Au–Sb Schottky structures. Microelectronic Engineering, 88, 2997–3002. doi: 10.1016/j.mee.2011.04.060
  • Doğan, H., & Elagoz, S. (2014). Temperature-dependent electrical transport properties of (Au/Ni)/n-GaN Schottky barrier diodes. Physica E: Low-dimensional Systems and Nanostructures, 63, 186-192. doi: 10.1016/j.physe.2014.04.019
  • Durmuş, H.¸ Kılıç, H. Ş.¸ Gezgin, S. Y., & Karataş, Ş. (2018). Analysis of current-voltage-temperature and capacitance-voltage-temperature characteristics of Re/n-Si Schottky Contacts. Silicon, 10, 361–369. doi: 10.1007/s12633-016-9456-2
  • Göksu, T., Yıldırım, N., Korkut, H., Özdemir, A. F., Türüt, A., & Kökçe, A. (2010). Barrier he-ight temperature coefficient in ideal Ti/n-GaAs Schottky contacts. Microelectronic Engineering, 87, 1781–1784. doi: 10.1016/j.mee.2009.10.012
  • Gümüş, A., Türüt, A., & Yalçın, N. (2002). Temperature dependent barrier characteristics of CrNiCo alloy Schottky contacts on n-type molecular-beam epitaxy GaAs. Journal of Applied Physics, 9 (1), 245-250. doi: 10.1063/1.1424054
  • Janardhanam, V., Ashok Kumar, A., Rajagopal Reddy, V., & Narasimha Reddy, P. (2009). Study of current–voltage–temperature (I–V–T) and capacitance–voltage–temperature (C–V–T) characteristics of molybdenum Schottky contacts on n-InP (1 0 0). Journal of Alloys and Compounds, 485, 467-472. doi: 10.1016/j.jallcom.2009.05.141
  • Kumar, A., Kumar, A., Sharma, K. K., & Chand, S. (2019). Analysis of anomalous transport mechanism across the interface of Ag/p-Si Schottky diode in wide temperature range. Superlattices and Microstructures, 128, 373-381. doi: 10.1016/j.spmi.2019.02.014
  • Liauh, H. R., Chen, M. C., Chen, J. F., Chen, L. J. (1993). Electrical and microstructural characteristics of Ti contacts on (001)Si. Journal of Applied Physics, 74, 2590, doi:10.1063/1.354672.
  • Norde, H. (1979). A modified forward I-V plot for Schottky diodes with high series resistance. Journal of Applied Physics, 50(7), 5052-5053. doi: 10.1063/1.325607
  • Oruç, Ç., & Altındal, A. (2018). Comparative study of I–V methods to extract Au/FePc/p-Si Schottky barrier diode parameters. Applied Physics A, 124, 81. doi: 10.1007/s00339-017-1461-9
  • Rhoderick, E. H., & Williams, R. H. (1988). Metal-Semiconductor Contacts. Second Edition, Clarendon Press, Oxford.
  • Sehkar Reddy, P. R., Janardhanam, V., Shim, K. H., Reddy, V. R., Lee, S. N., Park, S. J., & Choi, C. J. (2020). Temperature-dependent Schottky barrier parameters of Ni/Au on n-type (001) -Ga2O3 Schottky barrier diode. Vacuum, 171, 109012. doi: 10.1016/j.vacuum.2019.109012
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Details

Primary Language Turkish
Subjects Engineering
Journal Section Articles
Authors

Hatice Asıl Uğurlu 0000-0002-1114-3627

Early Pub Date April 25, 2022
Publication Date April 25, 2022
Submission Date January 16, 2022
Published in Issue Year 2022 Volume: 27 Issue: 1

Cite

APA Asıl Uğurlu, H. (2022). Ti/ p-Si Schottky Diyot Parametrelerinin Belirlenmesi için I – V Yöntemlerinin Karşılaştırılması. Yüzüncü Yıl Üniversitesi Fen Bilimleri Enstitüsü Dergisi, 27(1), 158-167. https://doi.org/10.53433/yyufbed.1058643