Research Article

Growth Temperature Dependency of High Al Content AlGaN Epilayers on AlN/Al2O3 Templates

Volume: 39 Number: 3 September 30, 2018
EN TR

Growth Temperature Dependency of High Al Content AlGaN Epilayers on AlN/Al2O3 Templates

Abstract

In this work, MOVPE (Metalorganic Vapor Phase Epitaxy) growth and characterization studies of high Al content AlGaN epilayers are reported. We utilize high resolution X-ray diffraction (HRXRD) and atomic force microscope (AFM) techniques to analyze the crystalline quality and surface morphology of AlGaN epilayers. The role of the growth temperature of AlGaN epilayers on the structural quality and the surface morphology was investigated. Growth and measurement results show that single phase AlGaN epilayers were grown on AlN/Al2O3 template. It is concluded that the increasing growth temperature increases the Al content of AlGaN epilayers which enable to control the alloy concentration of AlGaN. Furthermore, the increasing Al content in AlGaN epilayers leads to the smooth surface which indicates that the decreasing number of dislocation density.

Keywords

References

  1. [1]. Brunner F., Zettler J-T., Weyers M., Advanced in-situ control for III-nitride RF power device epitaxy, Semicond. Sci. Technol., 33 (2018) 045014.
  2. [2]. Li K., Rakheja S., An analytic current-voltage model for quasi-ballistic III-nitride high electron mobility transistors, Journal of Applied Physics, 123 (2018) 184501.
  3. [3]. Cordier Y., Comyn R., Frayssinet E., Khoury M., Lesecq M., Defrance N., De Jaeger J-C, Influence of AlN Growth Temperature on the Electrical Properties of Buffer Layers for GaN HEMTs on Silicon, Physica Status Solidi A, 215 (2018) 1700637.
  4. [4]. Lee D., Lee J. W., Jang J., Shin I-S., Jin L., Park J. H., Kim J., Lee J., Noh H-S., Kim Y-I., Park Y., Lee G-D, Park Y., Kim J. K., Yoon E., Improved performance of AlGaN-based deep ultraviolet light-emitting diodes with nano-patterned AlN/sapphire substrates, Appl. Phys. Lett. 110 (2017), 191103.
  5. [5]. Alias M. S., Tangi M., Holguin-Lerma J. A., Stegenburgs E., Alatawi A. A., Ashry I., Subedi R. C., Priante D., Shakfa M. K., Ng T. K., Ooi, B. S., Review of nanophotonics approaches using nanostructures and nanofabrication for III-nitrides ultraviolet-photonic devices, J. Nanophoton. 12 (4) (2018), 043508.
  6. [6]. Wang W., Li Y., Zheng Y., Yang Z., Lin Z., Chen X., Lu Z., Li G., Performance-improved vertical GaN-based light-emitting diodes on Si substrates through designing the epitaxial structure CrystEngComm, 20 (2018) 4685-4693.
  7. [7]. Laws E. A.,, Environmental Toxicology: Selected Entries from the Encyclopedia of Sustainability Science and Technology, Springer Science & Business Media, 2013.
  8. [8]. Demir I., Robin Y., McClintock R., Elagoz S., Zekentes., Razeghi M., Direct growth of thick AlN layers on nanopatterned Si substrates by cantilever epitaxy, Phys. Status Solidi A 214 (4) (2017) 1600363.

Details

Primary Language

English

Subjects

-

Journal Section

Research Article

Authors

Publication Date

September 30, 2018

Submission Date

August 14, 2018

Acceptance Date

September 4, 2018

Published in Issue

Year 1970 Volume: 39 Number: 3

APA
Demir, İ. (2018). Growth Temperature Dependency of High Al Content AlGaN Epilayers on AlN/Al2O3 Templates. Cumhuriyet Science Journal, 39(3), 728-733. https://doi.org/10.17776/csj.453576

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