Growth Temperature Dependency of High Al Content AlGaN Epilayers on AlN/Al2O3 Templates

İlkay Demir

doi:10.17776/csj.453576

Research Article

Growth Temperature Dependency of High Al Content AlGaN Epilayers on AlN/Al2O3 Templates

Year 2018, Volume: 39 Issue: 3, 728 - 733, 30.09.2018

İlkay Demir

https://doi.org/10.17776/csj.453576

Cited By: 5

Abstract

In this work, MOVPE (Metalorganic Vapor Phase
Epitaxy) growth and characterization studies of high Al content AlGaN epilayers
are reported. We utilize high resolution
X-ray diffraction (HRXRD) and atomic force microscope (AFM) techniques to
analyze the crystalline quality and
surface morphology of AlGaN epilayers. The role of the growth temperature of
AlGaN epilayers on the structural quality and the surface morphology was
investigated. Growth and measurement results show that single phase AlGaN
epilayers were grown on AlN/Al₂O₃ template. It is
concluded that the increasing growth temperature increases the Al content of
AlGaN epilayers which enable to control the alloy concentration of AlGaN.
Furthermore, the increasing Al content in AlGaN epilayers leads to the smooth
surface which indicates that the decreasing number of dislocation density.

Keywords

AlGaN, MOVPE, AlN, Al2O3, X-ray diffraction, Atomic force microscope

References

[1]. Brunner F., Zettler J-T., Weyers M., Advanced in-situ control for III-nitride RF power device epitaxy, Semicond. Sci. Technol., 33 (2018) 045014.
[2]. Li K., Rakheja S., An analytic current-voltage model for quasi-ballistic III-nitride high electron mobility transistors, Journal of Applied Physics, 123 (2018) 184501.
[3]. Cordier Y., Comyn R., Frayssinet E., Khoury M., Lesecq M., Defrance N., De Jaeger J-C, Influence of AlN Growth Temperature on the Electrical Properties of Buffer Layers for GaN HEMTs on Silicon, Physica Status Solidi A, 215 (2018) 1700637.
[4]. Lee D., Lee J. W., Jang J., Shin I-S., Jin L., Park J. H., Kim J., Lee J., Noh H-S., Kim Y-I., Park Y., Lee G-D, Park Y., Kim J. K., Yoon E., Improved performance of AlGaN-based deep ultraviolet light-emitting diodes with nano-patterned AlN/sapphire substrates, Appl. Phys. Lett. 110 (2017), 191103.
[5]. Alias M. S., Tangi M., Holguin-Lerma J. A., Stegenburgs E., Alatawi A. A., Ashry I., Subedi R. C., Priante D., Shakfa M. K., Ng T. K., Ooi, B. S., Review of nanophotonics approaches using nanostructures and nanofabrication for III-nitrides ultraviolet-photonic devices, J. Nanophoton. 12 (4) (2018), 043508.
[6]. Wang W., Li Y., Zheng Y., Yang Z., Lin Z., Chen X., Lu Z., Li G., Performance-improved vertical GaN-based light-emitting diodes on Si substrates through designing the epitaxial structure CrystEngComm, 20 (2018) 4685-4693.
[7]. Laws E. A.,, Environmental Toxicology: Selected Entries from the Encyclopedia of Sustainability Science and Technology, Springer Science & Business Media, 2013.
[8]. Demir I., Robin Y., McClintock R., Elagoz S., Zekentes., Razeghi M., Direct growth of thick AlN layers on nanopatterned Si substrates by cantilever epitaxy, Phys. Status Solidi A 214 (4) (2017) 1600363.
[9]. Huang L., Li Y., Wang W., Li X., Zheng Y., Wang H., Zhang Z., Li G., Growth of high-quality AlN epitaxial film by optimizing the Si substrate surface, Applied Surface Science 435 (2018) 163–169.
[10]. Li Y., Wang W., Li X., Huang L., Zheng Y., Chen X., Li G., Nucleation layer design for growth of a high-quality AlN epitaxial film on a Si(111) substrate, CrystEngComm, 20 (2018) 1483-1490.
[11]. Tran B. T., Hirayama H., Growth and Fabrication of High External Quantum Efficiency AlGaN-Based Deep Ultraviolet Light-Emitting Diode Grown on Pattern Si Substrate, Scientific Reports 7 (2017) 12176.
[12]. Dai Q., Zhang X., Liang Z., Yang G., Wu Z., Chen S., Zhao J., Meng C., Wang J., Cui Y., Effects of indium surfactant on growth and characteristics of (1122) plane AlGaN-based multiple quantum wells, Optical Materials Express, 8 (2018) 24-29.
[13]. Yang W., Li J., Lin W., Li S., Chen H., Liu D., Yang X., Kang J., Control of two-dimensional growth of AlN and high Al-content AlGaN-based MQWs for deep-UV LEDs, AIP Advances 3 (2013), 052103.
[14]. Demir I., Li H., Robin Y., McClintock R., Elagoz S., Razeghi M., Sandwich method to grow high quality AlN by MOCVD, Journal of Physics D: Applied Physics 51 (8) (2018) 085104.
[15]. Shimanara Y., Miyake H., Hiramatsu K., Fukuyo F., Okada T., Takaoka H., Yoshida H., Growth of High-Quality Si-Doped AlGaN by Low-Pressure Metalorganic Vapor Phase Epitaxy, Japanese Journal of Applied Physics 50 (2011) 095502.
[16]. Funato M., Banal R. G. Kawakami Y., Screw dislocation-induced growth spirals as emissive exciton localization centers in Al-rich AlGaN/AlN quantum wells, AIP Advances 5 (2015) 117115.
[17]. Wang C., Wang X., Hu G., Wang J., Li J., Influence of Al content on electrical and structural properties of Si-doped AlxGa1–xN/GaN HEMT structures, Phys. Stat. Sol. (C) 3 (3) (2006) 486–489.
[18]. Massabuau F. C. P., Rhode S. L., Horton M. K., Hanlon T. J. O., Kovacs A., Zielinski M. S., Kappers M. J., Borkowski R. E. D., Humphreys C. J., Oliver R. A., Dislocations in AlGaN: Core Structure, Atom Segregation, and Optical Properties, Nano Lett., 17 (2017) 4846−4852.
[19]. Lee, H. P., Perozek J., Rosario L. D., Bayram C., Investigation of AlGaN/GaN high electron mobility transistor structures on 200-mm silicon (111) substrates employing different buffer layer configurations, Sci. Rep. 6, (2016) 37588.

AlN/Al2O3 Şablonlar Üzerindeki Yüksek Al İçerikli AlGaN epi-Tabakaların Büyütme Sıcaklığı Bağımlılığı

Year 2018, Volume: 39 Issue: 3, 728 - 733, 30.09.2018

İlkay Demir

https://doi.org/10.17776/csj.453576

Cited By: 5

Abstract

Bu çalışmada, yüksek
Al içerikli AlGaN epi-tabakaların MOVPE (Metalorganik Buhar Fazı Epitaksi)
büyütmesi ve karakterizasyon çalışmaları rapor edilmiştir. AlGaN
epi-tabakaların kristal kalitesi ve yüzey morfolojisi analizi için yüksek
çözünürlüklü X-ışını kırınımı (HRXRD) ve atomik kuvvet mikroskobu teknikleri
kullanılmıştır. Büyütme sıcaklığının AlGaN epi-tabakalarının yapısal kalitesi
ve yüzey morfolojisi üzerindeki rolü incelenmiştir. Büyütme ve ölçüm sonuçları
AlN/Al₂O₃şablonu üzerine tek fazda AlGaN epi-tabakaların
büyütüldüğünü göstermektedir. Artan büyütme sıcaklığının AlGaN'in Al içeriğini
arttırdığı ve bunun AlGaN alaşım konsantrasyonunu kontrol etmeye olanak
sağladığı sonucuna varılmıştır. Ayrıca, AlGaN epi-tabakalarındaki Al içeriğinin
artışı pürüzsüz yüzeye yol açar ki bu
dislokasyon yoğunluğunun azaldığını belirtir.

Keywords

AlGaN, MOVPE, AlN, Al2O3, X-ışını kırınımı, Atomik kuvvet mikroskobu

References

[1]. Brunner F., Zettler J-T., Weyers M., Advanced in-situ control for III-nitride RF power device epitaxy, Semicond. Sci. Technol., 33 (2018) 045014.
[2]. Li K., Rakheja S., An analytic current-voltage model for quasi-ballistic III-nitride high electron mobility transistors, Journal of Applied Physics, 123 (2018) 184501.
[3]. Cordier Y., Comyn R., Frayssinet E., Khoury M., Lesecq M., Defrance N., De Jaeger J-C, Influence of AlN Growth Temperature on the Electrical Properties of Buffer Layers for GaN HEMTs on Silicon, Physica Status Solidi A, 215 (2018) 1700637.
[4]. Lee D., Lee J. W., Jang J., Shin I-S., Jin L., Park J. H., Kim J., Lee J., Noh H-S., Kim Y-I., Park Y., Lee G-D, Park Y., Kim J. K., Yoon E., Improved performance of AlGaN-based deep ultraviolet light-emitting diodes with nano-patterned AlN/sapphire substrates, Appl. Phys. Lett. 110 (2017), 191103.
[5]. Alias M. S., Tangi M., Holguin-Lerma J. A., Stegenburgs E., Alatawi A. A., Ashry I., Subedi R. C., Priante D., Shakfa M. K., Ng T. K., Ooi, B. S., Review of nanophotonics approaches using nanostructures and nanofabrication for III-nitrides ultraviolet-photonic devices, J. Nanophoton. 12 (4) (2018), 043508.
[6]. Wang W., Li Y., Zheng Y., Yang Z., Lin Z., Chen X., Lu Z., Li G., Performance-improved vertical GaN-based light-emitting diodes on Si substrates through designing the epitaxial structure CrystEngComm, 20 (2018) 4685-4693.
[7]. Laws E. A.,, Environmental Toxicology: Selected Entries from the Encyclopedia of Sustainability Science and Technology, Springer Science & Business Media, 2013.
[8]. Demir I., Robin Y., McClintock R., Elagoz S., Zekentes., Razeghi M., Direct growth of thick AlN layers on nanopatterned Si substrates by cantilever epitaxy, Phys. Status Solidi A 214 (4) (2017) 1600363.
[9]. Huang L., Li Y., Wang W., Li X., Zheng Y., Wang H., Zhang Z., Li G., Growth of high-quality AlN epitaxial film by optimizing the Si substrate surface, Applied Surface Science 435 (2018) 163–169.
[10]. Li Y., Wang W., Li X., Huang L., Zheng Y., Chen X., Li G., Nucleation layer design for growth of a high-quality AlN epitaxial film on a Si(111) substrate, CrystEngComm, 20 (2018) 1483-1490.
[11]. Tran B. T., Hirayama H., Growth and Fabrication of High External Quantum Efficiency AlGaN-Based Deep Ultraviolet Light-Emitting Diode Grown on Pattern Si Substrate, Scientific Reports 7 (2017) 12176.
[12]. Dai Q., Zhang X., Liang Z., Yang G., Wu Z., Chen S., Zhao J., Meng C., Wang J., Cui Y., Effects of indium surfactant on growth and characteristics of (1122) plane AlGaN-based multiple quantum wells, Optical Materials Express, 8 (2018) 24-29.
[13]. Yang W., Li J., Lin W., Li S., Chen H., Liu D., Yang X., Kang J., Control of two-dimensional growth of AlN and high Al-content AlGaN-based MQWs for deep-UV LEDs, AIP Advances 3 (2013), 052103.
[14]. Demir I., Li H., Robin Y., McClintock R., Elagoz S., Razeghi M., Sandwich method to grow high quality AlN by MOCVD, Journal of Physics D: Applied Physics 51 (8) (2018) 085104.
[15]. Shimanara Y., Miyake H., Hiramatsu K., Fukuyo F., Okada T., Takaoka H., Yoshida H., Growth of High-Quality Si-Doped AlGaN by Low-Pressure Metalorganic Vapor Phase Epitaxy, Japanese Journal of Applied Physics 50 (2011) 095502.
[16]. Funato M., Banal R. G. Kawakami Y., Screw dislocation-induced growth spirals as emissive exciton localization centers in Al-rich AlGaN/AlN quantum wells, AIP Advances 5 (2015) 117115.
[17]. Wang C., Wang X., Hu G., Wang J., Li J., Influence of Al content on electrical and structural properties of Si-doped AlxGa1–xN/GaN HEMT structures, Phys. Stat. Sol. (C) 3 (3) (2006) 486–489.
[18]. Massabuau F. C. P., Rhode S. L., Horton M. K., Hanlon T. J. O., Kovacs A., Zielinski M. S., Kappers M. J., Borkowski R. E. D., Humphreys C. J., Oliver R. A., Dislocations in AlGaN: Core Structure, Atom Segregation, and Optical Properties, Nano Lett., 17 (2017) 4846−4852.
[19]. Lee, H. P., Perozek J., Rosario L. D., Bayram C., Investigation of AlGaN/GaN high electron mobility transistor structures on 200-mm silicon (111) substrates employing different buffer layer configurations, Sci. Rep. 6, (2016) 37588.

There are 19 citations in total.

Details

Primary Language	English
Journal Section	Natural Sciences
Authors	İlkay Demir
Publication Date	September 30, 2018
Submission Date	August 14, 2018
Acceptance Date	September 4, 2018
Published in Issue	Year 2018Volume: 39 Issue: 3

Cite

APA	Demir, İ. (2018). Growth Temperature Dependency of High Al Content AlGaN Epilayers on AlN/Al2O3 Templates. Cumhuriyet Science Journal, 39(3), 728-733. https://doi.org/10.17776/csj.453576